| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPLK70R2K0P7ATMA1MOSFET N-CH 700V TDSON-8 Infineon Technologies |
3,220 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT),Bulk | CoolMOS™ P7 | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | - | - | - | - | - | - | - | - | - | - | Surface Mount |
|
SIHL620STRL-GE3LOGIC MOSFET N-CHANNEL 200V Vishay Siliconix |
2,026 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.2A (Tc) | 4V, 10V | 800mOhm @ 3.1A, 10V | 2V @ 250µA | 16 nC @ 5 V | ±10V | 360 pF @ 25 V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
NVMFS5C682NLAFT1GMOSFET N-CH 60V 8.8A/25A 5DFN onsemi |
2,468 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 8.8A (Ta), 25A (Tc) | 4.5V, 10V | 21mOhm @ 10A, 10V | 2V @ 16µA | 5 nC @ 10 V | ±20V | 410 pF @ 25 V | - | 3.5W (Ta), 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
NVMFS5C468NLAFT1GMOSFET N-CH 40V 13A/37A 5DFN onsemi |
2,264 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 13A (Ta), 37A (Tc) | 4.5V, 10V | 10.3mOhm @ 20A, 10V | 2V @ 250µA | 7.3 nC @ 10 V | ±20V | 570 pF @ 25 V | - | 3.5W (Ta), 28W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
NTTFS015P03P8ZTAGMOSFET P-CH 30V 13.4A/47.6A 8DFN onsemi |
3,917 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 13.4A (Ta), 47.6A (Tc) | 4.5V, 10V | 9.3mOhm @ 12A, 10V | 3V @ 250µA | 62.3 nC @ 10 V | ±25V | 2706 pF @ 15 V | - | 2.66W (Ta), 33.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
RM80N60DFMOSFET N-CHANNEL 60V 80A 8DFN Rectron USA |
2,792 | - |
RFQ |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 80A (Tc) | 4.5V, 10V | 4mOhm @ 40A, 10V | 2.4V @ 250µA | - | ±20V | 4000 pF @ 30 V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
RM7N600IPMOSFET N-CHANNEL 600V 7A TO251 Rectron USA |
2,210 | - |
RFQ |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 580mOhm @ 3A, 10V | 4V @ 250µA | - | ±30V | 587 pF @ 50 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
|
RM80N100AT2MOSFET N-CH 100V 80A TO220-3 Rectron USA |
2,675 | - |
RFQ |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 80A (Tc) | 4.5V, 10V | 8.5mOhm @ 40A, 10V | 4V @ 250A | - | ±20V | 5480 pF @ 50 V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
|
RM120N60T2MOSFET N-CH 60V 120A TO220-3 Rectron USA |
2,743 | - |
RFQ |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 120A (Tc) | 4.5V, 10V | 4mOhm @ 60A, 10V | 2.4V @ 250µA | - | ±20V | 4000 pF @ 30 V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
|
SQJ142ELP-T1_GE3MOSFET N-CH 40V 175A PPAK SO-8 Vishay Siliconix |
3,689 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 175A (Tc) | 4.5V, 10V | 2.8mOhm @ 10A, 10V | 2.2V @ 250µA | 55 nC @ 10 V | ±20V | 3015 pF @ 25 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
|
SI7116BDN-T1-GE3MOSFET N-CH 40V 18.4A/65A PPAK Vishay Siliconix |
2,218 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 18.4A (Ta), 65A (Tc) | - | 7.4mOhm @ 16A, 10V | 2.5V @ 250µA | 48 nC @ 10 V | ±20V | 1915 pF @ 20 V | - | 5W (Ta), 62.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
SIR4608DP-T1-GE3N-CHANNEL 60 V (D-S) MOSFET POWE Vishay Siliconix |
2,024 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 13.1A (Ta), 42.8A (Tc) | 7.5V, 10V | 11.8mOhm @ 10A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 740 pF @ 30 V | - | 3.6W (Ta), 39W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
SQJ164ELP-T1_GE3AUTOMOTIVE N-CHANNEL 60 V (D-S) Vishay Siliconix |
3,466 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 75A (Tc) | 4.5V, 10V | 12mOhm @ 15A, 10V | 2.5V @ 250µA | 57 nC @ 10 V | ±20V | 3100 pF @ 25 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
IPD60R600PFD7SAUMA1CONSUMER PG-TO252-3 Infineon Technologies |
3,259 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | CoolMOS™ PFD7 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4.5V @ 80µA | 8.5 nC @ 10 V | ±20V | 344 pF @ 400 V | - | 31W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount |
|
|
SQJ154EP-T1_GE3AUTOMOTIVE N-CHANNEL 40 V (D-S) Vishay Siliconix |
3,894 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, TrenchFET® Gen IV | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 243A (Tc) | 10V | 2.5mOhm @ 15A, 10V | 3.5V @ 250µA | 65 nC @ 10 V | ±20V | 3620 pF @ 25 V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
FQD20N06TFMOSFET N-CH 60V 16.8A DPAK Fairchild Semiconductor |
3,694 | - |
RFQ |
Технические |
Bulk | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 16.8A (Tc) | 10V | 63mOhm @ 8.4A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±25V | 590 pF @ 25 V | - | 2.5W (Ta), 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
2SK1585-AZN-CHANNEL POWER MOSFET Renesas Electronics America Inc |
2,788 | - |
RFQ |
Технические |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IRFS520AN-CHANNEL POWER MOSFET Fairchild Semiconductor |
2,857 | - |
RFQ |
Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 7.2A (Tc) | 10V | 200mOhm @ 3.6A, 10V | 4V @ 250µA | 22 nC @ 10 V | ±20V | 480 pF @ 25 V | - | 28W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
STD64N4F6AGMOSFET N-CH 40V 54A DPAK STMicroelectronics |
3,921 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, STripFET™ F6 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 54A (Tc) | 10V | 8.2mOhm @ 27A, 10V | 4.5V @ 250µA | 44 nC @ 10 V | ±20V | 2415 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
RM150N40DFMOSFET N-CHANNEL 40V 150A 8DFN Rectron USA |
3,034 | - |
RFQ |
Tape & Reel (TR) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 150A (Tc) | 4.5V, 10V | 1.8mOhm @ 75A, 10V | 2.2V @ 250µA | - | ±20V | 7150 pF @ 20 V | - | 88W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |