Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF737LCL

IRF737LCL

MOSFET N-CH 300V 6.1A I2PAK

Vishay Siliconix
2,088 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 300 V 6.1A (Tc) 10V 750mOhm @ 3.7A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 430 pF @ 25 V - - - Through Hole
IRF737LCS

IRF737LCS

MOSFET N-CH 300V 6.1A D2PAK

Vishay Siliconix
3,873 -

RFQ

IRF737LCS

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 300 V 6.1A (Tc) 10V 750mOhm @ 3.7A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 430 pF @ 25 V - - - Surface Mount
IRF737LCSTRL

IRF737LCSTRL

MOSFET N-CH 300V 6.1A D2PAK

Vishay Siliconix
3,103 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 300 V 6.1A (Tc) 10V 750mOhm @ 3.7A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 430 pF @ 25 V - - - Surface Mount
IRF737LCSTRR

IRF737LCSTRR

MOSFET N-CH 300V 6.1A D2PAK

Vishay Siliconix
3,893 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 300 V 6.1A (Tc) 10V 750mOhm @ 3.7A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 430 pF @ 25 V - - - Surface Mount
IRF7402TR

IRF7402TR

MOSFET N-CH 20V 6.8A 8SO

Infineon Technologies
2,156 -

RFQ

IRF7402TR

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 6.8A (Ta) 2.7V, 4.5V 35mOhm @ 4.1A, 4.5V 700mV @ 250µA (Min) 22 nC @ 4.5 V ±12V 650 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF740ASTRL

IRF740ASTRL

MOSFET N-CH 400V 10A D2PAK

Vishay Siliconix
3,104 -

RFQ

IRF740ASTRL

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1030 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF740ASTRR

IRF740ASTRR

MOSFET N-CH 400V 10A D2PAK

Vishay Siliconix
3,049 -

RFQ

IRF740ASTRR

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 36 nC @ 10 V ±30V 1030 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF740LCL

IRF740LCL

MOSFET N-CH 400V 10A I2PAK

Vishay Siliconix
3,936 -

RFQ

IRF740LCL

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
2SK1968-E

2SK1968-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
181 -

RFQ

2SK1968-E

Технические

Bulk * Active - - - - - - - - - - - - - -
IRF740LC

IRF740LC

MOSFET N-CH 400V 10A TO220AB

Vishay Siliconix
2,530 -

RFQ

IRF740LC

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
H5N5016PL-E

H5N5016PL-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,155 -

RFQ

H5N5016PL-E

Технические

Bulk * Active - - - - - - - - - - - - - -
IRF740LCS

IRF740LCS

MOSFET N-CH 400V 10A D2PAK

Vishay Siliconix
2,841 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - - -55°C ~ 150°C (TJ) Surface Mount
GCMS080B120S1-E1

GCMS080B120S1-E1

SIC 1200V 80M MOSFET & 10A SBD S

SemiQ
3,029 -

RFQ

GCMS080B120S1-E1

Технические

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 58 nC @ 20 V +25V, -10V 1374 pF @ 1000 V - 142W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
IRF740LCSTRL

IRF740LCSTRL

MOSFET N-CH 400V 10A D2PAK

Vishay Siliconix
2,618 -

RFQ

IRF740LCSTRL

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - - -55°C ~ 150°C (TJ) Surface Mount
RJK60S5DPP-E0#T2

RJK60S5DPP-E0#T2

MOSFET N-CH 600V 20A TO220FP

Renesas Electronics America Inc
226 -

RFQ

RJK60S5DPP-E0#T2

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 20A (Tc) - 178mOhm @ 10A, 10V - 27 nC @ 10 V - 1600 pF @ 25 V Super Junction 33.7W (Tc) 150°C (TJ) Through Hole
IRF740LCSTRR

IRF740LCSTRR

MOSFET N-CH 400V 10A D2PAK

Vishay Siliconix
2,567 -

RFQ

IRF740LCSTRR

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - - -55°C ~ 150°C (TJ) Surface Mount
IXFL82N60P

IXFL82N60P

MOSFET N-CH 600V 55A ISOPLUS264

IXYS
3,326 -

RFQ

IXFL82N60P

Технические

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 55A (Tc) 10V 78mOhm @ 41A, 10V 5V @ 8mA 240 nC @ 10 V ±30V 23000 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF740L

IRF740L

MOSFET N-CH 400V 10A TO220AB

Vishay Siliconix
2,979 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 39 nC @ 10 V ±20V 1100 pF @ 25 V - - - Through Hole
IRF740STRR

IRF740STRR

MOSFET N-CH 400V 10A D2PAK

Vishay Siliconix
3,193 -

RFQ

IRF740STRR

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 10A (Tc) 10V 550mOhm @ 6A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1400 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MMIX1T600N04T2

MMIX1T600N04T2

MOSFET N-CH 40V 600A 24SMPD

IXYS
3,497 -

RFQ

MMIX1T600N04T2

Технические

Tube FRFET®, SupreMOS® Active N-Channel MOSFET (Metal Oxide) 40 V 600A (Tc) 10V 1.3mOhm @ 100A, 10V 3.5V @ 250µA 590 nC @ 10 V ±20V 40000 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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