Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SUP57N20-33-E3

SUP57N20-33-E3

MOSFET N-CH 200V 57A TO220AB

Vishay Siliconix
2,432 -

RFQ

SUP57N20-33-E3

Технические

Tube TrenchFET® Active N-Channel MOSFET (Metal Oxide) 200 V 57A (Tc) 10V 33mOhm @ 30A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 5100 pF @ 25 V - 3.75W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB60R125CPATMA1

IPB60R125CPATMA1

MOSFET N-CH 600V 25A TO263-3

Infineon Technologies
3,114 -

RFQ

IPB60R125CPATMA1

Технические

Tape & Reel (TR),Bulk CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 25A (Tc) 10V 125mOhm @ 16A, 10V 3.5V @ 1.1mA 70 nC @ 10 V ±20V 2500 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFB4332PBF

IRFB4332PBF

MOSFET N-CH 250V 60A TO220AB

Infineon Technologies
2,276 -

RFQ

IRFB4332PBF

Технические

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 250 V 60A (Tc) 10V 33mOhm @ 35A, 10V 5V @ 250µA 150 nC @ 10 V ±30V 5860 pF @ 25 V - 390W (Tc) -40°C ~ 175°C (TJ) Through Hole
IXTP160N10T

IXTP160N10T

MOSFET N-CH 100V 160A TO220AB

IXYS
2,035 -

RFQ

IXTP160N10T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 100 V 160A (Tc) 10V 7mOhm @ 25A, 10V 4.5V @ 250µA 132 nC @ 10 V ±30V 6600 pF @ 25 V - 430W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDP047N10

FDP047N10

MOSFET N-CH 100V 120A TO220-3

onsemi
300 -

RFQ

FDP047N10

Технические

Bulk,Bulk,Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 4.7mOhm @ 75A, 10V 4.5V @ 250µA 210 nC @ 10 V ±20V 15265 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
STW10N95K5

STW10N95K5

MOSFET N-CH 950V 8A TO247

STMicroelectronics
3,350 -

RFQ

STW10N95K5

Технические

Tube SuperMESH5™ Active N-Channel MOSFET (Metal Oxide) 950 V 8A (Tc) 10V 800mOhm @ 4A, 10V 5V @ 100µA 22 nC @ 10 V ±30V 630 pF @ 100 V - 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP048PBF

IRFP048PBF

MOSFET N-CH 60V 70A TO247-3

Vishay Siliconix
3,800 -

RFQ

IRFP048PBF

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 70A (Tc) 10V 18mOhm @ 44A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 2400 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFP76N15T2

IXFP76N15T2

MOSFET N-CH 150V 76A TO220AB

IXYS
2,646 -

RFQ

IXFP76N15T2

Технические

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 150 V 76A (Tc) 10V 20mOhm @ 38A, 10V 4.5V @ 250µA 97 nC @ 10 V ±20V 5800 pF @ 25 V - 350W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQA8N100C

FQA8N100C

MOSFET N-CH 1000V 8A TO3PN

onsemi
3,177 -

RFQ

FQA8N100C

Технические

Bulk,Tube QFET® Active N-Channel MOSFET (Metal Oxide) 1000 V 8A (Tc) 10V 1.45Ohm @ 4A, 10V 5V @ 250µA 70 nC @ 10 V ±30V 3220 pF @ 25 V - 225W (Tc) -55°C ~ 150°C (TJ) Through Hole
FCHD190N65S3R0-F155

FCHD190N65S3R0-F155

MOSFET N-CH 650V 17A TO247

onsemi
3,947 -

RFQ

FCHD190N65S3R0-F155

Технические

Tube SuperFET® III Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 190mOhm @ 8.5A, 10V 4.5V @ 390µA 33 nC @ 10 V ±30V 1350 pF @ 400 V - 144W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA62N15P

IXTA62N15P

MOSFET N-CH 150V 62A TO263

IXYS
3,408 -

RFQ

IXTA62N15P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 150 V 62A (Tc) 10V 40mOhm @ 31A, 10V 5.5V @ 250µA 70 nC @ 10 V ±20V 2250 pF @ 25 V - 350W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA36N30P

IXTA36N30P

MOSFET N-CH 300V 36A TO263

IXYS
2,205 -

RFQ

IXTA36N30P

Технические

Tube PolarHT™ Active N-Channel MOSFET (Metal Oxide) 300 V 36A (Tc) 10V 110mOhm @ 18A, 10V 5.5V @ 250µA 70 nC @ 10 V ±30V 2250 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA75N10P

IXTA75N10P

MOSFET N-CH 100V 75A TO263

IXYS
3,184 -

RFQ

IXTA75N10P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 25mOhm @ 500mA, 10V 5.5V @ 250µA 74 nC @ 10 V ±20V 2250 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTP50N20P

IXTP50N20P

MOSFET N-CH 200V 50A TO220AB

IXYS
300 -

RFQ

IXTP50N20P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 200 V 50A (Tc) 10V 60mOhm @ 50A, 10V 5V @ 250µA 70 nC @ 10 V ±20V 2720 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R190C6FKSA1

IPW60R190C6FKSA1

MOSFET N-CH 600V 20.2A TO247-3

Infineon Technologies
3,306 -

RFQ

IPW60R190C6FKSA1

Технические

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 20.2A (Tc) 10V 190mOhm @ 9.5A, 10V 3.5V @ 630µA 63 nC @ 10 V ±20V 1400 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPA60R160C6XKSA1

IPA60R160C6XKSA1

MOSFET N-CH 600V 23.8A TO220-FP

Infineon Technologies
2,975 -

RFQ

IPA60R160C6XKSA1

Технические

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 11.3A, 10V 3.5V @ 750µA 75 nC @ 10 V ±20V 1660 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R160C6XKSA1

IPP60R160C6XKSA1

MOSFET N-CH 600V 23.8A TO220-3

Infineon Technologies
2,959 -

RFQ

IPP60R160C6XKSA1

Технические

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 23.8A (Tc) 10V 160mOhm @ 11.3A, 10V 3.5V @ 750µA 75 nC @ 10 V ±20V 1660 pF @ 100 V - 176W (Tc) -55°C ~ 150°C (TJ) Through Hole
STF9NK90Z

STF9NK90Z

MOSFET N-CH 900V 8A TO220FP

STMicroelectronics
3,869 -

RFQ

STF9NK90Z

Технические

Tube SuperMESH™ Active N-Channel MOSFET (Metal Oxide) 900 V 8A (Tc) 10V 1.3Ohm @ 3.6A, 10V 4.5V @ 100µA 72 nC @ 10 V ±30V 2115 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
NTMTS0D6N04CLTXG

NTMTS0D6N04CLTXG

MOSFET N-CH 40V 554.5A

onsemi
2,469 -

RFQ

NTMTS0D6N04CLTXG

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 554.5A (Tc) 4.5V, 10V 0.42mOhm @ 50A, 10V 2V @ 250µA 126 nC @ 4.5 V ±20V 16013 pF @ 20 V - 5W -55°C ~ 175°C (TJ) Surface Mount
IXTA6N50D2-TRL

IXTA6N50D2-TRL

MOSFET N-CH 500V 6A TO263

IXYS
2,736 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 6A (Tj) 0V 500mOhm @ 3A, 0V 4.5V @ 250µA 96 nC @ 5 V ±20V 2800 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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