Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXFK48N55

IXFK48N55

MOSFET N-CH 550V 48A TO264AA

IXYS
2,771 -

RFQ

IXFK48N55

Технические

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 550 V 48A (Tc) 10V 110mOhm @ 24A, 10V 4.5V @ 8mA 330 nC @ 10 V ±20V 8900 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK52N30Q

IXFK52N30Q

MOSFET N-CH 300V 52A TO264AA

IXYS
3,875 -

RFQ

IXFK52N30Q

Технические

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 300 V 52A (Tc) 10V 60mOhm @ 500mA, 10V 4V @ 4mA 150 nC @ 10 V ±20V 5300 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK60N25Q

IXFK60N25Q

MOSFET N-CH 250V 60A TO264AA

IXYS
3,065 -

RFQ

IXFK60N25Q

Технические

Tube HiPerFET™ Obsolete N-Channel MOSFET (Metal Oxide) 250 V 60A (Tc) 10V 47mOhm @ 500mA, 10V 4V @ 4mA 180 nC @ 10 V ±20V 5100 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK80N15Q

IXFK80N15Q

MOSFET N-CH 150V 80A TO264AA

IXYS
3,698 -

RFQ

IXFK80N15Q

Технические

Tube HiPerFET™, Q Class Active N-Channel MOSFET (Metal Oxide) 150 V 80A (Tc) 10V 22.5mOhm @ 40A, 10V 4V @ 4mA 180 nC @ 10 V ±20V 4500 pF @ 25 V - 360W (Tc) -55°C ~ 150°C (TJ) Through Hole
SQ4435EY-T1_GE3

SQ4435EY-T1_GE3

MOSFET P-CHANNEL 30V 15A 8SOIC

Vishay Siliconix
2,288 -

RFQ

SQ4435EY-T1_GE3

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 15A (Tc) 4.5V, 10V 18mOhm @ 8A, 10V 2.5V @ 250µA 58 nC @ 10 V ±20V 2170 pF @ 15 V - 6.8W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTMD4184PFR2G

NTMD4184PFR2G

MOSFET P-CH 30V 2.3A 8SOIC

onsemi
3,346 -

RFQ

NTMD4184PFR2G

Технические

Tape & Reel (TR),Cut Tape (CT) - Last Time Buy P-Channel MOSFET (Metal Oxide) 30 V 2.3A (Ta) 4.5V, 10V 95mOhm @ 3A, 10V 3V @ 250µA 4.2 nC @ 4.5 V ±20V 360 pF @ 10 V Schottky Diode (Isolated) 770mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQJA02EP-T1_GE3

SQJA02EP-T1_GE3

MOSFET N-CH 60V 60A PPAK SO-8

Vishay Siliconix
3,865 -

RFQ

SQJA02EP-T1_GE3

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 10V 4.8mOhm @ 10A, 10V 3.5V @ 250µA 80 nC @ 10 V ±20V 4700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJA76EP-T1_GE3

SQJA76EP-T1_GE3

MOSFET N-CH 40V 75A PPAK SO-8

Vishay Siliconix
3,287 -

RFQ

SQJA76EP-T1_GE3

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 2.4mOhm @ 10A, 10V 3.5V @ 250µA 100 nC @ 10 V ±20V 5250 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJA42EP-T1_GE3

SQJA42EP-T1_GE3

MOSFET N-CH 40V 20A PPAK SO-8

Vishay Siliconix
2,838 -

RFQ

SQJA42EP-T1_GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 20A (Tc) 4.5V, 10V 9.4mOhm @ 6A, 10V 2.3V @ 250µA 33 nC @ 10 V ±20V 1700 pF @ 25 V - 27W (Tc) -55°C ~ 175°C (TJ) Surface Mount
TPN22006NH,LQ

TPN22006NH,LQ

MOSFET N-CH 60V 9A 8TSON

Toshiba Semiconductor and Storage
2,333 -

RFQ

TPN22006NH,LQ

Технические

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 9A (Ta) 6.5V, 10V 22mOhm @ 4.5A, 10V 4V @ 100µA 12 nC @ 10 V ±20V 710 pF @ 30 V - 700mW (Ta), 18W (Tc) 150°C (TJ) Surface Mount
STD30NF06T4

