Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDI8442

FDI8442

MOSFET N-CH 40V 23A/80A I2PAK

Fairchild Semiconductor
6,546 -

RFQ

FDI8442

Технические

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 23A (Ta), 80A (Tc) 10V 2.9mOhm @ 80A, 10V 4V @ 250µA 235 nC @ 10 V ±20V 12200 pF @ 25 V - 254W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75639S3

HUF75639S3

MOSFET N-CH 100V 56A I2PAK

Harris Corporation
5,937 -

RFQ

HUF75639S3

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 25mOhm @ 56A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP5690

FDP5690

MOSFET N-CH 60V 32A TO220-3

Fairchild Semiconductor
5,075 -

RFQ

FDP5690

Технические

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 32A (Tc) 6V, 10V 27mOhm @ 16A, 10V 4V @ 250µA 33 nC @ 10 V ±20V 1120 pF @ 25 V - 58W (Tc) -65°C ~ 175°C (TJ) Through Hole
FQPF18N50V2SDTU

FQPF18N50V2SDTU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
4,950 -

RFQ

FQPF18N50V2SDTU

Технические

Bulk QFET® Active N-Channel MOSFET (Metal Oxide) 500 V 18A (Tj) 10V 265mOhm @ 9A, 10V 5V @ 250µA 55 nC @ 10 V ±30V 3290 pF @ 25 V - 69W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK2329L-E

2SK2329L-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
4,294 -

RFQ

2SK2329L-E

Технические

Bulk * Active - - - - - - - - - - - - - -
NTB12N50T4

NTB12N50T4

N-CHANNEL POWER MOSFET

onsemi
3,989 -

RFQ

NTB12N50T4

Технические

Bulk * Active - - - - - - - - - - - - - -
FQI47P06TU

FQI47P06TU

MOSFET P-CH 60V 47A I2PAK

Fairchild Semiconductor
3,979 -

RFQ

FQI47P06TU

Технические

Tube QFET® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 47A (Tc) 10V 26mOhm @ 23.5A, 10V 4V @ 250µA 110 nC @ 10 V ±25V 3600 pF @ 25 V - 3.75W (Ta), 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDW264P

FDW264P

MOSFET P-CH 20V 9.7A 8TSSOP

Fairchild Semiconductor
1,494 -

RFQ

FDW264P

Технические

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 9.7A (Ta) 2.5V, 4.5V 10mOhm @ 9.7A, 4.5V 1.5V @ 250µA 135 nC @ 5 V ±12V 7225 pF @ 10 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP040N06NF2SAKMA1

IPP040N06NF2SAKMA1

MOSFET N-CH

Infineon Technologies
961 -

RFQ

IPP040N06NF2SAKMA1

Технические

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 6V, 10V 4mOhm @ 80A, 10V 3.3V @ 50µA 44 nC @ 10 V ±20V 3375 pF @ 30 V - 3W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQB46N15TM

FQB46N15TM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
570 -

RFQ

FQB46N15TM

Технические

Bulk QFET™ Active N-Channel MOSFET (Metal Oxide) 150 V 45.6A (Tc) 10V 42mOhm @ 22.8A, 10V 4V @ 250µA 110 nC @ 10 V ±25V 3250 pF @ 25 V - 3.75W (Ta), 210W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA4N65X2

IXTA4N65X2

MOSFET N-CH 650V 4A TO263

IXYS
3,744 -

RFQ

IXTA4N65X2

Технические

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 850mOhm @ 2A, 10V 5V @ 250µA 8.3 nC @ 10 V ±30V 455 pF @ 25 V - 80W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPW65R280C6

IPW65R280C6

650 V COOLMOS E6 POWER MOSFET

Infineon Technologies
950 -

RFQ

IPW65R280C6

Технические

Bulk * Active - - - - - - - - - - - - - -
STFW2N105K5

STFW2N105K5

MOSFET N-CH 1050V 2A ISOWATT

STMicroelectronics
775 -

RFQ

STFW2N105K5

Технические

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 1050 V 2A (Tc) 10V 8Ohm @ 750mA, 10V 5V @ 100µA 10 nC @ 10 V 30V 115 pF @ 100 V - 30W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9632

IRF9632

P-CHANNEL POWER MOSFET

Harris Corporation
455 -

RFQ

IRF9632

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 10V 1.2Ohm @ 3.5A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 550 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDP8D5N10C

FDP8D5N10C

MOSFET N-CH 100V 76A TO220-3

onsemi
146 -

RFQ

FDP8D5N10C

Технические

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 76A (Tc) 10V 8.5mOhm @ 76A, 10V 4V @ 130µA 34 nC @ 10 V ±20V 2475 pF @ 50 V - 2.4W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP245

IRFP245

N-CHANNEL POWER MOSFET

Harris Corporation
400 -

RFQ

IRFP245

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 340mOhm @ 10A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTP8N65X2M

IXTP8N65X2M

MOSFET N-CH 650V 4A TO220

IXYS
3,844 -

RFQ

IXTP8N65X2M

Технические

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 4A (Tc) 10V 550mOhm @ 4A, 10V 5V @ 250µA 12 nC @ 10 V ±30V 800 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLZ44PBF-BE3

IRLZ44PBF-BE3

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix
796 -

RFQ

IRLZ44PBF-BE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 28mOhm @ 31A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 3300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQI7N80TU

FQI7N80TU

MOSFET N-CH 800V 6.6A I2PAK

onsemi
970 -

RFQ

FQI7N80TU

Технические

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 800 V 6.6A (Tc) 10V 1.5Ohm @ 3.3A, 10V 5V @ 250µA 52 nC @ 10 V ±30V 1850 pF @ 25 V - 3.13W (Ta), 167W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQB7N65CTM

FQB7N65CTM

MOSFET N-CH 650V 7A D2PAK

Fairchild Semiconductor
7,686 -

RFQ

FQB7N65CTM

Технические

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7A (Tc) 10V 1.4Ohm @ 3.5A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1245 pF @ 25 V - 173W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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