| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SQ1420EEH-T1-GE3MOSFET N-CH 60V 1.6A SC70-6 Vishay Siliconix |
2,979 | - |
RFQ |
Технические |
Cut Tape (CT) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 1.6A (Tc) | - | 140mOhm @ 1.2A, 10V | 2.5V @ 250µA | 4 nC @ 4.5 V | - | 215 pF @ 25 V | - | - | - | Surface Mount |
|
SQ2361EES-T1-GE3MOSFET P-CH 60V 2.5A SOT23-3 Vishay Siliconix |
3,146 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 2.5A (Tc) | 4.5V, 10V | 150mOhm @ 2.4A, 10V | 2.5V @ 250µA | 17 nC @ 10 V | ±20V | 545 pF @ 30 V | - | 2W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
SQ3427EEV-T1-GE3MOSFET P-CH 60V 5.5A 6TSOP Vishay Siliconix |
2,792 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 5.5A (Tc) | 4.5V, 10V | 82mOhm @ 4.5A, 10V | 2.5V @ 250µA | 32 nC @ 10 V | ±20V | 1125 pF @ 30 V | - | 5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
SQ3419EEV-T1-GE3MOSFET P-CH 40V 7.4A 6TSOP Vishay Siliconix |
2,524 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TrenchFET® | Obsolete | P-Channel | MOSFET (Metal Oxide) | 40 V | 7.4A (Tc) | 4.5V, 10V | 50mOhm @ 2.5A, 10V | 2.5V @ 250µA | 15 nC @ 4.5 V | ±12V | 1065 pF @ 20 V | - | 5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
SQ3418EEV-T1-GE3MOSFET N-CH 40V 8A 6TSOP Vishay Siliconix |
2,244 | - |
RFQ |
Технические |
Cut Tape (CT) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 8A (Tc) | - | 32mOhm @ 5A, 10V | 2.5V @ 250µA | 11 nC @ 4.5 V | - | 660 pF @ 25 V | - | - | - | Surface Mount |
|
SQ3426EEV-T1-GE3MOSFET N-CH 60V 7A 6TSOP Vishay Siliconix |
3,648 | - |
RFQ |
Технические |
Cut Tape (CT) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 7A (Tc) | - | 42mOhm @ 5A, 10V | 2.5V @ 250µA | 12 nC @ 4.5 V | - | 700 pF @ 30 V | - | - | - | Surface Mount |
|
SQ1470EH-T1-GE3MOSFET N-CH 30V 2.8A SC70 Vishay Siliconix |
3,508 | - |
RFQ |
Технические |
Cut Tape (CT) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 2.8A (Tc) | - | 65mOhm @ 3.8A, 4.5V | 1.6V @ 250µA | 6.6 nC @ 4.5 V | - | 610 pF @ 25 V | - | - | - | Surface Mount |
|
SQ2360EES-T1-GE3MOSFET N-CH 60V 4.4A TO236 Vishay Siliconix |
2,598 | - |
RFQ |
Технические |
Cut Tape (CT) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 4.4A (Tc) | - | 85mOhm @ 6A, 10V | 2.5V @ 250µA | 12 nC @ 10 V | - | 370 pF @ 25 V | - | - | - | Surface Mount |
|
SQ3442EV-T1-GE3MOSFET N-CH 20V 4.3A 6TSOP Vishay Siliconix |
2,464 | - |
RFQ |
Технические |
Cut Tape (CT) | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 4.3A (Tc) | - | 55mOhm @ 4A, 4.5V | 1.6V @ 250µA | 5.5 nC @ 4.5 V | - | 405 pF @ 10 V | - | - | - | Surface Mount |
|
DMT15H017LPS-13MOSFET BVDSS: 101V~250V POWERDI5 Diodes Incorporated |
2,432 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 9.4A (Ta), 58A (Tc) | 4.5V, 10V | 17.5mOhm @ 20A, 10V | 2.6V @ 250µA | 50 nC @ 10 V | ±20V | 3369 pF @ 75 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
R6504END3TL1650V 4A TO-252, LOW-NOISE POWER Rohm Semiconductor |
2,370 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 4A (Tc) | 10V | 1.05Ohm @ 1.5A, 10V | 4V @ 130µA | 15 nC @ 10 V | ±20V | 220 pF @ 25 V | - | 58W (Tc) | 150°C | Surface Mount |
|
SQJ403BEEP-T1_BE3P-CHANNEL 30-V (D-S) 175C MOSFET Vishay Siliconix |
2,550 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 8.5mOhm @ 10A, 10V | 2.5V @ 250µA | 164 nC @ 10 V | ±20V | - | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
FDWS86369-F085MOSFET N-CH 80V 65A POWER56 onsemi |
3,644 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, PowerTrench® | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 65A (Tc) | 10V | 7.5mOhm @ 65A, 10V | 4V @ 250µA | 46 nC @ 10 V | ±20V | 2470 pF @ 40 V | - | 107W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount |
|
RSS100N03HZGTBNCH 30V 10A AUTOMOTIVE POWER MOS Rohm Semiconductor |
2,567 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4V, 10V | 13.3mOhm @ 10A, 10V | 2.5V @ 1mA | 20 nC @ 5 V | ±20V | 1070 pF @ 10 V | - | 2W (Ta) | 150°C (TJ) | Surface Mount |
|
STD9NM50NMOSFET N-CH 500V 5A DPAK STMicroelectronics |
3,905 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | MDmesh™ II | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 5A (Tc) | 10V | 790mOhm @ 2.5A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±25V | 570 pF @ 50 V | - | 45W (Tc) | 150°C (TJ) | Surface Mount |
|
STF7N60DM2MOSFET N-CH 600V 6A TO220FP STMicroelectronics |
3,825 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | MDmesh™ DM2 | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 900mOhm @ 3A, 10V | 4.75V @ 250µA | 7.5 nC @ 10 V | ±25V | 324 pF @ 100 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
IPD19DP10NMATMA1TRENCH >=100V PG-TO252-3 Infineon Technologies |
3,407 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | OptiMOS™ | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 2.6A (Ta), 13.7A (Tc) | 10V | 186mOhm @ 12A, 10V | 4V @ 1.04mA | 45 nC @ 10 V | ±20V | 2000 pF @ 50 V | - | 3W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
FQI32N12V2TUMOSFET N-CH 120V 32A I2PAK Fairchild Semiconductor |
3,562 | - |
RFQ |
Технические |
Tube | QFET® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120 V | 32A (Tc) | 10V | 50mOhm @ 16A, 10V | 4V @ 250µA | 53 nC @ 10 V | ±30V | 1860 pF @ 25 V | - | 3.75W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
|
IRF530MOSFET N-CH 100V 14A TO220AB Harris Corporation |
3,590 | - |
RFQ |
Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Tc) | - | 180mOhm @ 8A, 10V | 4V @ 250µA | - | ±20V | 800 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
|
DMPH4013SPSQ-13MOSFET BVDSS: 31V~40V POWERDI506 Diodes Incorporated |
3,263 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 69A (Tc) | 4.5V, 10V | 13mOhm @ 10A, 10V | 3V @ 250µA | 87 nC @ 20 V | ±20V | 4763 pF @ 20 V | - | 1.5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount |