Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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VS-15ETL06HN3DIODE GEN PURP 600V 15A TO220AC Vishay General Semiconductor - Diodes Division |
2,178 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 220 ns | 10 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
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BYV98-150-TAPDIODE AVALANCHE 150V 4A SOD64 Vishay General Semiconductor - Diodes Division |
2,685 | - |
RFQ |
![]() Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 35 ns | 10 µA @ 150 V | 150 V | 4A | -55°C ~ 175°C | 1.1 V @ 5 A | |
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VS-97PFR120DIODE GEN PURP 1.2KV 95A DO203AB Vishay General Semiconductor - Diodes Division |
2,889 | - |
RFQ |
![]() Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1200 V | 95A | -55°C ~ 180°C | 1.4 V @ 267 A | |
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VS-95PF120DIODE GEN PURP 1.2KV 95A DO203AB Vishay General Semiconductor - Diodes Division |
2,389 | - |
RFQ |
![]() Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 1200 V | 95A | -55°C ~ 180°C | 1.4 V @ 267 A | |
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VS-123NQ100PBFDIODE SCHOTTKY 100V 120A D-67 Vishay General Semiconductor - Diodes Division |
3,304 | - |
RFQ |
![]() Технические |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Chassis Mount | 2650pF @ 5V, 1MHz | - | 3 mA @ 100 V | 100 V | 120A | -55°C ~ 175°C | 910 mV @ 120 A | |
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BYW172G-TAPDIODE AVALANCHE 400V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,742 | - |
RFQ |
![]() Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 1 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1.5 V @ 9 A | |
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VS-6ESU06-M3/86ADIODE GEN PURP 600V 6A TO277A Vishay General Semiconductor - Diodes Division |
3,638 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 58 ns | 5 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 1.3 V @ 6 A |
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UF5400-E3/54DIODE GEN PURP 50V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,670 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 45pF @ 4V, 1MHz | 50 ns | 10 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
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VS-95PFR120DIODE GEN PURP 1.2KV 95A DO203AB Vishay General Semiconductor - Diodes Division |
2,090 | - |
RFQ |
![]() Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1200 V | 95A | -55°C ~ 180°C | 1.4 V @ 267 A | |
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VS-80PF120WDIODE GEN PURP 1.2KV 80A DO203AB Vishay General Semiconductor - Diodes Division |
2,862 | - |
RFQ |
![]() Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | 1200 V | 80A | -55°C ~ 180°C | 1.4 V @ 220 A | |
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BYV98-150-TRDIODE AVALANCHE 150V 4A SOD64 Vishay General Semiconductor - Diodes Division |
3,954 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 35 ns | 10 µA @ 150 V | 150 V | 4A | -55°C ~ 175°C | 1.1 V @ 5 A | |
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VS-60APF02-M3DIODE GEN PURP 200V 60A TO247AC Vishay General Semiconductor - Diodes Division |
2,768 | - |
RFQ |
![]() Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 180 ns | 100 µA @ 200 V | 200 V | 60A | -40°C ~ 150°C | 1.3 V @ 60 A | |
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VS-80PFR120WDIODE GEN PURP 1.2KV 80A DO203AB Vishay General Semiconductor - Diodes Division |
3,063 | - |
RFQ |
![]() Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | - | 1200 V | 80A | -55°C ~ 180°C | 1.4 V @ 220 A | |
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SBLF10L25-E3/45DIODE SCHOTTKY 25V 10A ITO220AC Vishay General Semiconductor - Diodes Division |
3,866 | - |
RFQ |
![]() Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 800 µA @ 25 V | 25 V | 10A | -65°C ~ 150°C | 460 mV @ 10 A | |
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VS-60APF06-M3DIODE GEN PURP 600V 60A TO247AC Vishay General Semiconductor - Diodes Division |
3,878 | - |
RFQ |
![]() Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 180 ns | 100 µA @ 600 V | 600 V | 60A | -40°C ~ 150°C | 1.3 V @ 60 A | |
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FESF8ATHE3_A/PDIODE GEN PURP 50V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,942 | - |
RFQ |
![]() Технические |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 50 V | 50 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A |
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VS-60APF10-M3DIODE GEN PURP 1KV 60A TO247AC Vishay General Semiconductor - Diodes Division |
3,361 | - |
RFQ |
![]() Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 480 ns | 100 µA @ 1000 V | 1000 V | 60A | -40°C ~ 150°C | 1.4 V @ 60 A | |
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FESF8BTHE3_A/PDIODE GEN PURP 100V 8A ITO220AC Vishay General Semiconductor - Diodes Division |
2,776 | - |
RFQ |
![]() Технические |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 100 V | 100 V | 8A | -55°C ~ 150°C | 950 mV @ 8 A |
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SS33-E3/57TDIODE SCHOTTKY 30V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,447 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | |
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MURS360-E3/9ATDIODE GEN PURP 600V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,981 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 10 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1.25 V @ 3 A |