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Диоды - выпрямители - одиночные

Мфр. Часть #	Доступность	Цена	Количество	Технические	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
VS-HFA04SD60SR-M3 DIODE GEN PURP 600V 4A TO252 Vishay General Semiconductor - Diodes Division	3,991	-	RFQ	Технические	Tape & Reel (TR)	Automotive, AEC-Q101, FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	42 ns	3 µA @ 600 V	600 V	4A	-65°C ~ 175°C	1.8 V @ 4 A
VS-HFA04SD60STR-M3 DIODE GEN PURP 600V 4A D-PAK Vishay General Semiconductor - Diodes Division	3,479	-	RFQ	Технические	Tape & Reel (TR)	HEXFRED®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	42 ns	3 µA @ 600 V	600 V	4A	-55°C ~ 150°C	1.8 V @ 4 A
VS-1N1184A DIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division	3,603	-	RFQ	Технические	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	2.5 mA @ 100 V	100 V	40A	-65°C ~ 200°C	1.3 V @ 126 A
VS-1N1187A DIODE GEN PURP 300V 40A DO203AB Vishay General Semiconductor - Diodes Division	3,924	-	RFQ	Технические	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	2.5 mA @ 300 V	300 V	40A	-65°C ~ 200°C	1.3 V @ 126 A
VS-85HFLR80S05 DIODE GEN PURP 800V 85A DO203AB Vishay General Semiconductor - Diodes Division	3,782	-	RFQ	Технические	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	500 ns	100 µA @ 800 V	800 V	85A	-40°C ~ 125°C	1.75 V @ 266.9 A
VS-1N1184RA DIODE GEN PURP 100V 40A DO203AB Vishay General Semiconductor - Diodes Division	3,049	-	RFQ	Технические	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	2.5 mA @ 100 V	100 V	40A	-65°C ~ 200°C	1.3 V @ 126 A
VS-30ETH06S-M3 DIODE ULTRA FAST 600V 30A D2PAK Vishay General Semiconductor - Diodes Division	3,667	-	RFQ	Технические	Tube	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	35 ns	50 µA @ 600 V	600 V	30A	-65°C ~ 175°C	2.6 V @ 30 A
BAT54W-G3-08 DIODE SCHOTTKY 30V 200MA SOD123 Vishay General Semiconductor - Diodes Division	2,580	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)		RoHS	Small Signal =< 200mA (Io), Any Speed	Schottky	Active	Surface Mount	10pF @ 1V, 1MHz	5 ns	2 µA @ 25 V	30 V	200mA (DC)	125°C (Max)	800 mV @ 100 mA
S1B-E3/61T DIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division	3,303	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	12pF @ 4V, 1MHz	1.8 µs	1 µA @ 100 V	100 V	1A	-55°C ~ 150°C	1.1 V @ 1 A
VF30120SG-E3/4W DIODE SCHOTTKY 120V 30A ITO220AB Vishay General Semiconductor - Diodes Division	2,656	-	RFQ	Технические	Tube	TMBS®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	500 µA @ 120 V	120 V	30A	-40°C ~ 150°C	1.28 V @ 30 A
VS-40HFL80S05 DIODE GEN PURP 800V 40A DO203AB Vishay General Semiconductor - Diodes Division	2,302	-	RFQ	Технические	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	500 ns	100 µA @ 800 V	800 V	40A	-40°C ~ 125°C	1.95 V @ 40 A
FESB16AT-E3/45 DIODE GEN PURP 50V 16A TO263AB Vishay General Semiconductor - Diodes Division	2,688	-	RFQ	Технические	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	175pF @ 4V, 1MHz	35 ns	10 µA @ 50 V	50 V	16A	-65°C ~ 150°C	975 mV @ 16 A
VS-40HFLR80S05 DIODE GEN PURP 800V 40A DO203AB Vishay General Semiconductor - Diodes Division	3,166	-	RFQ	Технические	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	500 ns	100 µA @ 800 V	800 V	40A	-40°C ~ 125°C	1.95 V @ 40 A
VS-41HF40 DIODE GEN PURP 400V 40A DO203AB Vishay General Semiconductor - Diodes Division	3,768	-	RFQ	Технические	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	9 mA @ 400 V	400 V	40A	-65°C ~ 190°C	1.3 V @ 125 A
SA2M-E3/5AT DIODE GEN PURP 1KV 2A DO214AC Vishay General Semiconductor - Diodes Division	2,241	-	RFQ	Технические	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	11pF @ 4V, 1MHz	1.5 µs	3 µA @ 1000 V	1000 V	2A	-55°C ~ 150°C	1.1 V @ 2 A
FESB16BT-E3/45 DIODE GEN PURP 100V 16A TO263AB Vishay General Semiconductor - Diodes Division	2,991	-	RFQ	Технические	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	175pF @ 4V, 1MHz	35 ns	10 µA @ 100 V	100 V	16A	-65°C ~ 150°C	975 mV @ 16 A
VS-41HFR40 DIODE GEN PURP 400V 40A DO203AB Vishay General Semiconductor - Diodes Division	2,752	-	RFQ	Технические	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	9 mA @ 400 V	400 V	40A	-65°C ~ 190°C	1.3 V @ 125 A
FESB16CT-E3/45 DIODE GEN PURP 150V 16A TO263AB Vishay General Semiconductor - Diodes Division	2,258	-	RFQ	Технические	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	175pF @ 4V, 1MHz	35 ns	10 µA @ 150 V	150 V	16A	-65°C ~ 150°C	975 mV @ 16 A
VS-8EWF10STR-M3 DIODE GEN PURP 1KV 8A D-PAK Vishay General Semiconductor - Diodes Division	3,604	-	RFQ	Технические	Tape & Reel (TR)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	270 ns	100 µA @ 1000 V	1000 V	8A	-40°C ~ 150°C	1.3 V @ 8 A
VS-40HFL60S05 DIODE GEN PURP 600V 40A DO203AB Vishay General Semiconductor - Diodes Division	2,441	-	RFQ	Технические	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	500 ns	100 µA @ 600 V	600 V	40A	-40°C ~ 125°C	1.95 V @ 40 A