Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | DiodeType | Technology | Voltage-PeakReverse(Max) | Current-AverageRectified(Io) | Voltage-Forward(Vf)(Max)@If | Current-ReverseLeakage@Vr | OperatingTemperature | MountingType | VRRM(V) | I(AV)(A) | IFSM(A) | VF@IF(V) | VF@IF(A) | IR(μA) | Trr(ns) |
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MB6M-E3/45BRIDGE RECT 1P 600V 500MA MBM Vishay General Semiconductor - Diodes Division |
3,026 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 600 V | 500 mA | 1 V @ 400 mA | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-DIP (0.200, 5.08mm) | ||||||
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DF10M-E3/45BRIDGE RECT 1PHASE 1KV 1A DFM Vishay General Semiconductor - Diodes Division |
2,286 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 1 kV | 1 A | 1.1 V @ 1 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.300, 7.62mm) | ||||||
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2W08G-E4/51BRIDGE RECT 1PHASE 800V 2A WOG Vishay General Semiconductor - Diodes Division |
2,354 | - |
RFQ |
![]() Технические |
Bulk | - | Active | Single Phase | Standard | 800 V | 2 A | 1.1 V @ 2 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-Circular, WOG | ||||||
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B80C1500G-E4/51BRIDGE RECT 1PHASE 125V 1.5A WOG Vishay General Semiconductor - Diodes Division |
2,910 | - |
RFQ |
![]() Технические |
Bulk | - | Active | Single Phase | Standard | 125 V | 1.5 A | 1 V @ 1 A | 10 µA @ 125 V | -40°C ~ 125°C (TJ) | Through Hole | 4-Circular, WOG | ||||||
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DF06S-E3/45BRIDGE RECT 1PHASE 600V 1A DFS Vishay General Semiconductor - Diodes Division |
3,489 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 600 V | 1 A | 1.1 V @ 1 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD, Gull Wing | ||||||
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EDF1BM-E3/45BRIDGE RECT 1PHASE 100V 1A DFM Vishay General Semiconductor - Diodes Division |
3,353 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 100 V | 1 A | 1.05 V @ 1 A | 5 µA @ 100 V | -55°C ~ 150°C (TJ) | Through Hole | 4-EDIP (0.300, 7.62mm) | ||||||
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VS-2KBP02BRIDGE RECT 1PHASE 200V 2A D-44 Vishay General Semiconductor - Diodes Division |
3,714 | - |
RFQ |
![]() Технические |
Bulk | VS-2KBP | Active | Single Phase | Standard | 200 V | 2 A | 1 V @ 1 A | 10 µA @ 200 V | -40°C ~ 150°C (TJ) | Through Hole | 4-SIP, D-44 | ||||||
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KBL04-E4/51BRIDGE RECT 1PHASE 400V 4A KBL Vishay General Semiconductor - Diodes Division |
3,195 | - |
RFQ |
![]() Технические |
Bulk | - | Active | Single Phase | Standard | 400 V | 4 A | 1.1 V @ 4 A | 5 µA @ 400 V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBL | ||||||
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KBL08-E4/51BRIDGE RECT 1PHASE 800V 4A KBL Vishay General Semiconductor - Diodes Division |
2,836 | - |
RFQ |
![]() Технические |
Bulk | - | Active | Single Phase | Standard | 800 V | 4 A | 1.1 V @ 4 A | 5 µA @ 800 V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBL | ||||||
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GBL08-E3/45BRIDGE RECT 1PHASE 800V 3A GBL Vishay General Semiconductor - Diodes Division |
2,592 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 800 V | 3 A | 1 V @ 2 A | 10 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
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GBU4M-E3/51BRIDGE RECT 1PHASE 1KV 3A GBU Vishay General Semiconductor - Diodes Division |
3,482 | - |
RFQ |
![]() Технические |
Bulk | - | Active | Single Phase | Standard | 1 kV | 3 A | 1 V @ 4 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
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GSIB1560-E3/45BRIDGE RECT 1P 600V 3.5A GSIB-5S Vishay General Semiconductor - Diodes Division |
2,909 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 600 V | 3.5 A | 950 mV @ 7.5 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | ||||||
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GSIB1580-E3/45BRIDGE RECT 1P 800V 15A GSIB-5S Vishay General Semiconductor - Diodes Division |
3,858 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 800 V | 15 A | 950 mV @ 7.5 A | 10 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | ||||||
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GBPC606-E4/51BRIDGE RECT 1PHASE 600V 3A GBPC6 Vishay General Semiconductor - Diodes Division |
930 | - |
RFQ |
![]() Технические |
Bulk | - | Active | Single Phase | Standard | 600 V | 3 A | 1 V @ 3 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, GBPC-6 | ||||||
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GSIB2560-E3/45BRIDGE RECT 1P 600V 3.5A GSIB-5S Vishay General Semiconductor - Diodes Division |
3,110 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 600 V | 3.5 A | 1 V @ 12.5 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | ||||||
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GSIB2580-E3/45BRIDGE RECT 1P 800V 3.5A GSIB-5S Vishay General Semiconductor - Diodes Division |
3,824 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 800 V | 3.5 A | 1 V @ 12.5 A | 10 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | ||||||
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VS-KBPC804PBFBRIDGE RECT 1PHASE 400V 8A D-72 Vishay General Semiconductor - Diodes Division |
3,792 | - |
RFQ |
![]() Технические |
Bulk | VS-KBPC8 | Active | Single Phase | Standard | 400 V | 8 A | 1 V @ 3 A | 10 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, D-72 | ||||||
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BU2506-E3/51BRIDGE RECT 1P 600V 3.5A BU Vishay General Semiconductor - Diodes Division |
3,850 | - |
RFQ |
![]() Технические |
Bulk | - | Active | Single Phase | Standard | 600 V | 3.5 A | 1.05 V @ 12.5 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | ||||||
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PB3506-E3/45BRIDGE RECT 1P 600V 35A PB Vishay General Semiconductor - Diodes Division |
3,062 | - |
RFQ |
![]() Технические |
Tube | isoCink+™ | Active | Single Phase | Standard | 600 V | 35 A | 1.1 V @ 17.5 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, PB | ||||||
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PB3508-E3/45BRIDGE RECT 1P 800V 35A PB Vishay General Semiconductor - Diodes Division |
3,761 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 800 V | 35 A | 1.1 V @ 17.5 A | 10 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, PB |