Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDS9412

FDS9412

MOSFET N-CH 30V 7.9A 8SOIC

Fairchild Semiconductor
116,238 -

RFQ

FDS9412

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.9A (Ta) 4.5V, 10V 22mOhm @ 7.9A, 10V 2V @ 250µA 22 nC @ 10 V ±20V 830 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDFMA2P853T

FDFMA2P853T

MOSFET P-CH 20V 3A MICROFET

Fairchild Semiconductor
32,850 -

RFQ

FDFMA2P853T

Технические

Bulk PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 1.8V, 4.5V 120mOhm @ 3A, 4.5V 1.3V @ 250µA 6 nC @ 4.5 V ±8V 435 pF @ 10 V Schottky Diode (Isolated) 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RFP8P10

RFP8P10

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
29,973 -

RFQ

RFP8P10

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 8A (Tc) 10V 400mOhm @ 8A, 10V 4V @ 250µA - ±20V 1500 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
SFR9120TM

SFR9120TM

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
27,709 -

RFQ

SFR9120TM

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 4.9A (Tc) 10V 600mOhm @ 2.5A, 10V 4V @ 250µA 20 nC @ 10 V ±30V 550 pF @ 25 V - 2.5W (Ta), 32W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS830B

IRFS830B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
20,242 -

RFQ

IRFS830B

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tj) 10V 1.5Ohm @ 2.25A, 10V 4V @ 250µA 35 nC @ 10 V ±30V 1050 pF @ 25 V - 38W (Tj) -55°C ~ 150°C (TJ) Through Hole
FDFMA2P859T

FDFMA2P859T

MOSFET P-CH 20V 3A MICROFET

Fairchild Semiconductor
14,392 -

RFQ

FDFMA2P859T

Технические

Bulk PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 1.8V, 4.5V 120mOhm @ 3A, 4.5V 1.3V @ 250µA 6 nC @ 4.5 V ±8V 435 pF @ 10 V Schottky Diode (Isolated) 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDD6780

FDD6780

MOSFET N-CH 25V 16.5A/30A DPAK

Fairchild Semiconductor
12,410 -

RFQ

FDD6780

Технические

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 16.5A (Ta), 30A (Tc) 4.5V, 10V 8.5mOhm @ 16.5A, 10V 3V @ 250µA 29 nC @ 10 V ±20V 1590 pF @ 13 V - 3.7W (Ta), 32.6W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF76009D3ST

HUF76009D3ST

MOSFET N-CH 20V 20A TO252AA

Fairchild Semiconductor
12,359 -

RFQ

HUF76009D3ST

Технические

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 20 V 20A (Tc) 5V, 10V 27mOhm @ 20A, 10V 3V @ 250µA 13 nC @ 10 V ±20V 470 pF @ 20 V - 41W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDMB668P

FDMB668P

MOSFET P-CH 20V 6.1A 8MLP

Fairchild Semiconductor
10,643 -

RFQ

FDMB668P

Технические

Bulk PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 6.1A (Ta) 1.8V, 4.5V 35mOhm @ 6.1A, 4.5V 1V @ 250µA 59 nC @ 10 V ±8V 2085 pF @ 10 V - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4835DY

SI4835DY

P-CHANNEL MOSFET

Fairchild Semiconductor
4,388 -

RFQ

SI4835DY

Технические

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 8.8A (Ta) 4.5V, 10V 20mOhm @ 8.8A, 10V 3V @ 250µA 27 nC @ 10 V ±25V 1680 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDG315N

FDG315N

2A, 30V, N-CHANNEL, MOSFET

Fairchild Semiconductor
20,245 -

RFQ

FDG315N

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4.5V, 10V 120mOhm @ 2A, 10V 3V @ 250µA 4 nC @ 5 V ±20V 220 pF @ 15 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDFS2P753Z

FDFS2P753Z

MOSFET P-CH 30V 3A 8SOIC

Fairchild Semiconductor
425,327 -

RFQ

FDFS2P753Z

Технические

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 3A (Ta) - 115mOhm @ 3A, 10V 3V @ 250µA 9.3 nC @ 10 V ±25V 455 pF @ 10 V Schottky Diode (Isolated) 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ISL9N312AD3

ISL9N312AD3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
211,233 -

RFQ

ISL9N312AD3

Технические

Bulk UltraFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 12mOhm @ 50A, 10V 3V @ 250µA 38 nC @ 10 V ±20V 1450 pF @ 15 V - 75W (Ta) -55°C ~ 175°C (TJ) Through Hole
FDZ202P

FDZ202P

MOSFET P-CH 20V 5.5A 12BGA

Fairchild Semiconductor
155,615 -

RFQ

FDZ202P

Технические

Bulk PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.5A (Ta) 2.5V, 4.5V 45mOhm @ 5.5A, 4.5V 1.5V @ 250µA 13 nC @ 4.5 V ±12V 884 pF @ 10 V - 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ISL9N312AD3ST

ISL9N312AD3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
138,810 -

RFQ

ISL9N312AD3ST

Технические

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 12mOhm @ 50A, 10V 3V @ 250µA 38 nC @ 10 V ±20V 1450 pF @ 15 V - 75W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDZ493P

FDZ493P

MOSFET P-CH 20V 4.6A 9BGA

Fairchild Semiconductor
47,700 -

RFQ

FDZ493P

Технические

Bulk PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.6A (Ta) 2.5V, 4.5V 46mOhm @ 4.6A, 4.5V 1.5V @ 250µA 11 nC @ 4.5 V ±12V 754 pF @ 10 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDFME2P823ZT

FDFME2P823ZT

2.6A, 20V, P-CHANNEL MOSFET

Fairchild Semiconductor
40,000 -

RFQ

FDFME2P823ZT

Технические

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 2.6A (Ta) 1.8V, 4.5V 142mOhm @ 2.3A, 4.5V 1V @ 250µA 7.7 nC @ 4.5 V ±8V 405 pF @ 10 V Schottky Diode (Isolated) 1.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS730B

IRFS730B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
23,487 -

RFQ

IRFS730B

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tj) 10V 1Ohm @ 2.75A, 10V 4V @ 250µA 33 nC @ 10 V ±30V 1000 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMC4436BZ

FDMC4436BZ

POWER FIELD-EFFECT TRANSISTOR

Fairchild Semiconductor
23,228 -

RFQ

FDMC4436BZ

Технические

Bulk - Obsolete - - - - - - - - - - - - - -
FQPF4N20

FQPF4N20

MOSFET N-CH 200V 2.8A TO220F

Fairchild Semiconductor
15,902 -

RFQ

FQPF4N20

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 2.8A (Tc) 10V 1.4Ohm @ 1.4A, 10V 5V @ 250µA 6.5 nC @ 10 V ±30V 220 pF @ 25 V - 27W (Tc) -55°C ~ 150°C (TJ) Through Hole
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