Renesas Electronics America Inc HSG1002VE-TL-E

Номер детали
HSG1002VE-TL-E
Производитель
Renesas Electronics America Inc
Категория:
Транзисторы - биполярные (BJT) - RF
Упаковка
4-SMD, Gull Wing
Технические
Нахождение ЧипаHSG1002VE-TL-E.pdf
Описание
RF 0.035A C BAND GERMANIUM NPN
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order HSG1002VE-TL-E on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that HSG1002VE-TL-E is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the HSG1002VE-TL-E. All suppliers must pass our qualification reviews before they can publish their products including HSG1002VE-TL-E on Нахождение Чипа; we pay more attention to the channels and quality of HSG1002VE-TL-E products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the HSG1002VE-TL-E price and inventory displayed accurate?

The price and inventory of HSG1002VE-TL-E fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of HSG1002VE-TL-E?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the HSG1002VE-TL-E we delivered, we will accept the replacement or return of the HSG1002VE-TL-E only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of HSG1002VE-TL-E.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as HSG1002VE-TL-E pin diagram, HSG1002VE-TL-E datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение HFA3096BZ96 HFA3134IHZ96 2SC5013-T1-A 2SC5008-T1-A 2SC5751-T2-A
Номер детали HFA3096BZ96 HFA3134IHZ96 2SC5013-T1-A 2SC5008-T1-A 2SC5751-T2-A
Производитель Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc Renesas Electronics America Inc
Packaging Bulk Bulk Bulk Bulk Bulk
Series - - - - -
ProductStatus Active Active Active Active Active
TransistorType NPN NPN NPN NPN NPN
Voltage-CollectorEmitterBreakdown(Max) 3.5V 3.5V 3.5V 3.5V 3.5V
Frequency-Transition 38GHz 38GHz 38GHz 38GHz 38GHz
NoiseFigure(dBTyp@f) 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Gain 8dB ~ 19.5dB 8dB ~ 19.5dB 8dB ~ 19.5dB 8dB ~ 19.5dB 8dB ~ 19.5dB
Power-Max 200mW 200mW 200mW 200mW 200mW
DCCurrentGain(hFE)(Min)@IcVce 100 @ 5mA, 2V 100 @ 5mA, 2V 100 @ 5mA, 2V 100 @ 5mA, 2V 100 @ 5mA, 2V
Current-Collector(Ic)(Max) 35mA 35mA 35mA 35mA 35mA
OperatingTemperature - - - - -
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

HSG1002VE-TL-E Актуальная информация

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