Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | DiodeType | Technology | Voltage-PeakReverse(Max) | Current-AverageRectified(Io) | Voltage-Forward(Vf)(Max)@If | Current-ReverseLeakage@Vr | OperatingTemperature | MountingType | VRRM(V) | I(AV)(A) | IFSM(A) | VF@IF(V) | VF@IF(A) | IR(μA) | Trr(ns) |
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BU2506-M3/51BRIDGE RECT 1P 600V 3.5A BU Vishay General Semiconductor - Diodes Division |
3,215 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 600 V | 3.5 A | 1.05 V @ 12.5 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | ||||||
|
BU2508-M3/51BRIDGE RECT 1P 800V 3.5A BU Vishay General Semiconductor - Diodes Division |
3,105 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 800 V | 3.5 A | 1.05 V @ 12.5 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | ||||||
|
BU2510-M3/51BRIDGE RECT 1P 1KV 3.5A BU Vishay General Semiconductor - Diodes Division |
3,881 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 1 kV | 3.5 A | 1.05 V @ 12.5 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | ||||||
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BU2006-M3/45BRIDGE RECT 1P 600V 20A BU Vishay General Semiconductor - Diodes Division |
2,091 | - |
RFQ |
![]() Технические |
Bulk | - | Active | Single Phase | Standard | 600 V | 20 A | 1.05 V @ 10 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | ||||||
|
BU2008-M3/45BRIDGE RECT 1P 800V 20A BU Vishay General Semiconductor - Diodes Division |
2,812 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 800 V | 20 A | 1.05 V @ 10 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | ||||||
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BU25H06-M3/PBRIDGE RECT 1P 600V 3.5A BU Vishay General Semiconductor - Diodes Division |
3,426 | - |
RFQ |
![]() Технические |
Tube | isoCink+™ | Active | Single Phase | Standard | 600 V | 3.5 A | 1.05 V @ 12.5 A | 5 µA @ 600 V | -55°C ~ 175°C (TJ) | Through Hole | 4-SIP, BU | ||||||
|
BU25H08-M3/PBRIDGE RECT 1P 600V 3.5A BU Vishay General Semiconductor - Diodes Division |
2,673 | - |
RFQ |
![]() Технические |
Tube | isoCink+™ | Active | Single Phase | Standard | 600 V | 3.5 A | 1.05 V @ 12.5 A | 5 µA @ 600 V | -55°C ~ 175°C (TJ) | Through Hole | 4-SIP, BU | ||||||
|
BU25H06-E3/PBRIDGE RECT 1P 600V 3.5A BU Vishay General Semiconductor - Diodes Division |
3,087 | - |
RFQ |
![]() Технические |
Tube | isoCink+™ | Active | Single Phase | Standard | 600 V | 3.5 A | 1.05 V @ 12.5 A | 5 µA @ 600 V | -55°C ~ 175°C (TJ) | Through Hole | 4-SIP, BU | ||||||
|
BU25H08-E3/PBRIDGE RECT 1P 600V 3.5A BU Vishay General Semiconductor - Diodes Division |
3,415 | - |
RFQ |
![]() Технические |
Tube | isoCink+™ | Active | Single Phase | Standard | 600 V | 3.5 A | 1.05 V @ 12.5 A | 5 µA @ 600 V | -55°C ~ 175°C (TJ) | Through Hole | 4-SIP, BU | ||||||
|
BU2508-M3/45BRIDGE RECT 1P 800V 3.5A BU Vishay General Semiconductor - Diodes Division |
2,642 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 800 V | 3.5 A | 1.05 V @ 12.5 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | ||||||
|
BU2510-M3/45BRIDGE RECT 1P 1KV 3.5A BU Vishay General Semiconductor - Diodes Division |
2,862 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 1 kV | 3.5 A | 1.05 V @ 12.5 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | ||||||
|
GSIB2520N-M3/45BRIDGE RECT 1P 200V 25A GSIB-5S Vishay General Semiconductor - Diodes Division |
2,024 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 200 V | 25 A | 1 V @ 12.5 A | 10 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | ||||||
|
GSIB2540N-M3/45BRIDGE RECT 1P 400V 25A GSIB-5S Vishay General Semiconductor - Diodes Division |
3,538 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 400 V | 25 A | - | 10 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | ||||||
|
GSIB2560N-M3/45BRIDGE RECT 1P 600V 25A GSIB-5S Vishay General Semiconductor - Diodes Division |
3,620 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 600 V | 25 A | 1 V @ 12.5 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GSIB-5S | ||||||
|
PB3008-E3/45BRIDGE RECT 1P 800V 30A PB Vishay General Semiconductor - Diodes Division |
3,487 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 800 V | 30 A | 1.1 V @ 15 A | 10 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, PB | ||||||
|
KBU6A-E4/51BRIDGE RECT 1PHASE 50V 6A KBU Vishay General Semiconductor - Diodes Division |
2,484 | - |
RFQ |
![]() Технические |
Bulk | - | Active | Single Phase | Standard | 50 V | 6 A | 1 V @ 6 A | 5 µA @ 50 V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | ||||||
|
KBU8A-E4/51BRIDGE RECT 1PHASE 50V 8A KBU Vishay General Semiconductor - Diodes Division |
3,418 | - |
RFQ |
![]() Технические |
Bulk | - | Active | Single Phase | Standard | 50 V | 8 A | 1 V @ 8 A | 10 µA @ 50 V | -50°C ~ 150°C (TJ) | Through Hole | 4-SIP, KBU | ||||||
![]() |
VS-KBPC6005BRIDGE RECTIFIER 50V 6.0A D-72 Vishay General Semiconductor - Diodes Division |
3,319 | - |
RFQ |
![]() Технические |
Bulk | VS-KBPC6 | Active | Single Phase | Standard | 50 V | 6 A | 1.2 V @ 3 A | 10 µA @ 50 V | -40°C ~ 150°C (TJ) | Through Hole | 4-Square, D-72 | ||||||
![]() |
VS-KBPC606BRIDGE RECTIFIER 600V 6.0A D-72 Vishay General Semiconductor - Diodes Division |
2,068 | - |
RFQ |
![]() Технические |
Bulk | VS-KBPC6 | Active | Single Phase | Standard | 600 V | 6 A | 1.2 V @ 3 A | 10 µA @ 600 V | -40°C ~ 150°C (TJ) | Through Hole | 4-Square, D-72 | ||||||
![]() |
VS-KBPC802BRIDGE RECTIFIER 200V 8.0A D-72 Vishay General Semiconductor - Diodes Division |
3,539 | - |
RFQ |
![]() Технические |
Bulk | VS-KBPC8 | Active | Single Phase | Standard | 200 V | 8 A | 1 V @ 3 A | 10 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-Square, D-72 |