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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SE20AFJHM3/6BDIODE GEN PURP 600V 1.3A DO221AC Vishay General Semiconductor - Diodes Division |
3,024 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 600 V | 600 V | 1.3A (DC) | -55°C ~ 175°C | 1.1 V @ 2 A |
|
SD103AW-G3-18DIODE SCHOTTKY 350MA 40V SOD123 Vishay General Semiconductor - Diodes Division |
3,415 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | 10 ns | 5 µA @ 30 V | 40 V | 350mA (DC) | -55°C ~ 125°C | 600 mV @ 200 mA | |
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S1PD-M3/85ADIODE GEN PURP 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,001 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 6pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
SE20PGHM3/85ADIODE GEN PURP 400V 1.6A DO220AA Vishay General Semiconductor - Diodes Division |
3,759 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 13pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 400 V | 400 V | 1.6A | -55°C ~ 175°C | 1.05 V @ 2 A |
|
|
SE20AFDHM3/6ADIODE GEN PURP 200V 1.3A DO221AC Vishay General Semiconductor - Diodes Division |
3,041 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 200 V | 200 V | 1.3A (DC) | -55°C ~ 175°C | 1.1 V @ 2 A |
|
|
SD103BW-G3-18DIODE SCHOTTKY 350MA 30V SOD123 Vishay General Semiconductor - Diodes Division |
3,153 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | 10 ns | 5 µA @ 20 V | 30 V | 350mA (DC) | -55°C ~ 125°C | 600 mV @ 200 mA | |
|
|
S1PG-M3/85ADIODE GEN PURP 400V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,645 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 6pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
SE20AFGHM3/6ADIODE GEN PURP 400V 1.3A DO221AC Vishay General Semiconductor - Diodes Division |
3,153 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 400 V | 400 V | 1.3A (DC) | -55°C ~ 175°C | 1.1 V @ 2 A |
|
|
SD103CW-G3-18DIODE SCHOTTKY 350MA 20V SOD123 Vishay General Semiconductor - Diodes Division |
3,095 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | 10 ns | 5 µA @ 10 V | 20 V | 350mA (DC) | -55°C ~ 125°C | 600 mV @ 200 mA | |
|
|
S1PJ-M3/85ADIODE GEN PURP 600V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,017 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 6pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
SD101AWS-G3-08DIODE SCHOTTKY 150MW 60V SOD323 Vishay General Semiconductor - Diodes Division |
2,865 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | 1 ns | 200 nA @ 50 V | 60 V | 30mA (DC) | -55°C ~ 125°C | 1 V @ 15 mA | |
|
|
S1PK-M3/85ADIODE GEN PURP 800V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,300 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 6pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
BYM12-100-E3/97DIODE GEN PURP 100V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,906 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
SD101BWS-G3-08DIODE SCHOTTKY 150MW 50V SOD323 Vishay General Semiconductor - Diodes Division |
2,233 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | 1 ns | 200 nA @ 40 V | 50 V | 30mA (DC) | -55°C ~ 125°C | 1 V @ 15 mA | |
|
|
S1PM-M3/85ADIODE GEN PURP 1KV 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,893 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 6pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
BYM12-150-E3/97DIODE GEN PURP 150V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,765 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 150 V | 150 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
1N6478HE3/97DIODE GEN PURP 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,149 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
SSA24-E3/5ATDIODE SCHOTTKY 40V 2A DO214AC Vishay General Semiconductor - Diodes Division |
2,795 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 2A | -65°C ~ 150°C | 490 mV @ 2 A | |
|
|
SD101CWS-G3-08DIODE SCHOTTKY 150MW 40V SOD323 Vishay General Semiconductor - Diodes Division |
3,630 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 2pF @ 0V, 1MHz | 1 ns | 200 nA @ 30 V | 40 V | 30mA (DC) | -55°C ~ 125°C | 1 V @ 15 mA | |
|
|
BYM12-300-E3/97DIODE GEN PURP 300V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,930 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 14pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A |
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