Транзисторы - IGBT - модули

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus IGBTType Configuration Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Power-Max Vce(on)(Max)@VgeIc Current-CollectorCutoff(Max) InputCapacitance(Cies)@Vce Input NTCThermistor OperatingTemperature MountingType
VS-GA100TS120UPBF

VS-GA100TS120UPBF

IGBT MOD 1200V 182A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,170 -

RFQ

VS-GA100TS120UPBF

Технические

Bulk - Obsolete - Half Bridge 1200 V 182 A 520 W 3V @ 15V, 100A 1 mA 18.67 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GA100TS60SFPBF

VS-GA100TS60SFPBF

IGBT MOD 600V 220A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,895 -

RFQ

VS-GA100TS60SFPBF

Технические

Bulk - Obsolete PT Half Bridge 600 V 220 A 780 W 1.28V @ 15V, 100A 1 mA 16.25 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GA200HS60S1PBF

VS-GA200HS60S1PBF

IGBT MOD 600V 480A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,967 -

RFQ

Bulk - Obsolete - Half Bridge 600 V 480 A 830 W 1.21V @ 15V, 200A 1 mA 32.5 nF @ 30 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GA200SA60SP

VS-GA200SA60SP

IGBT MODULE 600V 781W SOT227

Vishay General Semiconductor - Diodes Division
2,147 -

RFQ

VS-GA200SA60SP

Технические

Bulk - Obsolete - Single 600 V - 781 W 1.3V @ 15V, 100A 1 mA 16.25 nF @ 30 V Standard No -55°C ~ 150°C (TJ) Chassis Mount
VS-GA200SA60UP

VS-GA200SA60UP

IGBT MOD 600V 200A 500W SOT227

Vishay General Semiconductor - Diodes Division
2,837 -

RFQ

Bulk - Obsolete - Single 600 V 200 A 500 W 1.9V @ 15V, 100A 1 mA 16.5 nF @ 30 V Standard No -55°C ~ 150°C (TJ) Chassis Mount
VS-GA200TH60S

VS-GA200TH60S

IGBT MOD 600V 260A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,741 -

RFQ

Bulk - Obsolete - Half Bridge 600 V 260 A 1042 W 1.9V @ 15V, 200A (Typ) 5 µA 13.1 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GA300TD60S

VS-GA300TD60S

IGBT MOD 600V 530A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,197 -

RFQ

Bulk - Obsolete - Half Bridge 600 V 530 A 1136 W 1.45V @ 15V, 300A 750 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GA400TD60S

VS-GA400TD60S

IGBT MOD 600V 750A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,761 -

RFQ

Bulk - Obsolete - Half Bridge 600 V 750 A 1563 W 1.52V @ 15V, 400A 1 mA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB05XP120KTPBF

VS-GB05XP120KTPBF

IGBT MODULE 1200V 0 76W MTP

Vishay General Semiconductor - Diodes Division
2,213 -

RFQ

VS-GB05XP120KTPBF

Технические

Bulk - Active - Three Phase Inverter 1200 V 12 A 76 W - 250 µA - Standard Yes -40°C ~ 150°C (TJ) Chassis Mount
VS-GB100DA60UP

VS-GB100DA60UP

IGBT MOD 600V 125A 447W SOT227

Vishay General Semiconductor - Diodes Division
3,783 -

RFQ

VS-GB100DA60UP

Технические

Bulk - Obsolete - Single 600 V 125 A 447 W 2.8V @ 15V, 100A 100 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB100LH120N

VS-GB100LH120N

IGBT MOD 1200V 200A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,276 -

RFQ

Bulk - Obsolete - Single 1200 V 200 A 833 W 1.77V @ 15V, 100A (Typ) 1 mA 8.96 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB100LP120N

VS-GB100LP120N

IGBT MOD 1200V 200A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,031 -

RFQ

Bulk - Obsolete - Single 1200 V 200 A 658 W 1.8V @ 15V, 100A (Typ) 1 mA 7.43 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB100NH120N

VS-GB100NH120N

IGBT MOD 1200V 200A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,327 -

RFQ

Bulk - Obsolete - Single 1200 V 200 A 833 W 2.35V @ 15V, 100A 5 mA 8.58 nF @ 25 V Standard No 150°C (TJ) Chassis Mount
VS-GB100TH120N

VS-GB100TH120N

IGBT MOD 1200V 200A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,542 -

RFQ

Bulk - Obsolete - Half Bridge 1200 V 200 A 833 W 2.35V @ 15V, 100A 5 mA 8.58 nF @ 25 V Standard No 150°C (TJ) Chassis Mount
VS-GB100TH120U

VS-GB100TH120U

IGBT MOD 1200V 200A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,729 -

RFQ

VS-GB100TH120U

Технические

Bulk - Obsolete NPT Half Bridge 1200 V 200 A 1136 W 3.6V @ 15V, 100A 5 mA 8.45 nF @ 20 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB100TP120N

VS-GB100TP120N

IGBT MOD 1200V 200A INT-A-PAK

Vishay General Semiconductor - Diodes Division
2,017 -

RFQ

Bulk - Obsolete - Half Bridge 1200 V 200 A 650 W 2.2V @ 15V, 100A 5 mA 7.43 nF @ 25 V Standard No 150°C (TJ) Chassis Mount
VS-GB100TP120U

VS-GB100TP120U

IGBT MOD 1200V 150A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,899 -

RFQ

Bulk - Obsolete - Half Bridge 1200 V 150 A 735 W 3.9V @ 15V, 100A 2 mA 4.3 nF @ 25 V Standard No - Chassis Mount
VS-GB100TS60NPBF

VS-GB100TS60NPBF

IGBT MOD 600V 108A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,443 -

RFQ

VS-GB100TS60NPBF

Технические

Bulk - Obsolete NPT Half Bridge 600 V 108 A 390 W 2.85V @ 15V, 100A 100 µA - Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB150LH120N

VS-GB150LH120N

IGBT MOD 1200V 300A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,519 -

RFQ

Bulk - Obsolete - Single 1200 V 300 A 1389 W 1.87V @ 15V, 150A (Typ) 1 mA 10.6 nF @ 25 V Standard No -40°C ~ 150°C (TJ) Chassis Mount
VS-GB150TH120N

VS-GB150TH120N

IGBT MOD 1200V 300A INT-A-PAK

Vishay General Semiconductor - Diodes Division
3,266 -

RFQ

Bulk - Obsolete - Half Bridge 1200 V 300 A 1008 W 2.35V @ 15V, 150A 5 mA 11 nF @ 25 V Standard No 150°C (TJ) Chassis Mount
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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