Диоды - мостовые выпрямители

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
MB6M-E3/45

MB6M-E3/45

BRIDGE RECT 1P 600V 500MA MBM

Vishay General Semiconductor - Diodes Division
3,026 -

RFQ

MB6M-E3/45

Технические

Tube - Active Single Phase Standard 600 V 500 mA 1 V @ 400 mA 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-DIP (0.200, 5.08mm)
DF10M-E3/45

DF10M-E3/45

BRIDGE RECT 1PHASE 1KV 1A DFM

Vishay General Semiconductor - Diodes Division
2,286 -

RFQ

DF10M-E3/45

Технические

Tube - Active Single Phase Standard 1 kV 1 A 1.1 V @ 1 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.300, 7.62mm)
2W08G-E4/51

2W08G-E4/51

BRIDGE RECT 1PHASE 800V 2A WOG

Vishay General Semiconductor - Diodes Division
2,354 -

RFQ

2W08G-E4/51

Технические

Bulk - Active Single Phase Standard 800 V 2 A 1.1 V @ 2 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-Circular, WOG
B80C1500G-E4/51

B80C1500G-E4/51

BRIDGE RECT 1PHASE 125V 1.5A WOG

Vishay General Semiconductor - Diodes Division
2,910 -

RFQ

B80C1500G-E4/51

Технические

Bulk - Active Single Phase Standard 125 V 1.5 A 1 V @ 1 A 10 µA @ 125 V -40°C ~ 125°C (TJ) Through Hole 4-Circular, WOG
DF06S-E3/45

DF06S-E3/45

BRIDGE RECT 1PHASE 600V 1A DFS

Vishay General Semiconductor - Diodes Division
3,489 -

RFQ

DF06S-E3/45

Технические

Tube - Active Single Phase Standard 600 V 1 A 1.1 V @ 1 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
EDF1BM-E3/45

EDF1BM-E3/45

BRIDGE RECT 1PHASE 100V 1A DFM

Vishay General Semiconductor - Diodes Division
3,353 -

RFQ

EDF1BM-E3/45

Технические

Tube - Active Single Phase Standard 100 V 1 A 1.05 V @ 1 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-EDIP (0.300, 7.62mm)
VS-2KBP02

VS-2KBP02

BRIDGE RECT 1PHASE 200V 2A D-44

Vishay General Semiconductor - Diodes Division
3,714 -

RFQ

VS-2KBP02

Технические

Bulk VS-2KBP Active Single Phase Standard 200 V 2 A 1 V @ 1 A 10 µA @ 200 V -40°C ~ 150°C (TJ) Through Hole 4-SIP, D-44
KBL04-E4/51

KBL04-E4/51

BRIDGE RECT 1PHASE 400V 4A KBL

Vishay General Semiconductor - Diodes Division
3,195 -

RFQ

KBL04-E4/51

Технические

Bulk - Active Single Phase Standard 400 V 4 A 1.1 V @ 4 A 5 µA @ 400 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
KBL08-E4/51

KBL08-E4/51

BRIDGE RECT 1PHASE 800V 4A KBL

Vishay General Semiconductor - Diodes Division
2,836 -

RFQ

KBL08-E4/51

Технические

Bulk - Active Single Phase Standard 800 V 4 A 1.1 V @ 4 A 5 µA @ 800 V -50°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
GBL08-E3/45

GBL08-E3/45

BRIDGE RECT 1PHASE 800V 3A GBL

Vishay General Semiconductor - Diodes Division
2,592 -

RFQ

GBL08-E3/45

Технические

Tube - Active Single Phase Standard 800 V 3 A 1 V @ 2 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBU4M-E3/51

GBU4M-E3/51

BRIDGE RECT 1PHASE 1KV 3A GBU

Vishay General Semiconductor - Diodes Division
3,482 -

RFQ

GBU4M-E3/51

Технические

Bulk - Active Single Phase Standard 1 kV 3 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GSIB1560-E3/45

GSIB1560-E3/45

BRIDGE RECT 1P 600V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,909 -

RFQ

GSIB1560-E3/45

Технические

Tube - Active Single Phase Standard 600 V 3.5 A 950 mV @ 7.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB1580-E3/45

GSIB1580-E3/45

BRIDGE RECT 1P 800V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,858 -

RFQ

GSIB1580-E3/45

Технические

Tube - Active Single Phase Standard 800 V 15 A 950 mV @ 7.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GBPC606-E4/51

GBPC606-E4/51

BRIDGE RECT 1PHASE 600V 3A GBPC6

Vishay General Semiconductor - Diodes Division
930 -

RFQ

GBPC606-E4/51

Технические

Bulk - Active Single Phase Standard 600 V 3 A 1 V @ 3 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-Square, GBPC-6
GSIB2560-E3/45

GSIB2560-E3/45

BRIDGE RECT 1P 600V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,110 -

RFQ

GSIB2560-E3/45

Технические

Tube - Active Single Phase Standard 600 V 3.5 A 1 V @ 12.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB2580-E3/45

GSIB2580-E3/45

BRIDGE RECT 1P 800V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,824 -

RFQ

GSIB2580-E3/45

Технические

Tube - Active Single Phase Standard 800 V 3.5 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
VS-KBPC804PBF

VS-KBPC804PBF

BRIDGE RECT 1PHASE 400V 8A D-72

Vishay General Semiconductor - Diodes Division
3,792 -

RFQ

VS-KBPC804PBF

Технические

Bulk VS-KBPC8 Active Single Phase Standard 400 V 8 A 1 V @ 3 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-Square, D-72
BU2506-E3/51

BU2506-E3/51

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
3,850 -

RFQ

BU2506-E3/51

Технические

Bulk - Active Single Phase Standard 600 V 3.5 A 1.05 V @ 12.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
PB3506-E3/45

PB3506-E3/45

BRIDGE RECT 1P 600V 35A PB

Vishay General Semiconductor - Diodes Division
3,062 -

RFQ

PB3506-E3/45

Технические

Tube isoCink+™ Active Single Phase Standard 600 V 35 A 1.1 V @ 17.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, PB
PB3508-E3/45

PB3508-E3/45

BRIDGE RECT 1P 800V 35A PB

Vishay General Semiconductor - Diodes Division
3,761 -

RFQ

PB3508-E3/45

Технические

Tube - Active Single Phase Standard 800 V 35 A 1.1 V @ 17.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, PB
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