Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRF7738L2TR

AUIRF7738L2TR

MOSFET N-CH 40V 35A DIRECTFET

Infineon Technologies
3,586 -

RFQ

AUIRF7738L2TR

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 35A (Ta), 130A (Tc) 10V 1.6mOhm @ 109A, 10V 4V @ 250µA 194 nC @ 10 V ±20V 7471 pF @ 25 V - 3.3W (Ta), 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFB3207

AUIRFB3207

MOSFET N-CH 75V 75A TO220AB

Infineon Technologies
3,127 -

RFQ

AUIRFB3207

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 75A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 7600 pF @ 50 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFB4410

AUIRFB4410

MOSFET N-CH 100V 75A TO220AB

Infineon Technologies
300 -

RFQ

AUIRFB4410

Технические

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 10mOhm @ 58A, 10V 4V @ 150µA 180 nC @ 10 V ±20V 5150 pF @ 50 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFB4610

AUIRFB4610

MOSFET N-CH 100V 73A TO220AB

Infineon Technologies
2,876 -

RFQ

AUIRFB4610

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 73A (Tc) 10V 14mOhm @ 44A, 10V 4V @ 100µA 140 nC @ 10 V ±20V 3550 pF @ 50 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFP2907Z

AUIRFP2907Z

MOSFET N-CH 75V 170A TO247AC

Infineon Technologies
3,002 -

RFQ

AUIRFP2907Z

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 170A (Tc) 10V 4.5mOhm @ 90A, 10V 4V @ 250µA 270 nC @ 10 V ±20V 7500 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFR120Z

AUIRFR120Z

MOSFET N-CH 100V 8.7A DPAK

Infineon Technologies
5,550 -

RFQ

AUIRFR120Z

Технические

Bulk,Tube,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8.7A (Tc) 10V 190mOhm @ 5.2A, 10V 4V @ 25µA 10 nC @ 10 V ±20V 310 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR120ZTRL

AUIRFR120ZTRL

MOSFET N-CH 100V 8.7A DPAK

Infineon Technologies
2,058 -

RFQ

AUIRFR120ZTRL

Технические

Tape & Reel (TR),Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 8.7A (Tc) 10V 190mOhm @ 5.2A, 10V 4V @ 25µA 10 nC @ 10 V ±20V 310 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR2307Z

AUIRFR2307Z

MOSFET N-CH 75V 42A DPAK

Infineon Technologies
2,380 -

RFQ

AUIRFR2307Z

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 16mOhm @ 32A, 10V 4V @ 100µA 75 nC @ 10 V ±20V 2190 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR2607Z

AUIRFR2607Z

MOSFET N-CH 75V 42A DPAK

Infineon Technologies
2,894 -

RFQ

AUIRFR2607Z

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 22mOhm @ 30A, 10V 4V @ 50µA 51 nC @ 10 V ±20V 1440 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR2607ZTRL

AUIRFR2607ZTRL

MOSFET N-CH 75V 42A DPAK

Infineon Technologies
3,332 -

RFQ

AUIRFR2607ZTRL

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 42A (Tc) 10V 22mOhm @ 30A, 10V 4V @ 50µA 51 nC @ 10 V ±20V 1440 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR3504Z

AUIRFR3504Z

MOSFET N-CH 40V 42A DPAK

Infineon Technologies
3,092 -

RFQ

AUIRFR3504Z

Технические

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 9mOhm @ 42A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 1510 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR3710Z

AUIRFR3710Z

MOSFET N-CH 100V 42A DPAK

Infineon Technologies
3,975 -

RFQ

AUIRFR3710Z

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 18mOhm @ 33A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 2930 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFZ44VZS

AUIRFZ44VZS

MOSFET N-CH 60V 57A D2PAK

Infineon Technologies
3,881 -

RFQ

AUIRFZ44VZS

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 12mOhm @ 34A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1690 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFZ44VZSTRL

AUIRFZ44VZSTRL

MOSFET N-CH 60V 57A D2PAK

Infineon Technologies
3,481 -

RFQ

AUIRFZ44VZSTRL

Технические

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 12mOhm @ 34A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1690 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFZ44Z

AUIRFZ44Z

MOSFET N-CH 55V 51A TO220

Infineon Technologies
3,763 -

RFQ

AUIRFZ44Z

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.9mOhm @ 31A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 1420 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIA4265EDJ-T1-GE3

SIA4265EDJ-T1-GE3

P-CHANNEL 20-V (D-S) MOSFET POWE

Vishay Siliconix
2,079 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 20 V 7.8A (Ta), 9A (Tc) 1.8V, 4.5V 32mOhm @ 4A, 4.5V 1V @ 250µA 36 nC @ 8 V ±8V 1180 pF @ 0 V - 2.9W (Ta), 15.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIA4371EDJ-T1-GE3

SIA4371EDJ-T1-GE3

P-CHANNEL 30-V (D-S) MOSFET POWE

Vishay Siliconix
3,573 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 6.4A (Ta), 9A (Tc) 2.5V, 10V 45mOhm @ 3.7A, 10V 1.5V @ 250µA 35 nC @ 10 V ±12V - - 2.9W (Ta), 15.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
MGSF1N03LT1G

MGSF1N03LT1G

MOSFET N-CH 30V 1.6A SOT23-3

onsemi
3,629 -

RFQ

MGSF1N03LT1G

Технические

Tape & Reel (TR),Cut Tape (CT),Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 1.6A (Ta) 4.5V, 10V 100mOhm @ 1.2A, 10V 2.4V @ 250µA - ±20V 140 pF @ 5 V - 420mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJL9430A_R2_00001

PJL9430A_R2_00001

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
3,427 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 4.8A (Ta) 4.5V, 10V 50mOhm @ 4.8A, 10V 2.5V @ 250µA 14 nC @ 10 V ±20V 815 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJW2P10A_R2_00001

PJW2P10A_R2_00001

100V P-CHANNEL ENHANCEMENT MODE

Panjit International Inc.
1,566 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 100 V 1.5A (Ta) 4.5V, 10V 650mOhm @ 1.5A, 10V 2.5V @ 250µA 8 nC @ 10 V ±20V 448 pF @ 15 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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