| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SI7380ADP-T1-GE3MOSFET N-CH 30V 40A PPAK SO-8 Vishay Siliconix |
2,504 | - |
RFQ |
Технические |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 3mOhm @ 20A, 10V | 1.6V @ 250µA | 185 nC @ 10 V | ±12V | 7785 pF @ 15 V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI7382DP-T1-GE3MOSFET N-CH 30V 14A PPAK SO-8 Vishay Siliconix |
3,597 | - |
RFQ |
Технические |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 14A (Ta) | 4.5V, 10V | 4.7mOhm @ 24A, 10V | 3V @ 250µA | 40 nC @ 4.5 V | ±20V | - | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI7384DP-T1-GE3MOSFET N-CH 30V 11A PPAK SO-8 Vishay Siliconix |
2,471 | - |
RFQ |
Технические |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 8.5mOhm @ 18A, 10V | 3V @ 250µA | 18 nC @ 4.5 V | ±20V | - | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI7388DP-T1-E3MOSFET N-CH 30V 12A PPAK SO-8 Vishay Siliconix |
3,563 | - |
RFQ |
Технические |
Tape & Reel (TR) | TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Ta) | 4.5V, 10V | 7mOhm @ 19A, 10V | 1.6V @ 250µA | 24 nC @ 5 V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
PJQ5423_R2_0000130V P-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
2,665 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta), 60A (Tc) | 4.5V, 10V | 8.5mOhm @ 10A, 10V | 2.5V @ 250µA | 27 nC @ 4.5 V | ±20V | 3228 pF @ 15 V | - | 2W (Ta), 63W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
SI2319DS-T1-BE3P-CHANNEL 40-V (D-S) MOSFET Vishay Siliconix |
2,890 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 2.3A (Ta) | 4.5V, 10V | 82mOhm @ 3A, 10V | 3V @ 250µA | 17 nC @ 10 V | ±20V | 470 pF @ 20 V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI3473CDV-T1-BE3P-CHANNEL 12-V (D-S) MOSFET Vishay Siliconix |
2,862 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 8A (Ta), 8A (Tc) | 1.8V, 4.5V | 22mOhm @ 8.1A, 4.5V | 1V @ 250µA | 65 nC @ 8 V | ±8V | 2010 pF @ 6 V | - | 2W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
DMPH4029LFGQ-7MOSFET P-CH 40V 8A/22A PWRDI3333 Diodes Incorporated |
2,315 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 8A (Ta), 22A (Tc) | 4.5V, 10V | 29mOhm @ 3A, 10V | 3V @ 250µA | 34 nC @ 10 V | ±20V | 1626 pF @ 20 V | - | 1.2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |
|
RM48N100D3MOSFET N-CHANNEL 100V 48A 8DFN Rectron USA |
2,988 | - |
RFQ |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 48A (Tc) | 4.5V, 10V | 13.6mOhm @ 20A, 10V | 2.5V @ 250µA | - | +20V, -12V | 3280 pF @ 50 V | - | 61W (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | |
|
SI4153DY-T1-GE3P-CHANNEL 30-V (D-S) MOSFET SO-8 Vishay Siliconix |
3,993 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen III | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 14.3A (Ta), 19.3A (Tc) | 4.5V, 10V | 9.5mOhm @ 10A, 10V | 2.5V @ 250µA | 93 nC @ 10 V | ±25V | 3600 pF @ 15 V | - | 3.1W (Ta), 5.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
PMN50UPE,115MOSFET P-CH 20V 3.6A 6TSOP NXP USA Inc. |
3,004 | - |
RFQ |
Технические |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 3.6A (Ta) | 1.8V, 4.5V | 66mOhm @ 3.6A, 4.5V | 900mV @ 250µA | 15.7 nC @ 10 V | ±8V | 24 pF @ 10 V | - | 510mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
FQI4N25TUMOSFET N-CH 250V 3.6A I2PAK Fairchild Semiconductor |
3,041 | - |
RFQ |
Технические |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 3.6A (Tc) | 10V | 1.75Ohm @ 1.8A, 10V | 5V @ 250µA | 5.6 nC @ 10 V | ±30V | 200 pF @ 25 V | - | 3.13W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FQNL1N50BTAMOSFET N-CH 500V 270MA TO92-3 Fairchild Semiconductor |
2,193 | - |
RFQ |
Технические |
Bulk | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 270mA (Tc) | 10V | 9Ohm @ 135mA, 10V | 3.7V @ 250µA | 5.5 nC @ 10 V | ±30V | 150 pF @ 25 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IRF610AN-CHANNEL POWER MOSFET Fairchild Semiconductor |
3,841 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.3A (Tc) | 10V | 1.5Ohm @ 1.65A, 10V | 4V @ 250µA | 10 nC @ 10 V | ±30V | 210 pF @ 25 V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
FQI4N20N-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,626 | - |
RFQ |
Технические |
Bulk | QFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.6A (Tc) | 10V | 1.4Ohm @ 1.8A, 10V | 5V @ 250µA | 6.5 nC @ 10 V | ±30V | 220 pF @ 25 V | - | 3.13W (Ta), 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
BSP88L6327N-CHANNEL POWER MOSFET Infineon Technologies |
3,608 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRFHM8334TRPBF-INFMOSFET N-CH 30V 13A/43A 8PQFN DL Infineon Technologies |
2,162 | - |
RFQ |
Технические |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Ta), 43A (Tc) | - | 9mOhm @ 20A, 10V | 2.35V @ 25µA | 15 nC @ 10 V | ±20V | 1180 pF @ 10 V | - | 2.7W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
RM2N650LDMOSFET N-CHANNEL 650V 2A TO252-2 Rectron USA |
3,986 | - |
RFQ |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 2A (Tc) | 10V | 2.5Ohm @ 1A, 10V | 3.5V @ 250µA | - | ±30V | 190 pF @ 50 V | - | 23W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
RM2N650IPMOSFET N-CHANNEL 650V 2A TO251 Rectron USA |
3,444 | - |
RFQ |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 2A (Tc) | 10V | 2.5Ohm @ 1A, 10V | 3.5V @ 250µA | - | ±30V | 190 pF @ 50 V | - | 23W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
|
PJD16N06A-AU_L2_000A160V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc. |
3,261 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 4.4A (Ta), 16A (Tc) | 4.5V, 10V | 50mOhm @ 8A, 10V | 2.5V @ 250µA | 14 nC @ 10 V | ±20V | 815 pF @ 15 V | - | 2.4W (Ta), 32.6W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |