Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
APTM120SK68T1G

APTM120SK68T1G

MOSFET N-CH 1200V 15A SP1

Microsemi Corporation
3,541 -

RFQ

APTM120SK68T1G

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 15A (Tc) 10V 816mOhm @ 12A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 6696 pF @ 25 V - 357W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM120U10DAG

APTM120U10DAG

MOSFET N-CH 1200V 160A SP6

Microsemi Corporation
3,531 -

RFQ

APTM120U10DAG

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 160A (Tc) 10V 120mOhm @ 58A, 10V 5V @ 20mA 1100 nC @ 10 V ±30V 28900 pF @ 25 V - 3290W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM120UM95FAG

APTM120UM95FAG

MOSFET N-CH 1200V 103A SP6

Microsemi Corporation
3,032 -

RFQ

APTM120UM95FAG

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 103A (Tc) 10V 114mOhm @ 51.5A, 10V 5V @ 15mA 1122 nC @ 10 V ±30V 30900 pF @ 25 V - 2272W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM20DAM10TG

APTM20DAM10TG

MOSFET N-CH 200V 175A SP4

Microsemi Corporation
2,567 -

RFQ

APTM20DAM10TG

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 175A (Tc) 10V 12mOhm @ 87.5A, 10V 5V @ 5mA 224 nC @ 10 V ±30V 13700 pF @ 25 V - 694W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM20SKM05G

APTM20SKM05G

MOSFET N-CH 200V 317A SP6

Microsemi Corporation
3,737 -

RFQ

APTM20SKM05G

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 317A (Tc) 10V 6mOhm @ 158.5A, 10V 5V @ 10mA 448 nC @ 10 V ±30V 27400 pF @ 25 V - 1136W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM20SKM10TG

APTM20SKM10TG

MOSFET N-CH 200V 175A SP4

Microsemi Corporation
2,987 -

RFQ

APTM20SKM10TG

Технические

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 175A (Tc) 10V 12mOhm @ 87.5A, 10V 5V @ 5mA 224 nC @ 10 V ±30V 13700 pF @ 25 V - 694W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM20UM05SG

APTM20UM05SG

MOSFET N-CH 200V 317A MODULE

Microsemi Corporation
3,724 -

RFQ

APTM20UM05SG

Технические

Bulk - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 317A (Tc) 10V 5mOhm @ 158.5A, 10V 5V @ 10mA 448 nC @ 10 V ±30V 27400 pF @ 25 V - 1136W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
APTM20UM09SG

APTM20UM09SG

MOSFET N-CH 200V 195A MODULE

Microsemi Corporation
3,658 -

RFQ

APTM20UM09SG

Технические

Bulk - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 195A (Tc) 10V 9mOhm @ 74.5A, 10V 5V @ 4mA 217 nC @ 10 V ±30V 12300 pF @ 25 V - 780W (Tc) -40°C ~ 150°C (TJ) Chassis Mount
SUM90142E-GE3

SUM90142E-GE3

MOSFET N-CH 200V 90A TO263

Vishay Siliconix
3,018 -

RFQ

SUM90142E-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 200 V 90A (Tc) 7.5V, 10V 15mOhm @ 30A, 10V 4V @ 250µA 87 nC @ 10 V ±20V 3120 pF @ 100 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTB6410ANT4G

NTB6410ANT4G

MOSFET N-CH 100V 76A D2PAK

onsemi
2,232 -

RFQ

NTB6410ANT4G

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 76A (Tc) 10V 13mOhm @ 76A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 4500 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS8050ET30

FDMS8050ET30

MOSFET N-CH 30V 55A/423A POWER56

onsemi
2,103 -

RFQ

FDMS8050ET30

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 55A (Ta), 423A (Tc) 4.5V, 10V 0.65mOhm @ 55A, 10V 3V @ 750µA 285 nC @ 10 V ±20V 22610 pF @ 15 V - 3.3W (Ta), 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN2R7-30PL,127

PSMN2R7-30PL,127

MOSFET N-CH 30V 100A TO220AB

Nexperia USA Inc.
2,773 -

RFQ

PSMN2R7-30PL,127

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 2.7mOhm @ 15A, 10V 2.15V @ 1mA 66 nC @ 10 V ±20V 3954 pF @ 12 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP04N80C3XKSA1

SPP04N80C3XKSA1

MOSFET N-CH 800V 4A TO220-3

Infineon Technologies
3,822 -

RFQ

SPP04N80C3XKSA1

Технические

Bulk,Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.3Ohm @ 2.5A, 10V 3.9V @ 240µA 31 nC @ 10 V ±20V 570 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF3NK80Z

STF3NK80Z

MOSFET N-CH 800V 2.5A TO220FP

STMicroelectronics
2,802 -

RFQ

STF3NK80Z

Технические

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 800 V 2.5A (Tc) 10V 4.5Ohm @ 1.25A, 10V 4.5V @ 50µA 19 nC @ 10 V ±30V 485 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
STB20N65M5

STB20N65M5

MOSFET N-CH 650V 18A D2PAK

STMicroelectronics
865 -

RFQ

STB20N65M5

Технические

Tape & Reel (TR),Cut Tape (CT) MDmesh™ V Active N-Channel MOSFET (Metal Oxide) 650 V 18A (Tc) 10V 190mOhm @ 9A, 10V 5V @ 250µA 36 nC @ 10 V ±25V 1434 pF @ 100 V - 130W (Tc) 150°C (TJ) Surface Mount
SUP70060E-GE3

SUP70060E-GE3

MOSFET N-CH 100V 131A TO220AB

Vishay Siliconix
2,543 -

RFQ

SUP70060E-GE3

Технические

Bulk ThunderFET® Active N-Channel MOSFET (Metal Oxide) 100 V 131A (Tc) 7.5V, 10V 5.8mOhm @ 30A, 10V 4V @ 250µA 81 nC @ 10 V ±20V 3330 pF @ 50 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA80R750P7XKSA1

IPA80R750P7XKSA1

MOSFET N-CHANNEL 800V 7A TO220

Infineon Technologies
2,311 -

RFQ

IPA80R750P7XKSA1

Технические

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 800 V 7A (Tc) 10V 750mOhm @ 2.7A, 10V 3.5V @ 140µA 17 nC @ 10 V ±20V 460 pF @ 500 V - 27W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP3NK90Z

STP3NK90Z

MOSFET N-CH 900V 3A TO220AB

STMicroelectronics
3,924 -

RFQ

STP3NK90Z

Технические

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 900 V 3A (Tc) 10V 4.8Ohm @ 1.5A, 10V 4.5V @ 50µA 22.7 nC @ 10 V ±30V 590 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP083N10N5AKSA1

IPP083N10N5AKSA1

MOSFET N-CH 100V 73A TO220-3

Infineon Technologies
2,685 -

RFQ

IPP083N10N5AKSA1

Технические

Bulk,Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 6V, 10V 8.3mOhm @ 73A, 10V 3.8V @ 49µA 37 nC @ 10 V ±20V 2730 pF @ 50 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB65R190C7ATMA2

IPB65R190C7ATMA2

MOSFET N-CH 650V 13A TO263-3

Infineon Technologies
3,656 -

RFQ

IPB65R190C7ATMA2

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ C7 Active N-Channel MOSFET (Metal Oxide) 650 V 13A (Tc) 10V 190mOhm @ 5.7A, 10V 4V @ 290µA 23 nC @ 10 V ±20V 1150 pF @ 400 V - 72W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
Нахождение Чипа

Главная

Нахождение Чипа

Продукт

Нахождение Чипа

Телефон

Нахождение Чипа

Пользователь