| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRF2807ZSTRRPBFMOSFET N-CH 75V 75A D2PAK Infineon Technologies |
2,275 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 75 V | 75A (Tc) | 10V | 9.4mOhm @ 53A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 3270 pF @ 25 V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRL3303STRRPBFMOSFET N-CH 30V 38A D2PAK Infineon Technologies |
2,927 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 38A (Tc) | 4.5V, 10V | 26mOhm @ 20A, 10V | 1V @ 250µA | 26 nC @ 4.5 V | ±16V | 870 pF @ 25 V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRFS17N20DTRRPMOSFET N-CH 200V 16A D2PAK Infineon Technologies |
3,808 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 16A (Tc) | 10V | 170mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50 nC @ 10 V | ±30V | 1100 pF @ 25 V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRF3315STRRPBFMOSFET N-CH 150V 21A D2PAK Infineon Technologies |
2,259 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 21A (Tc) | 10V | 82mOhm @ 12A, 10V | 4V @ 250µA | 95 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 3.8W (Ta), 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRF6655TR1PBFMOSFET N-CH 100V 4.2A DIRECTFET Infineon Technologies |
3,872 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.2A (Ta), 19A (Tc) | 10V | 62mOhm @ 5A, 10V | 4.8V @ 25µA | 11.7 nC @ 10 V | ±20V | 530 pF @ 25 V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
|
IRFS23N20DTRRPMOSFET N-CH 200V 24A D2PAK Infineon Technologies |
2,585 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Discontinued at Mosen | N-Channel | MOSFET (Metal Oxide) | 200 V | 24A (Tc) | 10V | 100mOhm @ 14A, 10V | 5.5V @ 250µA | 86 nC @ 10 V | ±30V | 1960 pF @ 25 V | - | 3.8W (Ta), 170W (Tc) | - | Surface Mount |
|
BSC016N03MSGATMA1MOSFET N-CH 30V 28A/100A TDSON Infineon Technologies |
15,000 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 28A (Ta), 100A (Tc) | 4.5V, 10V | 1.6mOhm @ 30A, 10V | 2V @ 250µA | 173 nC @ 10 V | ±20V | 13000 pF @ 15 V | - | 2.5W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPS60R600PFD7SAKMA1MOSFET N-CH 650V 6A TO251-3 Infineon Technologies |
2,626 | - |
RFQ |
Tube | CoolMOS™PFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4.5V @ 80µA | 8.5 nC @ 10 V | ±20V | 344 pF @ 400 V | - | 31W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | |
|
R6009JND3TL1MOSFET N-CH 600V 9A TO252 Rohm Semiconductor |
3,349 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 9A (Tc) | 15V | 585mOhm @ 4.5A, 15V | 7V @ 1.38mA | 22 nC @ 15 V | ±30V | 645 pF @ 100 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSC16DN25NS3GATMA1MOSFET N-CH 250V 10.9A TDSON-8-5 Infineon Technologies |
3,521 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 10.9A (Tc) | 10V | 165mOhm @ 5.5A, 10V | 4V @ 32µA | 11.4 nC @ 10 V | ±20V | 920 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
CSD18510Q5BMOSFET N-CH 40V 300A 8VSON Texas Instruments |
3,558 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT),Bulk | NexFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 300A (Tc) | 4.5V, 10V | 0.96mOhm @ 32A, 10V | 2.3V @ 250µA | 153 nC @ 10 V | ±20V | 11400 pF @ 20 V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPA70R900P7SXKSA1MOSFET N-CH 700V 6A TO220 Infineon Technologies |
3,226 | - |
RFQ |
Технические |
Bulk,Tube | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 6A (Tc) | 10V | 900mOhm @ 1.1A, 10V | 3.5V @ 60µA | 6.8 nC @ 400 V | ±16V | 211 pF @ 400 V | - | 20.5W (Tc) | -40°C ~ 150°C (TJ) | Through Hole |
|
CSD16556Q5BMOSFET N-CH 25V 100A 8VSON Texas Instruments |
3,457 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT),Bulk | NexFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 100A (Tc) | 4.5V, 10V | 1.07mOhm @ 30A, 10V | 1.7V @ 250µA | 47 nC @ 4.5 V | ±20V | 6180 pF @ 15 V | - | 3.2W (Ta), 191W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IPLK60R360PFD7ATMA1MOSFET N-CH 600V 13A THIN-PAK Infineon Technologies |
3,607 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ PFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 13A (Tc) | 10V | 360mOhm @ 2.9A, 10V | 4.5V @ 140µA | 12.7 nC @ 10 V | ±20V | 534 pF @ 400 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FDMC86160ET100MOSFET N-CH 100V 9A/43A POWER33 onsemi |
3,665 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9A (Ta), 43A (Tc) | 6V, 10V | 14mOhm @ 9A, 10V | 4V @ 250µA | 22 nC @ 10 V | ±20V | 1290 pF @ 50 V | - | 2.8W (Ta), 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
TN2425N8-GMOSFET N-CH 250V 480MA SOT89-3 Microchip Technology |
1,290 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 480mA (Tj) | 3V, 10V | 3.5Ohm @ 500mA, 10V | 2.5V @ 1mA | - | ±20V | 200 pF @ 25 V | - | 1.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRF3710ZSTRRPBFMOSFET N-CH 100V 59A D2PAK Infineon Technologies |
3,306 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 59A (Tc) | 10V | 18mOhm @ 35A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRFS4610TRRPBFMOSFET N-CH 100V 73A D2PAK Infineon Technologies |
2,778 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 73A (Tc) | 10V | 14mOhm @ 44A, 10V | 4V @ 100µA | 140 nC @ 10 V | ±20V | 3550 pF @ 50 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRL7833STRRPBFMOSFET N-CH 30V 150A D2PAK Infineon Technologies |
3,970 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 150A (Tc) | 4.5V, 10V | 3.8mOhm @ 38A, 10V | 2.3V @ 250µA | 47 nC @ 4.5 V | ±20V | 4170 pF @ 15 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IRL2505STRRPBFMOSFET N-CH 55V 104A D2PAK Infineon Technologies |
3,516 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 104A (Tc) | 4V, 10V | 8mOhm @ 54A, 10V | 2V @ 250µA | 130 nC @ 5 V | ±16V | 5000 pF @ 25 V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |