Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDS6680S

FDS6680S

MOSFET N-CH 30V 11.5A 8SOIC

onsemi
2,862 -

RFQ

FDS6680S

Технические

Tape & Reel (TR) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.5A (Ta) 4.5V, 10V 11mOhm @ 11.5A, 10V 3V @ 250µA 24 nC @ 5 V ±20V 2010 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFI840GPBF

IRFI840GPBF

MOSFET N-CH 500V 4.6A TO220-3

Vishay Siliconix
2,892 -

RFQ

IRFI840GPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 4.6A (Tc) 10V 850mOhm @ 2.8A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1300 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS6694

FDS6694

MOSFET N-CH 30V 12A 8SOIC

onsemi
2,711 -

RFQ

FDS6694

Технические

Tape & Reel (TR) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 10V 11mOhm @ 12A, 10V 3V @ 250µA 19 nC @ 5 V ±20V 1293 pF @ 15 V - 2.5W (Ta) -55°C ~ 175°C (TJ) Surface Mount
FDP5800

FDP5800

MOSFET N-CH 60V 14A/80A TO220-3

onsemi
3,939 -

RFQ

FDP5800

Технические

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Ta), 80A (Tc) 4.5V, 10V 6mOhm @ 80A, 10V 2.5V @ 250µA 145 nC @ 10 V ±20V 9160 pF @ 15 V - 242W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDS7788

FDS7788

MOSFET N-CH 30V 18A 8SOIC

onsemi
2,967 -

RFQ

FDS7788

Технические

Tape & Reel (TR) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) 4.5V, 10V 4mOhm @ 18A, 10V 3V @ 250µA 48 nC @ 5 V ±20V 3845 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7739L1TRPBF

IRF7739L1TRPBF

MOSFET N-CH 40V 46A DIRECTFET

Infineon Technologies
3,016 -

RFQ

IRF7739L1TRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 46A (Ta), 270A (Tc) 10V 1mOhm @ 160A, 10V 4V @ 250µA 330 nC @ 10 V ±20V 11880 pF @ 25 V - 3.8W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7749L1TRPBF

IRF7749L1TRPBF

MOSFET N-CH 60V 33A DIRECTFET

Infineon Technologies
3,266 -

RFQ

IRF7749L1TRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 33A (Ta), 200A (Tc) 10V 1.5mOhm @ 120A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 12320 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQA6N90C-F109

FQA6N90C-F109

MOSFET N-CH 900V 6A TO3PN

onsemi
3,281 -

RFQ

FQA6N90C-F109

Технические

Bulk,Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 900 V 6A (Tc) 10V 2.3Ohm @ 3A, 10V 5V @ 250µA 40 nC @ 10 V ±30V 1770 pF @ 25 V - 198W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB60R099P7ATMA1

IPB60R099P7ATMA1

MOSFET N-CH 650V 31A D2PAK

Infineon Technologies
2,606 -

RFQ

IPB60R099P7ATMA1

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 31A (Tc) 10V 99mOhm @ 10.5A, 10V 4V @ 530µA 45 nC @ 10 V ±20V 1952 pF @ 400 V - 117W (Tc) -55°C ~ 150°C (TJ) Surface Mount
R6011ENX

R6011ENX

MOSFET N-CH 600V 11A TO220FM

Rohm Semiconductor
3,187 -

RFQ

R6011ENX

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 390mOhm @ 3.8A, 10V 4V @ 1mA 32 nC @ 10 V ±20V 670 pF @ 25 V - 40W (Tc) 150°C (TJ) Through Hole
STF7N105K5

STF7N105K5

MOSFET N-CH 1050V 4A TO220FP

STMicroelectronics
2,116 -

RFQ

STF7N105K5

Технические

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 1050 V 4A (Tc) 10V 2Ohm @ 2A, 10V 5V @ 100µA 17 nC @ 10 V ±30V 380 pF @ 100 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
STP7N105K5

STP7N105K5

MOSFET N-CH 1050V 4A TO220

STMicroelectronics
3,020 -

RFQ

STP7N105K5

Технические

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 1050 V 4A (Tc) 10V 2Ohm @ 2A, 10V 5V @ 100µA 17 nC @ 10 V ±30V 380 pF @ 100 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
TK14E65W5,S1X

TK14E65W5,S1X

MOSFET N-CH 650V 13.7A TO220

Toshiba Semiconductor and Storage
2,869 -

RFQ

TK14E65W5,S1X

Технические

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 300mOhm @ 6.9A, 10V 4.5V @ 690µA 40 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) Through Hole
IRLZ44SPBF

IRLZ44SPBF

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
2,750 -

RFQ

IRLZ44SPBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4V, 5V 28mOhm @ 31A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 3300 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA045N10N3GXKSA1

IPA045N10N3GXKSA1

MOSFET N-CH 100V 64A TO220-FP

Infineon Technologies
2,692 -

RFQ

IPA045N10N3GXKSA1

Технические

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 64A (Tc) 6V, 10V 4.5mOhm @ 64A, 10V 3.5V @ 150µA 117 nC @ 10 V ±20V 8410 pF @ 50 V - 39W (Tc) -55°C ~ 175°C (TJ) Through Hole
PSMN4R2-60PLQ

PSMN4R2-60PLQ

MOSFET N-CH 60V 130A TO220AB

Nexperia USA Inc.
3,208 -

RFQ

PSMN4R2-60PLQ

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 130A (Tc) 4.5V, 10V 3.9mOhm @ 25A, 10V 2.1V @ 1mA 151 nC @ 10 V ±20V 8533 pF @ 25 V - 263W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUP50020EL-GE3

SUP50020EL-GE3

MOSFET N-CH 60V 120A TO220AB

Vishay Siliconix
3,967 -

RFQ

SUP50020EL-GE3

Технические

Bulk TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 4.5V, 10V 2.3mOhm @ 30A, 10V 2.5V @ 250µA 126 nC @ 10 V ±20V 11113 pF @ 30 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUP60030E-GE3

SUP60030E-GE3

MOSFET N-CH 80V 120A TO220AB

Vishay Siliconix
2,211 -

RFQ

SUP60030E-GE3

Технические

Bulk TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 7.5V, 10V 3.4mOhm @ 30A, 10V 4V @ 250µA 141 nC @ 10 V ±20V 7910 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
SUP80090E-GE3

SUP80090E-GE3

MOSFET N-CH 150V 128A TO220AB

Vishay Siliconix
3,151 -

RFQ

SUP80090E-GE3

Технические

Tube ThunderFET® Active N-Channel MOSFET (Metal Oxide) 150 V 128A (Tc) 7.5V, 10V 9.4mOhm @ 30A, 10V 5V @ 250µA 95 nC @ 10 V ±20V 3425 pF @ 75 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHP25N40D-E3

SIHP25N40D-E3

MOSFET N-CH 400V 25A TO220AB

Vishay Siliconix
3,124 -

RFQ

SIHP25N40D-E3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 25A (Tc) 10V 170mOhm @ 13A, 10V 5V @ 250µA 88 nC @ 10 V ±30V 1707 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
Нахождение Чипа

Главная

Нахождение Чипа

Продукт

Нахождение Чипа

Телефон

Нахождение Чипа

Пользователь