Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
HUF75842P3

HUF75842P3

MOSFET N-CH 150V 43A TO220-3

Fairchild Semiconductor
4,636 -

RFQ

HUF75842P3

Технические

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 43A, 10V 4V @ 250µA 175 nC @ 20 V ±20V 2730 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUFA75645S3S

HUFA75645S3S

MOSFET N-CH 100V 75A D2PAK

Fairchild Semiconductor
1,729 -

RFQ

HUFA75645S3S

Технические

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 14mOhm @ 75A, 10V 4V @ 250µA 238 nC @ 20 V ±20V 3790 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS8350L

FDMS8350L

FDMS8350L - N-CHANNEL POWERTRENC

Fairchild Semiconductor
2,360 -

RFQ

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 47A (Ta), 290A (Tc) 4.5V, 10V 0.85mOhm @ 47A, 10V 3V @ 250µA 242 nC @ 10 V ±20V 17500 pF @ 20 V - 2.7W (Ta), 113W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCP170N60

FCP170N60

MOSFET N-CH 600V 22A TO220-3

Fairchild Semiconductor
1,381 -

RFQ

FCP170N60

Технические

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 170mOhm @ 11A, 10V 3.5V @ 250µA 55 nC @ 10 V ±20V 2860 pF @ 380 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS86540

FDS86540

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
3,506 -

RFQ

FDS86540

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Ta) 8V, 10V 4.5mOhm @ 18A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 6410 pF @ 30 V - 2.5W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDB024N04AL7

FDB024N04AL7

MOSFET N-CH 40V 100A TO263-7

Fairchild Semiconductor
30,608 -

RFQ

FDB024N04AL7

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 2.4mOhm @ 80A, 10V 3V @ 250µA 109 nC @ 10 V ±20V 7300 pF @ 25 V - 214W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDI038AN06A0

FDI038AN06A0

MOSFET N-CH 60V 17A/80A I2PAK

Fairchild Semiconductor
1,809 -

RFQ

FDI038AN06A0

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 80A (Tc) 6V, 10V 3.8mOhm @ 80A, 10V 4V @ 250µA 124 nC @ 10 V ±20V 6400 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQA19N60

FQA19N60

MOSFET N-CH 600V 18.5A TO3PN

Fairchild Semiconductor
6,271 -

RFQ

FQA19N60

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 18.5A (Tc) 10V 380mOhm @ 9.3A, 10V 5V @ 250µA 90 nC @ 10 V ±30V 3600 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCH35N60

FCH35N60

MOSFET N-CH 600V 35A TO247-3

Fairchild Semiconductor
2,501 -

RFQ

FCH35N60

Технические

Bulk SuperMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 35A (Tc) 10V 98mOhm @ 17.5A, 10V 5V @ 250µA 181 nC @ 10 V ±30V 6640 pF @ 25 V - 312.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCH170N60

FCH170N60

MOSFET N-CH 600V 22A TO247-3

Fairchild Semiconductor
480 -

RFQ

FCH170N60

Технические

Bulk SuperFET® II Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 170mOhm @ 11A, 10V 3.5V @ 250µA 55 nC @ 10 V ±20V 2860 pF @ 380 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB029N06

FDB029N06

MOSFET N-CH 60V 120A D2PAK

Fairchild Semiconductor
5,992 -

RFQ

FDB029N06

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 3.1mOhm @ 75A, 10V 4.5V @ 250µA 151 nC @ 10 V ±20V 9815 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDBL0150N60

FDBL0150N60

FDBL0150N60 - N-CHANNEL POWERTRE

Fairchild Semiconductor
2,500 -

RFQ

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 240A (Tc) 10V 1.5mOhm @ 80A, 10V 4V @ 250µA 169 nC @ 10 V ±20V 10300 pF @ 30 V - 357W (Tj) -55°C ~ 175°C (TJ) Surface Mount
FDP8030L

FDP8030L

MOSFET N-CH 30V 80A TO220-3

Fairchild Semiconductor
7,127 -

RFQ

FDP8030L

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Ta) 4.5V, 10V 3.5mOhm @ 80A, 10V 2V @ 250µA 170 nC @ 5 V ±20V 10500 pF @ 15 V - 187W (Tc) -65°C ~ 175°C (TJ) Through Hole
FCPF36N60NT

FCPF36N60NT

MOSFET N-CH 600V 36A TO220F

Fairchild Semiconductor
2,467 -

RFQ

FCPF36N60NT

Технические

Bulk SupreMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 36A (Tc) 10V 90mOhm @ 18A, 10V 4V @ 250µA 112 nC @ 10 V ±30V 4785 pF @ 100 V - - -55°C ~ 150°C (TJ) Through Hole
FDH038AN08A1

FDH038AN08A1

MOSFET N-CH 75V 22A/80A TO247-3

Fairchild Semiconductor
6,254 -

RFQ

FDH038AN08A1

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 75 V 22A (Ta), 80A (Tc) 6V, 10V 3.8mOhm @ 80A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 8665 pF @ 25 V - 450W (Tc) -55°C ~ 175°C (TJ) Through Hole
FCH077N65F-F085

FCH077N65F-F085

MOSFET N-CH 650V 54A TO247-3

Fairchild Semiconductor
148 -

RFQ

FCH077N65F-F085

Технические

Bulk Automotive, AEC-Q101, SuperFET® II Active N-Channel MOSFET (Metal Oxide) 650 V 54A (Tc) 10V 77mOhm @ 27A, 10V 5V @ 250µA 164 nC @ 10 V ±20V 7162 pF @ 25 V - 481W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75852G3

HUF75852G3

MOSFET N-CH 150V 75A TO247-3

Fairchild Semiconductor
2,726 -

RFQ

HUF75852G3

Технические

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 150 V 75A (Tc) 10V 16mOhm @ 75A, 10V 4V @ 250µA 480 nC @ 20 V ±20V 7690 pF @ 25 V - 500W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP032N08B-F102

FDP032N08B-F102

MOSFET N-CH 80V 120A TO220-3

Fairchild Semiconductor
3,599 -

RFQ

FDP032N08B-F102

Технические

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 10V 3.3mOhm @ 100A, 10V 4.5V @ 250µA 144 nC @ 10 V ±20V 10965 pF @ 40 V - 263W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP047N08-F102

FDP047N08-F102

MOSFET N-CH 75V 164A TO220-3

Fairchild Semiconductor
3,390 -

RFQ

FDP047N08-F102

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 75 V 164A (Tc) 10V 4.7Ohm @ 80A, 10V 4.5V @ 250µA 152 nC @ 10 V ±20V 9415 pF @ 25 V - 268W (Tc) -55°C ~ 175°C (TJ) Through Hole
BSS138L

BSS138L

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor
2,088 -

RFQ

BSS138L

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 200mA (Ta) 2.75V, 5V 3.5Ohm @ 200mA, 5V 1.5V @ 1mA 2.4 nC @ 10 V ±20V 50 pF @ 25 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
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