| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
PJD2NA1K_L2_000011000V N-CHANNEL MOSFET Panjit International Inc. |
3,999 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 2A (Ta) | 10V | 9Ohm @ 1A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±30V | 385 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
NTMFS4C810NAT3GTRENCH 6 30V NCH onsemi |
5,000 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 8.2A (Ta), 46A (Tc) | 4.5V, 10V | 5.88mOhm @ 30A, 10V | 2.2V @ 250µA | 18.6 nC @ 10 V | ±20V | 987 pF @ 15 V | - | 750mW (Ta), 23.6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
RM75N60T2MOSFET N-CHANNEL 60V 75A TO220-3 Rectron USA |
3,696 | - |
RFQ |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 10V | 11.5mOhm @ 30A, 10V | 4V @ 250µA | - | ±20V | 2350 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
|
RM100N30DFMOSFET N-CHANNEL 30V 100A 8DFN Rectron USA |
2,484 | - |
RFQ |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 2.5mOhm @ 20A, 10V | 2.5V @ 250µA | - | ±20V | 5000 pF @ 15 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
|
BSS84Q-7-FBSS FAMILY SOT23 T&R 3K Diodes Incorporated |
3,333 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 130mA (Ta) | 5V | 10Ohm @ 100mA, 5V | 2V @ 1mA | 0.59 nC @ 10 V | ±20V | 45 pF @ 25 V | - | 300mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
FQD5N15TFMOSFET N-CH 150V 4.3A DPAK Fairchild Semiconductor |
3,212 | - |
RFQ |
Технические |
Bulk | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 4.3A (Tc) | 10V | 800mOhm @ 2.15A, 10V | 4V @ 250µA | 7 nC @ 10 V | ±25V | 230 pF @ 25 V | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
NTD4404NN-CHANNEL POWER MOSFET onsemi |
2,062 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
SI4416DYSMALL SIGNAL N-CHANNEL MOSFET Fairchild Semiconductor |
2,673 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta) | - | 18mOhm @ 9A, 10V | 1V @ 250µA | 20 nC @ 5 V | ±20V | 1340 pF @ 15 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
MMDFS2P102R2P-CHANNEL POWER MOSFET onsemi |
3,178 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
FDMS0309ASMOSFET N-CH 30V 21A/49A 8PQFN onsemi |
3,872 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | PowerTrench®, SyncFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 21A (Ta), 49A (Tc) | 4.5V, 10V | 3.5mOhm @ 21A, 10V | 3V @ 1mA | 47 nC @ 10 V | ±20V | 3000 pF @ 15 V | - | 2.5W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI2328DS-T1-BE3N-CHANNEL 100-V (D-S) MOSFET Vishay Siliconix |
3,826 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.15A (Ta) | 10V | 250mOhm @ 1.5A, 10V | 4V @ 250µA | 5 nC @ 10 V | ±20V | - | - | 730mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SI2333DS-T1-BE3P-CHANNEL 12-V (D-S) MOSFET Vishay Siliconix |
3,514 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 4.1A (Ta) | 1.8V, 4.5V | 32mOhm @ 5.3A, 4.5V | 1V @ 250µA | 18 nC @ 4.5 V | ±8V | 1100 pF @ 6 V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
IRF7601PBFMOSFET N-CH 20V 5.7A MICRO8 International Rectifier |
2,091 | - |
RFQ |
Технические |
Bulk | HEXFET® | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 5.7A (Ta) | - | 35mOhm @ 3.8A, 4.5V | 700mV @ 250µA (Min) | 22 nC @ 4.5 V | ±12V | 650 pF @ 15 V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
PJD8NA65A_L2_00001650V N-CHANNEL MOSFET Panjit International Inc. |
3,914 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.5A (Ta) | 10V | 1.2Ohm @ 3.75A, 10V | 4V @ 250µA | 29 nC @ 10 V | ±30V | 1245 pF @ 25 V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
MCG53N06A-TPN-CHANNEL MOSFET,DFN3333 Micro Commercial Co |
3,295 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 53A | 4.5V, 10V | 8.2mOhm @ 20A, 10V | 2.5V @ 250µA | 34 nC @ 10 V | ±20V | 2000 pF @ 35 V | - | 45W | -55°C ~ 150°C (TJ) | Surface Mount |
|
RF4L040ATTCRPCH -60V -4A POWER, DFN2020, MOS Rohm Semiconductor |
5,830 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 4A (Ta) | 4.5V, 10V | 89mOhm @ 4A, 10V | 2.5V @ 1mA | 17.3 nC @ 10 V | ±20V | 850 pF @ 30 V | - | 2W (Ta) | 150°C (TJ) | Surface Mount |
|
|
PXP6R7-30QLJPXP6R7-30QL/SOT8002/MLPAK33 Nexperia USA Inc. |
2,734 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 12.6A (Ta), 66.6A (Tc) | 4.5V, 10V | 6.7mOhm @ 12.6A, 10V | 2.5V @ 250µA | 133 nC @ 10 V | ±20V | 4400 pF @ 15 V | - | 1.8W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SQJ168ELP-T1_GE3AUTOMOTIVE N-CHANNEL 60 V (D-S) Vishay Siliconix |
3,786 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 24A (Tc) | 4.5V, 10V | 36mOhm @ 15A, 10V | 2.5V @ 250µA | 20 nC @ 10 V | ±20V | 987 pF @ 25 V | - | 29.4W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
SIHFR024-GE3MOSFET N-CHANNEL 60V Vishay Siliconix |
2,726 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 14A (Tc) | 10V | 100mOhm @ 8.4A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
SIE726DF-T1-E3MOSFET N-CH 30V 60A 10POLARPAK Vishay Siliconix |
3,881 | - |
RFQ |
Технические |
Tape & Reel (TR) | SkyFET®, TrenchFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 60A (Tc) | 4.5V, 10V | 2.4mOhm @ 25A, 10V | 3V @ 250µA | 160 nC @ 10 V | ±20V | 7400 pF @ 15 V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |