Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF3515STRR

IRF3515STRR

MOSFET N-CH 150V 41A D2PAK

Infineon Technologies
3,188 -

RFQ

IRF3515STRR

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 4.5V @ 250µA 107 nC @ 10 V ±30V 2260 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3704STRL

IRF3704STRL

MOSFET N-CH 20V 77A D2PAK

Infineon Technologies
2,401 -

RFQ

IRF3704STRL

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3704STRR

IRF3704STRR

MOSFET N-CH 20V 77A D2PAK

Infineon Technologies
2,441 -

RFQ

IRF3704STRR

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3706STRL

IRF3706STRL

MOSFET N-CH 20V 77A D2PAK

Infineon Technologies
3,001 -

RFQ

IRF3706STRL

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 2.8V, 10V 8.5mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3706STRR

IRF3706STRR

MOSFET N-CH 20V 77A D2PAK

Infineon Technologies
3,682 -

RFQ

IRF3706STRR

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 2.8V, 10V 8.5mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3707

IRF3707

MOSFET N-CH 30V 62A TO220AB

Infineon Technologies
3,409 -

RFQ

IRF3707

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 12.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3707STRL

IRF3707STRL

MOSFET N-CH 30V 62A D2PAK

Infineon Technologies
3,996 -

RFQ

IRF3707STRL

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 12.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3707STRR

IRF3707STRR

MOSFET N-CH 30V 62A D2PAK

Infineon Technologies
3,755 -

RFQ

IRF3707STRR

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 4.5V, 10V 12.5mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3708

IRF3708

MOSFET N-CH 30V 62A TO220AB

Infineon Technologies
2,788 -

RFQ

IRF3708

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 2.8V, 10V 12mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3708S

IRF3708S

MOSFET N-CH 30V 62A D2PAK

Infineon Technologies
2,673 -

RFQ

IRF3708S

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 2.8V, 10V 12mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3708STRL

IRF3708STRL

MOSFET N-CH 30V 62A D2PAK

Infineon Technologies
3,002 -

RFQ

IRF3708STRL

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 2.8V, 10V 12mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3708STRR

IRF3708STRR

MOSFET N-CH 30V 62A D2PAK

Infineon Technologies
2,992 -

RFQ

IRF3708STRR

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 62A (Tc) 2.8V, 10V 12mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RJL5014DPP-00#T2

RJL5014DPP-00#T2

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
788 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SK1157-E

2SK1157-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
339 -

RFQ

2SK1157-E

Технические

Bulk * Active - - - - - - - - - - - - - -
IRF4905STRR

IRF4905STRR

MOSFET P-CH 55V 74A D2PAK

Infineon Technologies
3,954 -

RFQ

IRF4905STRR

Технические

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 74A (Tc) 10V 20mOhm @ 38A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3400 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF510L

IRF510L

MOSFET N-CH 100V 5.6A TO262-3

Vishay Siliconix
2,791 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) - 540mOhm @ 3.4A, 10V 4V @ 250µA 8.3 nC @ 10 V - 180 pF @ 25 V - - -55°C ~ 175°C (TJ) Through Hole
IRF510STRL

IRF510STRL

MOSFET N-CH 100V 5.6A D2PAK

Vishay Siliconix
2,097 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 540mOhm @ 3.4A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF510STRR

IRF510STRR

MOSFET N-CH 100V 5.6A D2PAK

Vishay Siliconix
2,109 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 540mOhm @ 3.4A, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF520NL

IRF520NL

MOSFET N-CH 100V 9.7A TO262

Infineon Technologies
2,254 -

RFQ

IRF520NL

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.7A (Tc) 10V 200mOhm @ 5.7A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF520NSTRL

IRF520NSTRL

MOSFET N-CH 100V 9.7A D2PAK

Infineon Technologies
2,946 -

RFQ

IRF520NSTRL

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 9.7A (Tc) 10V 200mOhm @ 5.7A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 330 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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