Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTY12N06T

IXTY12N06T

MOSFET N-CH 60V 12A TO252

IXYS
2,142 -

RFQ

IXTY12N06T

Технические

Tube TrenchMV™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 12A (Tc) 10V 85mOhm @ 6A, 10V 4V @ 25µA 3.4 nC @ 10 V ±20V 256 pF @ 25 V - 33W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SI1065X-T1-GE3

SI1065X-T1-GE3

MOSFET P-CH 12V 1.18A SC89-6

Vishay Siliconix
2,503 -

RFQ

SI1065X-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 1.18A (Ta) 1.8V, 4.5V 156mOhm @ 1.18A, 4.5V 950mV @ 250µA 10.8 nC @ 5 V ±8V 480 pF @ 6 V - 236mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI1071X-T1-GE3

SI1071X-T1-GE3

MOSFET P-CH 30V 0.96A SC89-6

Vishay Siliconix
2,092 -

RFQ

SI1071X-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 960mA (Ta) 2.5V, 10V 167mOhm @ 960mA, 10V 1.45V @ 250µA 13.3 nC @ 10 V ±12V 315 pF @ 15 V - 236mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI2351DS-T1-GE3

SI2351DS-T1-GE3

MOSFET P-CH 20V 2.8A SOT23-3

Vishay Siliconix
2,949 -

RFQ

SI2351DS-T1-GE3

Технические

Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.8A (Tc) - 115mOhm @ 2.4A, 4.5V 1.5V @ 250µA 5.1 nC @ 5 V - 250 pF @ 10 V - - - Surface Mount
SI4378DY-T1-GE3

SI4378DY-T1-GE3

MOSFET N-CH 20V 19A 8SO

Vishay Siliconix
2,471 -

RFQ

SI4378DY-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 19A (Ta) 2.5V, 4.5V 2.7mOhm @ 25A, 4.5V 1.8V @ 250µA 55 nC @ 4.5 V ±12V 8500 pF @ 10 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI4825DY-T1-GE3

SI4825DY-T1-GE3

MOSFET P-CH 30V 8.1A 8SO

Vishay Siliconix
3,508 -

RFQ

SI4825DY-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 8.1A (Ta) 4.5V, 10V 14mOhm @ 11.5A, 10V 3V @ 250µA 71 nC @ 10 V ±25V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5435BDC-T1-GE3

SI5435BDC-T1-GE3

MOSFET P-CH 30V 4.3A 1206-8

Vishay Siliconix
2,128 -

RFQ

SI5435BDC-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4.3A (Ta) 4.5V, 10V 45mOhm @ 4.3A, 10V 3V @ 250µA 24 nC @ 10 V ±20V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI5447DC-T1-GE3

SI5447DC-T1-GE3

MOSFET P-CH 20V 3.5A 1206-8

Vishay Siliconix
2,114 -

RFQ

SI5447DC-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 1.8V, 4.5V 76mOhm @ 3.5A, 4.5V 450mV @ 250µA (Min) 10 nC @ 4.5 V ±8V - - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI6410DQ-T1-GE3

SI6410DQ-T1-GE3

MOSFET N-CH 30V 8TSSOP

Vishay Siliconix
2,188 -

RFQ

SI6410DQ-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.8A (Ta) 4.5V, 10V 14mOhm @ 7.8A, 10V 1V @ 250µA (Min) 33 nC @ 5 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI6433BDQ-T1-GE3

SI6433BDQ-T1-GE3

MOSFET P-CH 12V 4A 8TSSOP

Vishay Siliconix
2,598 -

RFQ

SI6433BDQ-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 12 V 4A (Ta) 2.5V, 4.5V 40mOhm @ 4.8A, 4.5V 1.5V @ 250µA 15 nC @ 4.5 V ±8V - - 1.05W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI6435ADQ-T1-GE3

