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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AS4PJ-M3/86ADIODE AVALANCHE 600V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
3,777 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 600 V | 600 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A |
|
GI1-1600GP-E3/54DIODE GEN PURP 1.6KV 1A DO204AC Vishay General Semiconductor - Diodes Division |
2,727 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 10 µA @ 1600 V | 1600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
DGP15-E3/54DIODE GEN PURP 1.5KV 1.5A DO204 Vishay General Semiconductor - Diodes Division |
3,198 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 20 µs | 5 µA @ 1500 V | 1500 V | 1.5A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
S3M-E3/57TDIODE GEN PURP 1KV 3A DO214AB Vishay General Semiconductor - Diodes Division |
431 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 1000 V | 1000 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A | |
|
VS-30WQ10FNTRHM3DIODE SCHOTTKY DPAK Vishay General Semiconductor - Diodes Division |
3,435 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 92pF @ 5V, 1MHz | - | 1 mA @ 100 V | 100 V | 3.5A | -40°C ~ 150°C | 810 mV @ 3 A |
|
VS-40HFL40S05DIODE GEN PURP 400V 40A DO203AB Vishay General Semiconductor - Diodes Division |
2,381 | - |
RFQ |
Технические |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 400 V | 400 V | 40A | -40°C ~ 125°C | 1.95 V @ 40 A | |
|
FESF8JTHE3_A/PDIODE GEN PURP 600V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
3,493 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.5 V @ 8 A |
|
VS-ETU0805-M3DIODE GEN PURP 500V 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,257 | - |
RFQ |
Технические |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 9 µA @ 500 V | 500 V | 8A | -65°C ~ 175°C | 1.25 V @ 8 A |
|
VS-12FL100S05DIODE GEN PURP 1KV 12A DO203AA Vishay General Semiconductor - Diodes Division |
2,678 | - |
RFQ |
Технические |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 50 µA @ 1000 V | 1000 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | |
|
USB260HM3/52TDIODE GEN PURP 600V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,456 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 45pF @ 4V, 1MHz | 30 ns | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.6 V @ 2 A |
|
|
S3J-E3/57TDIODE GEN PURP 600V 3A DO214AB Vishay General Semiconductor - Diodes Division |
493 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A | |
|
MF10H100HE3_B/PDIODE SCHOTTKY 100V 10A TO220AC Vishay General Semiconductor - Diodes Division |
2,916 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 4.5 µA @ 100 V | 100 V | 10A | -65°C ~ 175°C | 880 mV @ 20 A |
|
|
VS-12FLR100S05DIODE GEN PURP 1KV 12A DO203AA Vishay General Semiconductor - Diodes Division |
2,187 | - |
RFQ |
Технические |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 500 ns | 50 µA @ 1000 V | 1000 V | 12A | -65°C ~ 150°C | 1.4 V @ 12 A | |
|
|
VS-90EPF12L-M3RECTIFIER DIODE 90A 1200V TO-247 Vishay General Semiconductor - Diodes Division |
3,298 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 480 ns | 100 µA @ 1200 V | 1200 V | 90A | -40°C ~ 150°C | 1.38 V @ 90 A | |
|
|
U3D-E3/57TDIODE GEN PURP 200V 2A DO214AB Vishay General Semiconductor - Diodes Division |
2,789 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 20 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 900 mV @ 3 A | |
|
VS-8ETH06STRLHM3DIODE GEN PURP 600V 8A TO263 Vishay General Semiconductor - Diodes Division |
2,985 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 22 ns | 50 µA @ 600 V | 600 V | 8A | -55°C ~ 175°C | 2.4 V @ 8 A |
|
|
AU2PJ-M3/86ADIODE AVALANCHE 600V 1.6A TO277A Vishay General Semiconductor - Diodes Division |
3,256 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 42pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 1.6A (DC) | -55°C ~ 175°C | 1.9 V @ 2 A |
|
|
VS-52PF120DIODE GEN PURP 1.2KV 50A DO203AB Vishay General Semiconductor - Diodes Division |
3,024 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 1200 V | 50A | -55°C ~ 180°C | 1.4 V @ 125 A | |
|
|
VS-80PF120DIODE GEN PURP 1.2KV 80A DO203AB Vishay General Semiconductor - Diodes Division |
2,599 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 1200 V | 80A | -55°C ~ 180°C | 1.4 V @ 220 A | |
|
MUR460-E3/73DIODE GEN PURP 600V 4A DO201AD Vishay General Semiconductor - Diodes Division |
3,029 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 10 µA @ 600 V | 600 V | 4A | -65°C ~ 175°C | 1.28 V @ 4 A |
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