Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTP5426NG

NTP5426NG

MOSFET N-CH 60V 120A TO220AB

onsemi
38,714 -

RFQ

NTP5426NG

Технические

Tube,Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 6mOhm @ 60A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 5800 pF @ 25 V - 215W (Tc) -55°C ~ 175°C (TJ) Through Hole
TK16J60W,S1VE

TK16J60W,S1VE

X35 PB-F POWER MOSFET TRANSISTOR

Toshiba Semiconductor and Storage
3,668 -

RFQ

TK16J60W,S1VE

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 15.8A (Ta) 10V 190mOhm @ 7.9A, 10V 3.7V @ 790µA 38 nC @ 10 V ±30V 1350 pF @ 300 V - 130W (Tc) 150°C Through Hole
IRFS5620TRLPBF

IRFS5620TRLPBF

MOSFET N-CH 200V 24A D2PAK

Infineon Technologies
3,955 -

RFQ

IRFS5620TRLPBF

Технические

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 77.5mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFP180N10T2

IXFP180N10T2

MOSFET N-CH 100V 180A TO220AB

IXYS
3,145 -

RFQ

IXFP180N10T2

Технические

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 6mOhm @ 50A, 10V 4V @ 250µA 185 nC @ 10 V ±20V 10500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
FDD24AN06LA0-F085

FDD24AN06LA0-F085

MOSFET N-CH 60V 7.1A/40A TO252AA

onsemi
3,182 -

RFQ

FDD24AN06LA0-F085

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 7.1A (Ta), 40A (Tc) 5V, 10V 19mOhm @ 40A, 10V 2V @ 250µA 21 nC @ 5 V ±20V 1850 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDH45N50F-F133

FDH45N50F-F133

MOSFET N-CH 500V 45A TO247-3

onsemi
2,723 -

RFQ

FDH45N50F-F133

Технические

Bulk,Tube UniFET™ Active N-Channel MOSFET (Metal Oxide) 500 V 45A (Tc) 10V 120mOhm @ 22.5A, 10V 5V @ 250µA 137 nC @ 10 V ±30V 6630 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDD8444L-F085

FDD8444L-F085

MOSFET N-CH 40V 16A/50A TO252AA

onsemi
2,044 -

RFQ

FDD8444L-F085

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 16A (Ta), 50A (Tc) 4.5V, 10V 5.2mOhm @ 50A, 10V 3V @ 250µA 60 nC @ 5 V ±20V 5530 pF @ 25 V - 153W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STW32NM50N

STW32NM50N

MOSFET N CH 500V 22A TO-247

STMicroelectronics
2,180 -

RFQ

STW32NM50N

Технические

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 130mOhm @ 11A, 10V 4V @ 250µA 62.5 nC @ 10 V ±25V 1973 pF @ 50 V - 190W (Tc) 150°C (TJ) Through Hole
NDS8435A

NDS8435A

MOSFET P-CH 30V 7.9A 8SOIC

onsemi
2,675 -

RFQ

NDS8435A

Технические

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 7.9A (Ta) 4.5V, 10V 23mOhm @ 7.9A, 10V 3V @ 250µA 67 nC @ 10 V ±20V 1800 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIHB33N60EF-GE3

SIHB33N60EF-GE3

MOSFET N-CH 600V 33A D2PAK

Vishay Siliconix
2,731 -

RFQ

SIHB33N60EF-GE3

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 33A (Tc) 10V 98mOhm @ 16.5A, 10V 4V @ 250µA 155 nC @ 10 V ±30V 3454 pF @ 100 V - 278W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STB13NM50N

STB13NM50N

MOSFET N-CH 500V 12A D2PAK

STMicroelectronics
3,243 -

RFQ

STB13NM50N

Технические

Tape & Reel (TR),Cut Tape (CT) MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 320mOhm @ 6A, 10V 4V @ 250µA 30 nC @ 10 V ±25V 960 pF @ 50 V - 100W (Tc) 150°C (TJ) Surface Mount
STP20NM60FD

STP20NM60FD

MOSFET N-CH 600V 20A TO220AB

STMicroelectronics
3,113 -

RFQ

STP20NM60FD

Технические

Tube FDmesh™ Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) 10V 290mOhm @ 10A, 10V 5V @ 250µA 37 nC @ 10 V ±30V 1300 pF @ 25 V - 192W (Tc) -65°C ~ 150°C (TJ) Through Hole
STB15NM60N

STB15NM60N

MOSFET N-CH 600V 14A D2PAK

STMicroelectronics
2,188 -

RFQ

STB15NM60N

Технические

Tape & Reel (TR),Cut Tape (CT) MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 299mOhm @ 7A, 10V 4V @ 250µA 37 nC @ 10 V ±25V 1250 pF @ 50 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STB15NM65N

STB15NM65N

MOSFET N-CH 650V 12A D2PAK

STMicroelectronics
3,214 -

RFQ

STB15NM65N

Технические

Tape & Reel (TR),Cut Tape (CT) MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 270mOhm @ 7.75A, 10V 4V @ 250µA 55 nC @ 10 V ±25V 1900 pF @ 50 V - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STB16NM50N

STB16NM50N

MOSFET N-CH 500V 15A D2PAK

STMicroelectronics
3,506 -

RFQ

STB16NM50N

Технические

Tape & Reel (TR),Cut Tape (CT) MDmesh™ II Obsolete N-Channel MOSFET (Metal Oxide) 500 V 15A (Tc) 10V 260mOhm @ 7.5A, 10V 4V @ 250µA 38 nC @ 10 V ±25V 1200 pF @ 50 V - 125W (Tc) 150°C (TJ) Surface Mount
STP28NM50N

STP28NM50N

MOSFET N-CH 500V 21A TO220AB

STMicroelectronics
3,375 -

RFQ

STP28NM50N

Технические

Tube MDmesh™ II Active N-Channel MOSFET (Metal Oxide) 500 V 21A (Tc) 10V 158mOhm @ 10.5A, 10V 4V @ 250µA 50 nC @ 10 V ±25V 1735 pF @ 25 V - 150W (Tc) 150°C (TJ) Through Hole
IXTP120P065T

IXTP120P065T

MOSFET P-CH 65V 120A TO220AB

IXYS
3,536 -

RFQ

IXTP120P065T

Технические

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 65 V 120A (Tc) 10V 10mOhm @ 500mA, 10V 4V @ 250µA 185 nC @ 10 V ±15V 13200 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPW17N80C3FKSA1

SPW17N80C3FKSA1

MOSFET N-CH 800V 17A TO247-3

Infineon Technologies
3,554 -

RFQ

SPW17N80C3FKSA1

Технические

Bulk,Tube CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 17A (Tc) 10V 290mOhm @ 11A, 10V 3.9V @ 1mA 177 nC @ 10 V ±20V 2320 pF @ 25 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP34N65X2

IXFP34N65X2

MOSFET N-CH 650V 34A TO220AB

IXYS
3,162 -

RFQ

IXFP34N65X2

Технические

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 105mOhm @ 17A, 10V 5.5V @ 2.5mA 56 nC @ 10 V ±30V 3330 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH18N60P

IXFH18N60P

MOSFET N-CH 600V 18A TO247AD

IXYS
3,149 -

RFQ

IXFH18N60P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 400mOhm @ 500mA, 10V 5.5V @ 2.5mA 50 nC @ 10 V ±30V 2500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ производители
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