| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2N7002KL3-TPN-CHANNEL MOSFET DFN1006-3 Micro Commercial Co |
2,616 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 410mA (Ta) | 4.5V, 10V | 1.5Ohm @ 40mA, 10V | 2.3V @ 250µA | 2.8 nC @ 10 V | ±20V | 80 pF @ 40 V | - | 100mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
PJA3411-AU_R2_000A130V P-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
3,217 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.1A (Ta) | 1.8V, 4.5V | 100mOhm @ 3.1A, 4.5V | 1.2V @ 250µA | 5.4 nC @ 4.5 V | ±12V | 416 pF @ 10 V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
RE1C002ZPTLMOSFET P-CH 20V 200MA EMT3F Rohm Semiconductor |
2,920 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 200mA (Ta) | 4.5V | 1.2Ohm @ 200mA, 4.5V | 1V @ 100µA | 1.4 nC @ 4.5 V | ±10V | 115 pF @ 10 V | - | 150mW (Ta) | -40°C ~ 150°C (TJ) | Surface Mount |
|
PJA3412-AU_R2_000A130V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
2,235 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 4.1A (Ta) | 1.8V, 4.5V | 56mOhm @ 4.1A, 4.5V | 1.2V @ 250µA | 4.6 nC @ 4.5 V | ±12V | 350 pF @ 10 V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
2N7002MTFMOSFET N-CH 60V 115MA SOT23-3 Fairchild Semiconductor |
3,524 | - |
RFQ |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 115mA (Tc) | 5V, 10V | 7.5Ohm @ 500mA, 10V | 3V @ 1mA | - | ±20V | 50 pF @ 25 V | - | 200mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
PMZ370UNE315SMALL SIGNAL N-CHANNEL MOSFET NXP USA Inc. |
2,916 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
BSS223PWL6327SMALL SIGNAL P-CHANNEL MOSFET Infineon Technologies |
2,007 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
DMN2058U-13MOSFET N-CH 20V 4.6A SOT23-3 Diodes Incorporated |
2,820 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 4.6A (Ta) | 1.8V, 10V | 35mOhm @ 6A, 10V | 1.2V @ 250µA | 7.7 nC @ 10 V | ±12V | 281 pF @ 10 V | - | 1.13W | -55°C ~ 150°C (TJ) | Surface Mount |
|
BSD816SNH6327MOSFET N-CH 20V 1.4A SOT363-6 Infineon Technologies |
3,288 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 1.4A (Ta) | - | 160mOhm @ 1.4A, 2.5V | 950mV @ 3.7µA | 0.6 nC @ 2.5 V | ±8V | 180 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMN2500UFB4-7MOSFET N-CH 20V 810MA 3DFN Diodes Incorporated |
2,418 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 810mA (Ta) | 1.8V, 4.5V | 400mOhm @ 600mA, 4.5V | 1V @ 250µA | 0.74 nC @ 4.5 V | ±6V | 60.67 pF @ 16 V | - | 460mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
PMV164ENERPMV164ENE/SOT23/TO-236AB Nexperia USA Inc. |
2,227 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 1.6A (Ta) | 4.5V, 10V | 218mOhm @ 1.6A, 10V | 2.7V @ 250µA | 3.8 nC @ 10 V | ±20V | 110 pF @ 30 V | - | 640mW (Ta), 5.8W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
PMV230ENEARMOSFET N-CH 60V 1.5A TO236AB Nexperia USA Inc. |
3,881 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 1.5A (Ta) | 4.5V, 10V | 222mOhm @ 1.5A, 10V | 2.7V @ 250µA | 4.8 nC @ 10 V | ±20V | 177 pF @ 30 V | - | 480mW (Ta), 1.45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
PJA3448_R1_00001SOT-23, MOSFET Panjit International Inc. |
2,723 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 3.3A (Ta) | 4.5V, 10V | 71mOhm @ 3.3A, 10V | 2.1V @ 250µA | 6.1 nC @ 10 V | ±20V | 241 pF @ 20 V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
RSE002N06TLMOSFET N-CH 60V 250MA EMT3 Rohm Semiconductor |
3,972 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 250mA (Ta) | 2.5V, 10V | 2.4Ohm @ 250mA, 10V | 2.3V @ 1mA | - | ±20V | 15 pF @ 25 V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount |
|
SSM3J168F,LXHFSMOS LOW RON VDS:-60V VGSS:+10/- Toshiba Semiconductor and Storage |
3,692 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, U-MOSVI | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 400mA (Ta) | 4V, 10V | 1.55Ohm @ 200mA, 10V | 2V @ 1mA | 3 nC @ 10 V | +10V, -20V | 82 pF @ 10 V | - | 600mW (Ta) | 150°C | Surface Mount |
|
DMN2710UTQ-7MOSFET BVDSS: 8V~24V SOT523 T&R Diodes Incorporated |
2,542 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 870mA (Ta) | 1.8V, 4.5V | 450mOhm @ 600mA, 4.5V | 1V @ 250µA | 0.6 nC @ 4.5 V | ±6V | 42 pF @ 16 V | - | 320mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
PJQ1917_R1_0000120V P-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
3,636 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 700mA (Ta) | 1.2V, 4.5V | 600mOhm @ 300mA, 4.5V | 1V @ 250µA | 1.1 nC @ 4.5 V | ±8V | 51 pF @ 10 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
DMP2100U-7MOSFET P CH 20V 4.3A SOT23 Diodes Incorporated |
2,554 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.3A (Ta) | 1.8V, 10V | 38mOhm @ 3.5A, 10V | 1.4V @ 250µA | 9.1 nC @ 4.5 V | ±10V | 216 pF @ 15 V | - | 800mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
PJC7412_R1_0000130V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
3,860 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 500mA (Ta) | 1.5V, 4.5V | 1.2Ohm @ 500mA, 4.5V | 1.1V @ 250µA | 0.87 nC @ 4.5 V | ±10V | 34 pF @ 15 V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
SI2310A-TPN-CHANNEL MOSFET,SOT-23 Micro Commercial Co |
3,639 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 3A | 4.5V, 10V | 105mOhm @ 3A, 10V | 1.5V @ 250µA | 6 nC @ 4.5 V | ±20V | 247 pF @ 30 V | - | 1.2W | -55°C ~ 150°C (TJ) | Surface Mount |