Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFR330BTM

IRFR330BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,660 -

RFQ

IRFR330BTM

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 4.5A (Tc) 10V 1Ohm @ 2.25A, 10V 4V @ 250µA 33 nC @ 10 V ±30V 1000 pF @ 25 V - 2.5W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS150A

IRFS150A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,177 -

RFQ

IRFS150A

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 31A (Tc) 10V 40mOhm @ 15.5A, 10V 4V @ 250µA 97 nC @ 10 V ±20V 2270 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFS510A

IRFS510A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,501 -

RFQ

IRFS510A

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 4.5A (Tc) 10V 400mOhm @ 2.25A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 240 pF @ 25 V - 21W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU214BTU

IRFU214BTU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,596 -

RFQ

IRFU214BTU

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 2.2A (Tc) 10V 2Ohm @ 1.1A, 10V 4V @ 250µA 10.5 nC @ 10 V ±30V 275 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFS740B

IRFS740B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,595 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
HUF75345S3ST_NL

HUF75345S3ST_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,309 -

RFQ

HUF75345S3ST_NL

Технические

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 275 nC @ 20 V ±20V 4000 pF @ 25 V - 325W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFW610BTM

IRFW610BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,858 -

RFQ

IRFW610BTM

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 10V 1.5Ohm @ 1.65A, 10V 4V @ 250µA 9.3 nC @ 10 V ±30V 225 pF @ 25 V - 3.13W (Ta), 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF75339G3_NL

HUF75339G3_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,092 -

RFQ

HUF75339G3_NL

Технические

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 12mOhm @ 75A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75545S3ST_NL

HUF75545S3ST_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,381 -

RFQ

HUF75545S3ST_NL

Технические

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 80 V 75A (Tc) 10V 10mOhm @ 75A, 10V 4V @ 250µA 235 nC @ 20 V ±20V 3750 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75332P3_NL

HUF75332P3_NL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,248 -

RFQ

HUF75332P3_NL

Технические

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 55 V 60A (Tc) 10V 19mOhm @ 60A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 145W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76129D3ST

HUF76129D3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,978 -

RFQ

HUF76129D3ST

Технические

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 16mOhm @ 20A, 10V 3V @ 250µA 46 nC @ 10 V ±20V 1425 pF @ 25 V - 105W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF75945P3

HUF75945P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,105 -

RFQ

HUF75945P3

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 38A (Tc) 10V 71mOhm @ 38A, 10V 4V @ 250µA 280 nC @ 20 V ±20V 4023 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF76145S3

HUF76145S3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,646 -

RFQ

HUF76145S3

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 4.5mOhm @ 75A, 10V 3V @ 250µA 156 nC @ 10 V ±20V 4900 pF @ 25 V - 270W (Tc) -40°C ~ 150°C (TJ) Through Hole
HUF76143S3

HUF76143S3

MOSFET N-CHANNEL 30V 75A

Fairchild Semiconductor
3,329 -

RFQ

HUF76143S3

Технические

Bulk - Active - - - - - - - - - - - - - -
SSP3N80A

SSP3N80A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,985 -

RFQ

SSP3N80A

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 4.8Ohm @ 850mA, 10V 3.5V @ 250µA 35 nC @ 10 V ±30V 750 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
SSR4N60BTM

SSR4N60BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,260 -

RFQ

SSR4N60BTM

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 2.8A (Tc) 10V 2.5Ohm @ 1.4A, 10V 4V @ 250µA 29 nC @ 10 V ±30V 920 pF @ 25 V - 2.5W (Ta), 49W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SSS4N60B

SSS4N60B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,890 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
SSP4N90A

SSP4N90A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,564 -

RFQ

SSP4N90A

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 900 V 4A (Tc) 10V 5Ohm @ 2A, 10V 3.5V @ 250µA 46 nC @ 10 V ±30V 950 pF @ 25 V - 120W (Tc) -55°C ~ 150°C (TJ) Through Hole
SSR2N60BTM

SSR2N60BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,297 -

RFQ

SSR2N60BTM

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 1.8A (Tc) 10V 5Ohm @ 900mA, 10V 4V @ 250µA 17 nC @ 10 V ±30V 490 pF @ 25 V - 2.5W (Ta), 44W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SFP9Z14

SFP9Z14

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,361 -

RFQ

SFP9Z14

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) 10V 500mOhm @ 3.4A, 10V 4V @ 250µA 11 nC @ 10 V ±30V 350 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) Through Hole
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