Texas Instruments CSD85312Q3E

Номер детали
CSD85312Q3E
Производитель
Texas Instruments
Категория:
Транзисторы - FET, MOSFET - массивы
Упаковка
8-PowerVDFN
Технические
Нахождение ЧипаCSD85312Q3E.pdf
Описание
MOSFET 2N-CH 20V 39A 8VSON
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order CSD85312Q3E on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that CSD85312Q3E is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the CSD85312Q3E. All suppliers must pass our qualification reviews before they can publish their products including CSD85312Q3E on Нахождение Чипа; we pay more attention to the channels and quality of CSD85312Q3E products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the CSD85312Q3E price and inventory displayed accurate?

The price and inventory of CSD85312Q3E fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of CSD85312Q3E?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the CSD85312Q3E we delivered, we will accept the replacement or return of the CSD85312Q3E only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of CSD85312Q3E.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as CSD85312Q3E pin diagram, CSD85312Q3E datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение CSD87351Q5D CSD87330Q3D CSD87333Q3D CSD85301Q2T CSD87312Q3E
Номер детали CSD87351Q5D CSD87330Q3D CSD87333Q3D CSD85301Q2T CSD87312Q3E
Производитель Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Packaging Tape & Reel (TR),Cut Tape (CT),Bulk Tape & Reel (TR),Cut Tape (CT),Bulk Tape & Reel (TR),Cut Tape (CT),Bulk Tape & Reel (TR),Cut Tape (CT),Bulk Tape & Reel (TR),Cut Tape (CT),Bulk
Series NexFET™ NexFET™ NexFET™ NexFET™ NexFET™
ProductStatus Active Active Active Active Active
FETType 2 N-Channel (Dual) Common Source 2 N-Channel (Dual) Common Source 2 N-Channel (Dual) Common Source 2 N-Channel (Dual) Common Source 2 N-Channel (Dual) Common Source
FETFeature Logic Level Gate, 5V Drive Logic Level Gate, 5V Drive Logic Level Gate, 5V Drive Logic Level Gate, 5V Drive Logic Level Gate, 5V Drive
DraintoSourceVoltage(Vdss) 20V 20V 20V 20V 20V
Current-ContinuousDrain(Id)@25°C 39A 39A 39A 39A 39A
RdsOn(Max)@IdVgs 12.4mOhm @ 10A, 8V 12.4mOhm @ 10A, 8V 12.4mOhm @ 10A, 8V 12.4mOhm @ 10A, 8V 12.4mOhm @ 10A, 8V
Vgs(th)(Max)@Id 1.4V @ 250µA 1.4V @ 250µA 1.4V @ 250µA 1.4V @ 250µA 1.4V @ 250µA
GateCharge(Qg)(Max)@Vgs 15.2nC @ 4.5V 15.2nC @ 4.5V 15.2nC @ 4.5V 15.2nC @ 4.5V 15.2nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 2390pF @ 10V 2390pF @ 10V 2390pF @ 10V 2390pF @ 10V 2390pF @ 10V
Power-Max 2.5W 2.5W 2.5W 2.5W 2.5W
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

CSD85312Q3E Актуальная информация

Включенные следующие детали "CSD85312Q3E" ISSI, Интегрированные Силиконовые Решения Инк CSD85312Q3E.

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