Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-MBRB1035TRLHM3SCHOTTKY - D2PAK Vishay General Semiconductor - Diodes Division |
3,061 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 600pF @ 5V, 1MHz | - | 100 µA @ 35 V | 35 V | 10A | -55°C ~ 150°C | 840 mV @ 20 A |
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BAS85-GS18DIODE SCHOTTKY 30V 200MA SOD80 Vishay General Semiconductor - Diodes Division |
3,935 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA | 125°C (Max) | 800 mV @ 100 mA |
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BAS170WS-E3-18DIODE SCHOTTKY 70V 70MA SOD323 Vishay General Semiconductor - Diodes Division |
3,677 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | - | 10 µA @ 70 V | 70 V | 70mA | -55°C ~ 125°C | 1 V @ 15 mA | |
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BAT43W-G3-18DIODE SCHOTTKY 30V 200MA SOD123 Vishay General Semiconductor - Diodes Division |
2,438 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 7pF @ 1V, 1MHz | 5 ns | 500 nA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 450 mV @ 15 mA | |
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VS-20TQ040STRLHM3SCHOTTKY - D2PAK Vishay General Semiconductor - Diodes Division |
3,913 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.7 mA @ 40 V | 40 V | 20A | -55°C ~ 150°C | 570 mV @ 20 A |
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VS-25FR80MDIODE GEN PURP 800V 25A DO203AA Vishay General Semiconductor - Diodes Division |
3,594 | - |
RFQ |
![]() Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 800 V | 25A | -65°C ~ 175°C | 1.3 V @ 78 A | |
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VS-MBRB1035TRRHM3SCHOTTKY - D2PAK Vishay General Semiconductor - Diodes Division |
2,231 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 600pF @ 5V, 1MHz | - | 100 µA @ 35 V | 35 V | 10A | -55°C ~ 150°C | 840 mV @ 20 A |
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VS-87HF160DIODE GEN PURP 1.6KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,371 | - |
RFQ |
![]() Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 1600 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
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VS-20TQ045STRLHM3SCHOTTKY - D2PAK Vishay General Semiconductor - Diodes Division |
2,709 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.7 mA @ 45 V | 45 V | 20A | -55°C ~ 150°C | 570 mV @ 20 A |
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VS-6F100MDIODE GEN PURP 1KV 6A DO203AA Vishay General Semiconductor - Diodes Division |
2,050 | - |
RFQ |
![]() Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 1000 V | 6A | -65°C ~ 175°C | 1.1 V @ 19 A | |
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VS-10ETS08STRR-M3DIODE GEN PURP 800V 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,463 | - |
RFQ |
![]() Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 800 V | 800 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
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VS-20TQ035STRRHM3SCHOTTKY - D2PAK Vishay General Semiconductor - Diodes Division |
2,357 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.7 mA @ 35 V | 35 V | 20A | -55°C ~ 150°C | 570 mV @ 20 A |
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VS-87HFR160DIODE GEN PURP 1.6KV 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,938 | - |
RFQ |
![]() Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1600 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
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VS-6FR100MDIODE GEN PURP 1KV 6A DO203AA Vishay General Semiconductor - Diodes Division |
2,616 | - |
RFQ |
![]() Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1000 V | 6A | -65°C ~ 175°C | 1.1 V @ 19 A | |
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VS-10ETS10STRL-M3DIODE GEN PURP 1KV 10A D2PAK Vishay General Semiconductor - Diodes Division |
2,497 | - |
RFQ |
![]() Технические |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1000 V | 1000 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
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VS-20TQ035STRLHM3SCHOTTKY - D2PAK Vishay General Semiconductor - Diodes Division |
2,676 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1400pF @ 5V, 1MHz | - | 2.7 mA @ 35 V | 35 V | 20A | -55°C ~ 150°C | 570 mV @ 20 A |
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VS-6FR20MDIODE GEN PURP 1KV 6A DO203AA Vishay General Semiconductor - Diodes Division |
3,426 | - |
RFQ |
![]() Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1000 V | 6A | -65°C ~ 175°C | 1.1 V @ 19 A | |
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VS-85HFL80S05DIODE GEN PURP 800V 85A DO203AB Vishay General Semiconductor - Diodes Division |
3,457 | - |
RFQ |
![]() Технические |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 500 ns | 100 µA @ 800 V | 800 V | 85A | -40°C ~ 125°C | 1.75 V @ 266.9 A | |
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VS-10ETS10STRR-M3DIODE GEN PURP 1KV 10A D2PAK Vishay General Semiconductor - Diodes Division |
3,008 | - |
RFQ |
![]() Технические |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1000 V | 1000 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
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VS-16F120MDIODE GEN PURP 1.2KV 16A DO203AA Vishay General Semiconductor - Diodes Division |
3,550 | - |
RFQ |
![]() Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 29 ns | - | 1200 V | 16A | -65°C ~ 175°C | 1.23 V @ 50 A |