Транзисторы - IGBT - модули

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus IGBTType Configuration Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Power-Max Vce(on)(Max)@VgeIc Current-CollectorCutoff(Max) InputCapacitance(Cies)@Vce Input NTCThermistor OperatingTemperature MountingType
IRG7T300SD12B

IRG7T300SD12B

IGBT MOD 1200V 600A POWIR 62

Infineon Technologies
2,838 -

RFQ

IRG7T300SD12B

Технические

Box - Obsolete - Single 1200 V 600 A 1800 W 2.2V @ 15V, 300A 4 mA 41.5 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
IRG7T400SD12B

IRG7T400SD12B

IGBT MOD 1200V 780A POWIR 62

Infineon Technologies
3,336 -

RFQ

IRG7T400SD12B

Технические

Box - Obsolete - Single 1200 V 780 A 2140 W 2.2V @ 15V, 400A 4 mA 58.5 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
IRG7T50FF12E

IRG7T50FF12E

IGBT MOD 1200V 100A POWIR ECO 2

Infineon Technologies
2,164 -

RFQ

IRG7T50FF12E

Технические

Box - Obsolete - Three Phase Inverter 1200 V 100 A 340 W 2.2V @ 15V, 50A 1 mA 6.7 nF @ 25 V Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
IRG7T50HF12A

IRG7T50HF12A

IGBT MOD 1200V 100A POWIR 34

Infineon Technologies
2,813 -

RFQ

IRG7T50HF12A

Технические

Box - Obsolete - Half Bridge 1200 V 100 A 340 W 2.2V @ 15V, 50A 1 mA 6.7 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
IRG7T75HF12A

IRG7T75HF12A

IGBT MOD 1200V 150A POWIR 34

Infineon Technologies
3,575 -

RFQ

IRG7T75HF12A

Технические

Box - Obsolete - Half Bridge 1200 V 150 A 450 W 2.2V @ 15V, 75A 1 mA 10.4 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
IRG7U100HF12A

IRG7U100HF12A

IGBT MOD 1200V 200A POWIR 34

Infineon Technologies
3,434 -

RFQ

IRG7U100HF12A

Технические

Box - Obsolete - Half Bridge 1200 V 200 A 580 W 2V @ 15V, 100A 1 mA 10 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
IRG7U100HF12B

IRG7U100HF12B

IGBT MOD 1200V 200A POWIR 62

Infineon Technologies
2,447 -

RFQ

IRG7U100HF12B

Технические

Box - Obsolete - Half Bridge 1200 V 200 A 580 W 2V @ 15V, 100A 1 mA 12.5 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
IRG7U150HF12B

IRG7U150HF12B

IGBT MOD 1200V 300A POWIR 62

Infineon Technologies
3,932 -

RFQ

IRG7U150HF12B

Технические

Box - Obsolete - Half Bridge 1200 V 300 A 900 W 2V @ 15V, 150A 1 mA 14 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
IRG7U200HF12B

IRG7U200HF12B

IGBT MOD 1200V 400A POWIR 62

Infineon Technologies
2,317 -

RFQ

IRG7U200HF12B

Технические

Box - Obsolete - Half Bridge 1200 V 400 A 1130 W 2V @ 15V, 200A 2 mA 20 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
IRG7U50HF12A

IRG7U50HF12A

IGBT MOD 1200V 100A POWIR 34

Infineon Technologies
3,790 -

RFQ

IRG7U50HF12A

Технические

Box - Obsolete - Half Bridge 1200 V 100 A 310 W 2V @ 15V, 50A 1 mA 6 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
IRG7U75HF12A

IRG7U75HF12A

IGBT MOD 1200V 150A POWIR 34

Infineon Technologies
2,000 -

RFQ

IRG7U75HF12A

Технические

Box - Obsolete - Half Bridge 1200 V 150 A 450 W 2V @ 15V, 75A 1 mA 7 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
FPF1C2P5MF07AM

FPF1C2P5MF07AM

IGBT MODULE 620V 39A 231W F1

onsemi
2,630 -

RFQ

FPF1C2P5MF07AM

Технические

Tray - Obsolete - Full Bridge Inverter 620 V 39 A 231 W 1.6V @ 15V, 30A 25 µA - Single Phase Bridge Rectifier No -40°C ~ 150°C (TJ) Chassis Mount
FPF2C8P2NL07A

FPF2C8P2NL07A

IGBT MODULE 650V 30A 135W F2

onsemi
2,876 -

RFQ

FPF2C8P2NL07A

Технические

Bulk,Tube - Obsolete Field Stop Three Phase 650 V 30 A 135 W 2.2V @ 15V, 30A 250 µA - Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
VS-ETF150Y65U

VS-ETF150Y65U

IGBT MOD 650V 142A EMIPAK-2B

Vishay General Semiconductor - Diodes Division
3,151 -

RFQ

VS-ETF150Y65U

Технические

Tray - Obsolete Trench Three Level Inverter 650 V 142 A 417 W 2.06V @ 15V, 100A 100 µA 6.6 nF @ 30 V Standard No 175°C (TJ) Chassis Mount
FPF2G120BF07AS

FPF2G120BF07AS

IGBT MODULE 650V 40A 156W F2

onsemi
2,322 -

RFQ

FPF2G120BF07AS

Технические

Tray,Tray - Obsolete Field Stop 3 Independent 650 V 40 A 156 W 2.2V @ 15V, 40A 250 µA - Standard Yes -40°C ~ 150°C (TJ) Through Hole
VS-GB55LA120UX

VS-GB55LA120UX

IGBT MOD 1200V 84A 431W SOT227

Vishay General Semiconductor - Diodes Division
3,864 -

RFQ

Tube HEXFRED® Obsolete NPT Single 1200 V 84 A 431 W - 50 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB55NA120UX

VS-GB55NA120UX

IGBT MOD 1200V 84A 431W SOT227

Vishay General Semiconductor - Diodes Division
3,867 -

RFQ

Tube HEXFRED® Obsolete NPT Single 1200 V 84 A 431 W - 50 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB75LA60UF

VS-GB75LA60UF

IGBT MOD 600V 109A 447W SOT227

Vishay General Semiconductor - Diodes Division
3,744 -

RFQ

Tube - Obsolete NPT Single 600 V 109 A 447 W 2V @ 15V, 35A 50 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB75NA60UF

VS-GB75NA60UF

IGBT MOD 600V 109A 447W SOT227

Vishay General Semiconductor - Diodes Division
3,119 -

RFQ

Tube - Obsolete NPT Single 600 V 109 A 447 W 2V @ 15V, 35A 50 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GT105LA120UX

VS-GT105LA120UX

IGBT MOD 1200V 134A 463W SOT227

Vishay General Semiconductor - Diodes Division
2,363 -

RFQ

Tube - Obsolete NPT Single 1200 V 134 A 463 W - 75 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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