Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI7380ADP-T1-GE3

SI7380ADP-T1-GE3

MOSFET N-CH 30V 40A PPAK SO-8

Vishay Siliconix
2,504 -

RFQ

SI7380ADP-T1-GE3

Технические

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 40A (Tc) 4.5V, 10V 3mOhm @ 20A, 10V 1.6V @ 250µA 185 nC @ 10 V ±12V 7785 pF @ 15 V - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7382DP-T1-GE3

SI7382DP-T1-GE3

MOSFET N-CH 30V 14A PPAK SO-8

Vishay Siliconix
3,597 -

RFQ

SI7382DP-T1-GE3

Технические

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta) 4.5V, 10V 4.7mOhm @ 24A, 10V 3V @ 250µA 40 nC @ 4.5 V ±20V - - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7384DP-T1-GE3

SI7384DP-T1-GE3

MOSFET N-CH 30V 11A PPAK SO-8

Vishay Siliconix
2,471 -

RFQ

SI7384DP-T1-GE3

Технические

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 8.5mOhm @ 18A, 10V 3V @ 250µA 18 nC @ 4.5 V ±20V - - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7388DP-T1-E3

SI7388DP-T1-E3

MOSFET N-CH 30V 12A PPAK SO-8

Vishay Siliconix
3,563 -

RFQ

SI7388DP-T1-E3

Технические

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 12A (Ta) 4.5V, 10V 7mOhm @ 19A, 10V 1.6V @ 250µA 24 nC @ 5 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) Surface Mount
PJQ5423_R2_00001

PJQ5423_R2_00001

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
2,665 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta), 60A (Tc) 4.5V, 10V 8.5mOhm @ 10A, 10V 2.5V @ 250µA 27 nC @ 4.5 V ±20V 3228 pF @ 15 V - 2W (Ta), 63W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2319DS-T1-BE3

SI2319DS-T1-BE3

P-CHANNEL 40-V (D-S) MOSFET

Vishay Siliconix
2,890 -

RFQ

SI2319DS-T1-BE3

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 2.3A (Ta) 4.5V, 10V 82mOhm @ 3A, 10V 3V @ 250µA 17 nC @ 10 V ±20V 470 pF @ 20 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3473CDV-T1-BE3

SI3473CDV-T1-BE3

P-CHANNEL 12-V (D-S) MOSFET

Vishay Siliconix
2,862 -

RFQ

SI3473CDV-T1-BE3

Технические

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 12 V 8A (Ta), 8A (Tc) 1.8V, 4.5V 22mOhm @ 8.1A, 4.5V 1V @ 250µA 65 nC @ 8 V ±8V 2010 pF @ 6 V - 2W (Ta), 4.2W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMPH4029LFGQ-7

DMPH4029LFGQ-7

MOSFET P-CH 40V 8A/22A PWRDI3333

Diodes Incorporated
2,315 -

RFQ

DMPH4029LFGQ-7

Технические

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active P-Channel MOSFET (Metal Oxide) 40 V 8A (Ta), 22A (Tc) 4.5V, 10V 29mOhm @ 3A, 10V 3V @ 250µA 34 nC @ 10 V ±20V 1626 pF @ 20 V - 1.2W (Ta) -55°C ~ 175°C (TJ) Surface Mount
RM48N100D3

RM48N100D3

MOSFET N-CHANNEL 100V 48A 8DFN

Rectron USA
2,988 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 48A (Tc) 4.5V, 10V 13.6mOhm @ 20A, 10V 2.5V @ 250µA - +20V, -12V 3280 pF @ 50 V - 61W (Tc) -50°C ~ 150°C (TJ) Surface Mount
SI4153DY-T1-GE3

SI4153DY-T1-GE3

P-CHANNEL 30-V (D-S) MOSFET SO-8

Vishay Siliconix
3,993 -

RFQ

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 30 V 14.3A (Ta), 19.3A (Tc) 4.5V, 10V 9.5mOhm @ 10A, 10V 2.5V @ 250µA 93 nC @ 10 V ±25V 3600 pF @ 15 V - 3.1W (Ta), 5.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMN50UPE,115

PMN50UPE,115

MOSFET P-CH 20V 3.6A 6TSOP

NXP USA Inc.
3,004 -

RFQ

PMN50UPE,115

Технические

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.6A (Ta) 1.8V, 4.5V 66mOhm @ 3.6A, 4.5V 900mV @ 250µA 15.7 nC @ 10 V ±8V 24 pF @ 10 V - 510mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQI4N25TU

FQI4N25TU

MOSFET N-CH 250V 3.6A I2PAK

Fairchild Semiconductor
3,041 -

RFQ

FQI4N25TU

Технические

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 3.6A (Tc) 10V 1.75Ohm @ 1.8A, 10V 5V @ 250µA 5.6 nC @ 10 V ±30V 200 pF @ 25 V - 3.13W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQNL1N50BTA

FQNL1N50BTA

MOSFET N-CH 500V 270MA TO92-3

Fairchild Semiconductor
2,193 -

RFQ

FQNL1N50BTA

Технические

Bulk QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 270mA (Tc) 10V 9Ohm @ 135mA, 10V 3.7V @ 250µA 5.5 nC @ 10 V ±30V 150 pF @ 25 V - 1.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF610A

IRF610A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
3,841 -

RFQ

IRF610A

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 10V 1.5Ohm @ 1.65A, 10V 4V @ 250µA 10 nC @ 10 V ±30V 210 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQI4N20

FQI4N20

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
2,626 -

RFQ

FQI4N20

Технические

Bulk QFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 3.6A (Tc) 10V 1.4Ohm @ 1.8A, 10V 5V @ 250µA 6.5 nC @ 10 V ±30V 220 pF @ 25 V - 3.13W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSP88L6327

BSP88L6327

N-CHANNEL POWER MOSFET

Infineon Technologies
3,608 -

RFQ

BSP88L6327

Технические

Bulk * Active - - - - - - - - - - - - - -
IRFHM8334TRPBF-INF

IRFHM8334TRPBF-INF

MOSFET N-CH 30V 13A/43A 8PQFN DL

Infineon Technologies
2,162 -

RFQ

IRFHM8334TRPBF-INF

Технические

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 43A (Tc) - 9mOhm @ 20A, 10V 2.35V @ 25µA 15 nC @ 10 V ±20V 1180 pF @ 10 V - 2.7W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM2N650LD

RM2N650LD

MOSFET N-CHANNEL 650V 2A TO252-2

Rectron USA
3,986 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 650 V 2A (Tc) 10V 2.5Ohm @ 1A, 10V 3.5V @ 250µA - ±30V 190 pF @ 50 V - 23W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RM2N650IP

RM2N650IP

MOSFET N-CHANNEL 650V 2A TO251

Rectron USA
3,444 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 2A (Tc) 10V 2.5Ohm @ 1A, 10V 3.5V @ 250µA - ±30V 190 pF @ 50 V - 23W (Tc) -55°C ~ 150°C (TJ) Through Hole
PJD16N06A-AU_L2_000A1

PJD16N06A-AU_L2_000A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.
3,261 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 4.4A (Ta), 16A (Tc) 4.5V, 10V 50mOhm @ 8A, 10V 2.5V @ 250µA 14 nC @ 10 V ±20V 815 pF @ 15 V - 2.4W (Ta), 32.6W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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