SI6435ADQ-T1-GE3

MOSFET P-CH 30V 4.7A 8-TSSOP

Vishay Siliconix
2,427 -

RFQ

SI6435ADQ-T1-GE3

Технические

Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 4.7A (Ta) - 30mOhm @ 5.5A, 10V 1V @ 250µA (Min) 20 nC @ 5 V - - - - - Surface Mount
SI6459BDQ-T1-GE3

SI6459BDQ-T1-GE3

MOSFET P-CH 60V 2.2A 8TSSOP

Vishay Siliconix
2,338 -

RFQ

SI6459BDQ-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 2.2A (Ta) 4.5V, 10V 115mOhm @ 2.7A, 10V 3V @ 250µA 22 nC @ 10 V ±20V - - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IPP015N04NGXKSA1

IPP015N04NGXKSA1

MOSFET N-CH 40V 120A TO220-3

Infineon Technologies
3,607 -

RFQ

IPP015N04NGXKSA1

Технические

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.5mOhm @ 100A, 10V 4V @ 200µA 250 nC @ 10 V ±20V 20000 pF @ 20 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHF068N60EF-GE3

SIHF068N60EF-GE3

MOSFET N-CH 600V 16A TO220

Vishay Siliconix
3,761 -

RFQ

SIHF068N60EF-GE3

Технические

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 68mOhm @ 16A, 10V 5V @ 250µA 77 nC @ 10 V ±30V 2628 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP068N60EF-GE3

SIHP068N60EF-GE3

MOSFET N-CH 600V 41A TO220AB

Vishay Siliconix
3,504 -

RFQ

SIHP068N60EF-GE3

Технические

Tube EF Active N-Channel MOSFET (Metal Oxide) 600 V 41A (Tc) 10V 68mOhm @ 16A, 10V 5V @ 250µA 77 nC @ 10 V ±30V 2628 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRF7749L2TR

AUIRF7749L2TR

MOSFET N-CH 60V 36A DIRECTFET

Infineon Technologies
2,697 -

RFQ

AUIRF7749L2TR

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 36A (Ta), 345A (Tc) 10V 1.5mOhm @ 120A, 10V 4V @ 250µA 275 nC @ 10 V 60V 10655 pF @ 25 V - 3.8W (Ta), 341W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA60R099P7XKSA1

IPA60R099P7XKSA1

MOSFET N-CH 600V 31A TO220

Infineon Technologies
2,974 -

RFQ

IPA60R099P7XKSA1

Технические

Bulk,Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 600 V 31A (Tc) 10V 99mOhm @ 10.5A, 10V 4V @ 530µA 45 nC @ 10 V ±20V 1952 pF @ 400 V - 29W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R125CFD7XKSA1

IPP60R125CFD7XKSA1

MOSFET N-CH 600V 18A TO220-3

Infineon Technologies
2,780 -

RFQ

IPP60R125CFD7XKSA1

Технические

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 125mOhm @ 7.8A, 10V 4.5V @ 390µA 36 nC @ 10 V ±20V 1503 pF @ 400 V - 92W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB4137PBF

IRFB4137PBF

MOSFET N-CH 300V 38A TO220

Infineon Technologies
2,979 -

RFQ

IRFB4137PBF

Технические

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 300 V 38A (Tc) 10V 69mOhm @ 24A, 10V 5V @ 250µA 125 nC @ 10 V ±20V 5168 pF @ 50 V - 341W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK14N65W5,S1F

TK14N65W5,S1F

MOSFET N-CH 650V 13.7A TO247

Toshiba Semiconductor and Storage
2,554 -

RFQ

TK14N65W5,S1F

Технические

Tube DTMOSIV Active N-Channel MOSFET (Metal Oxide) 650 V 13.7A (Ta) 10V 300mOhm @ 6.9A, 10V 4.5V @ 690µA 40 nC @ 10 V ±30V 1300 pF @ 300 V - 130W (Tc) 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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