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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-1N1184DIODE GEN PURP 100V 35A DO203AB Vishay General Semiconductor - Diodes Division |
3,849 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 mA @ 100 V | 100 V | 35A | -65°C ~ 190°C | 1.7 V @ 110 A | |
|
VS-15ETL06-1-M3DIODE HYPERFAST 600V 15A TO262 Vishay General Semiconductor - Diodes Division |
3,780 | - |
RFQ |
Технические |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 270 ns | 10 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
|
VF20100S-M3/4WDIODE SCHOTTKY 20A 100V ITO220AB Vishay General Semiconductor - Diodes Division |
3,105 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 100 V | 100 V | 20A | -40°C ~ 150°C | 900 mV @ 20 A | ||
|
|
VS-15ETX06-1-M3DIODE GEN PURP 600V 15A TO262AA Vishay General Semiconductor - Diodes Division |
2,136 | - |
RFQ |
Технические |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 32 ns | 50 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 3.2 V @ 15 A |
|
VB10150S-E3/4WDIODE SCHOTTKY 150V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,149 | - |
RFQ |
Технические |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 1.2 V @ 10 A |
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|
SB1H100-E3/54DIODE SCHOTTKY 100V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,245 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 µA @ 100 V | 100 V | 1A | 175°C (Max) | 770 mV @ 1 A | |
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V3P6HM3_A/HDIODE SCHOTTKY 60V 3A DO220AA Vishay General Semiconductor - Diodes Division |
2,781 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 250pF @ 4V, 1MHz | - | 900 µA @ 60 V | 60 V | 3A (DC) | -55°C ~ 150°C | 630 mV @ 3 A |
|
|
VB20120SG-E3/4WDIODE SCHOTTKY 120V 20A TO263AB Vishay General Semiconductor - Diodes Division |
3,963 | - |
RFQ |
Технические |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 250 µA @ 120 V | 120 V | 20A | -40°C ~ 150°C | 1.33 V @ 20 A |
|
VS-8TQ060-M3DIODE GEN PURP 60V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,451 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 500pF @ 5V, 1MHz | - | 550 µA @ 60 V | 60 V | 8A | -55°C ~ 175°C | 880 mV @ 16 A | |
|
|
VF30100SG-M3/4WDIODE SCHOTTKY 30A 100V ITO220AB Vishay General Semiconductor - Diodes Division |
3,994 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 100 V | 100 V | 30A | -40°C ~ 150°C | 910 mV @ 30 A | ||
|
|
VS-HFA16TB120SL-M3DIODE GEN PURP 1.2KV 16A D2PAK Vishay General Semiconductor - Diodes Division |
3,211 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 135 ns | 20 µA @ 1200 V | 1200 V | 16A (DC) | -55°C ~ 150°C | 3.93 V @ 32 A |
|
|
VS-8TQ080-M3DIODE SCHOTTKY 80V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,599 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 500pF @ 5V, 1MHz | - | 550 µA @ 80 V | 80 V | 8A | -55°C ~ 175°C | 880 mV @ 16 A | |
|
GP30A-E3/54DIODE GEN PURP 50V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,013 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 5 µA @ 50 V | 50 V | 3A | -65°C ~ 175°C | 1.2 V @ 3 A |
|
|
VS-HFA16TB120SR-M3DIODE GEN PURP 1.2KV 16A D2PAK Vishay General Semiconductor - Diodes Division |
3,859 | - |
RFQ |
Технические |
Tape & Reel (TR) | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 135 ns | 20 µA @ 1200 V | 1200 V | 16A (DC) | -55°C ~ 150°C | 3.93 V @ 32 A |
|
|
GP30B-E3/54DIODE GEN PURP 100V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,971 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 5 µA @ 100 V | 100 V | 3A | -65°C ~ 175°C | 1.2 V @ 3 A |
|
BYV98-50-TAPDIODE AVALANCHE 50V 4A SOD64 Vishay General Semiconductor - Diodes Division |
2,592 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 35 ns | 10 µA @ 50 V | 50 V | 4A | -55°C ~ 175°C | 1.1 V @ 5 A | |
|
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GP30D-E3/54DIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,194 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1.1 V @ 3 A |
|
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BYW172D-TAPDIODE AVALANCHE 200V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,242 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 1 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 1.5 V @ 9 A | |
|
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1N5407GP-E3/54DIODE GEN PURP 800V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,289 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 30pF @ 4V, 1MHz | - | 5 µA @ 400 V | 800 V | 3A | -50°C ~ 150°C | 1.2 V @ 3 A | |
|
BYS12-90-E3/TRDIODE SCHOTTKY 90V 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
2,599 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 90 V | 90 V | 1.5A | -55°C ~ 150°C | 750 mV @ 1 A |
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