STD30NF06T4

MOSFET N-CH 60V 28A DPAK

STMicroelectronics
3,148 -

RFQ

STD30NF06T4

Технические

Tape & Reel (TR),Cut Tape (CT) STripFET™ II Active N-Channel MOSFET (Metal Oxide) 60 V 28A (Tc) 10V 28mOhm @ 15A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 1750 pF @ 25 V - 70W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIS606BDN-T1-GE3

SIS606BDN-T1-GE3

MOSFET N-CH 100V 9.4A/35.3A PPAK

Vishay Siliconix
2,741 -

RFQ

SIS606BDN-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 100 V 9.4A (Ta), 35.3A (Tc) 7.5V, 10V 17.4mOhm @ 10A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 1470 pF @ 50 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOU3N50

AOU3N50

MOSFET N-CH 500V 2.8A TO251-3

Alpha & Omega Semiconductor Inc.
2,260 -

RFQ

AOU3N50

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 2.8A (Tc) 10V 3Ohm @ 1.5A, 10V 4.5V @ 250µA 8 nC @ 10 V ±30V 331 pF @ 25 V - 57W (Tc) -50°C ~ 150°C (TJ) Through Hole
SIJ462DP-T1-GE3

SIJ462DP-T1-GE3

MOSFET N-CH 60V 46.5A PPAK SO-8

Vishay Siliconix
3,079 -

RFQ

SIJ462DP-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 46.5A(Tc) - 8mOhm @ 20A, 10V 2.5V @ 250µA 32 nC @ 10 V - 1400 pF @ 30 V - - - Surface Mount
SIR188DP-T1-RE3

SIR188DP-T1-RE3

MOSFET N-CH 60V 25.5A/60A PPAK

Vishay Siliconix
2,615 -

RFQ

SIR188DP-T1-RE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 60 V 25.5A (Ta), 60A (Tc) 7.5V, 10V 3.85mOhm @ 10A, 10V 3.6V @ 250µA 44 nC @ 10 V ±20V 1920 pF @ 30 V - 5W (Ta), 65.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC025N03MSGATMA1

BSC025N03MSGATMA1

MOSFET N-CH 30V 100A TDSON-8

Infineon Technologies
3,840 -

RFQ

BSC025N03MSGATMA1

Технические

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta). 100A (Tc) 4.5V, 10V 2.5mOhm @ 30A, 10V 2V @ 250µA 98 nC @ 10 V ±20V 7600 pF @ 15 V - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTD4302T4G

NTD4302T4G

MOSFET N-CH 30V 8.4A/68A DPAK

onsemi
4,374 -

RFQ

NTD4302T4G

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Last Time Buy N-Channel MOSFET (Metal Oxide) 30 V 8.4A (Ta), 68A (Tc) 4.5V, 10V 10mOhm @ 20A, 10V 3V @ 250µA 80 nC @ 10 V ±20V 2400 pF @ 24 V - 1.04W (Ta), 75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7810DN-T1-GE3

SI7810DN-T1-GE3

MOSFET N-CH 100V 3.4A PPAK1212-8

Vishay Siliconix
3,351 -

RFQ

SI7810DN-T1-GE3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 3.4A (Ta) 6V, 10V 62mOhm @ 5.4A, 10V 4.5V @ 250µA 17 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SQ4483EY-T1_GE3

SQ4483EY-T1_GE3

MOSFET P-CHANNEL 30V 30A 8SOIC

Vishay Siliconix
3,238 -

RFQ

SQ4483EY-T1_GE3

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 8.5mOhm @ 10A, 10V 2.5V @ 250µA 113 nC @ 10 V ±20V 4500 pF @ 15 V - 7W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RS1L120GNTB

RS1L120GNTB

MOSFET N-CH 60V 12A/36A 8HSOP

Rohm Semiconductor
3,566 -

RFQ

RS1L120GNTB

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Ta), 36A (Tc) 4.5V, 10V 12.7mOhm @ 12A, 10V 2.7V @ 200µA 26 nC @ 10 V ±20V 1330 pF @ 30 V - 3W (Ta) 150°C (TJ) Surface Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
Нахождение Чипа

Главная

Нахождение Чипа

Продукт

Нахождение Чипа

Телефон

Нахождение Чипа

Пользователь