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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-90APS08L-M3RECTIFIER DIODE 90A 800V TO-247A Vishay General Semiconductor - Diodes Division |
3,029 | - |
RFQ |
Технические |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 800 V | 800 V | 90A | -40°C ~ 150°C | 1.2 V @ 90 A | |
|
|
VS-EBU15006-F4DIODE GP 600V 150A POWERTAB Vishay General Semiconductor - Diodes Division |
3,643 | - |
RFQ |
Технические |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 8 µA @ 600 V | 600 V | 150A | -55°C ~ 175°C | 1.63 V @ 150 A |
|
BYV98-200-TAPDIODE AVALANCHE 200V 4A SOD64 Vishay General Semiconductor - Diodes Division |
2,138 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 35 ns | 10 µA @ 200 V | 200 V | 4A | -55°C ~ 175°C | 1.1 V @ 5 A | |
|
1N5408-E3/73DIODE GEN PURP 1KV 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,385 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 1000 V | 1000 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
|
BYW178-TAPDIODE AVALANCHE 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,864 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 60 ns | 1 µA @ 800 V | 800 V | 3A | -55°C ~ 175°C | 1.9 V @ 3 A | |
|
|
1N5401-E3/73DIODE GEN PURP 100V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,334 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
|
SF5406-TAPDIODE GEN PURP 600V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,761 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.7 V @ 3 A | |
|
|
1N5404-E3/73DIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,778 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 400 V | 400 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
|
SF5407-TAPDIODE GEN PURP 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,698 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 5 µA @ 800 V | 800 V | 3A | -55°C ~ 175°C | 1.7 V @ 3 A | |
|
VS-MBRS1100-M3/5BTDIODE SCHOTTKY 100V 1A SMB Vishay General Semiconductor - Diodes Division |
2,758 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 42pF @ 5V, 1MHz | - | 500 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 780 mV @ 1 A | |
|
B230LA-E3/5ATDIODE SCHOTTKY 30V 2A DO214AC Vishay General Semiconductor - Diodes Division |
3,391 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 2A | -65°C ~ 150°C | 500 mV @ 2 A | |
|
SS2FL3-M3/HDIODE SCHOTTKY 30V 2A DO-219AB Vishay General Semiconductor - Diodes Division |
3,902 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 145pF @ 4V, 1MHz | - | 200 µA @ 30 V | 30 V | 2A | -55°C ~ 150°C | 540 mV @ 2 A |
|
|
SS1FH10HM3/HDIODE SCHOTTKY 100V 1A DO-219AB Vishay General Semiconductor - Diodes Division |
2,919 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 70pF @ 4V, 1MHz | - | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 175°C | 800 mV @ 1 A |
|
|
1N5407-E3/73DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,489 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 800 V | 800 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
VS-40HFLR10S02DIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division |
2,501 | - |
RFQ |
Технические |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 200 ns | 100 µA @ 100 V | 100 V | 40A | -40°C ~ 125°C | 1.95 V @ 40 A | |
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SF5406-TRDIODE GEN PURP 600V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,036 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.7 V @ 3 A | |
|
FES8HT-E3/45DIODE GEN PURP 500V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,074 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 500 V | 500 V | 8A | -55°C ~ 150°C | 1.5 V @ 8 A | |
|
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SF5407-TRDIODE GEN PURP 800V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,853 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 5 µA @ 800 V | 800 V | 3A | -55°C ~ 175°C | 1.7 V @ 3 A | |
|
VI10150S-M3/4WDIODE SCHOTTKY 10A 150V TO-262AA Vishay General Semiconductor - Diodes Division |
2,659 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 150 µA @ 150 V | 150 V | 10A | -40°C ~ 150°C | 1.2 V @ 10 A | |
|
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VS-15ETH06-1-M3DIODE GEN PURP 600V 15A TO262AA Vishay General Semiconductor - Diodes Division |
3,621 | - |
RFQ |
Технические |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.2 V @ 15 A |
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