Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BAT46-TAPDIODE SCHOTTKY 100V 150MA DO35 Vishay General Semiconductor - Diodes Division |
3,037 | - |
RFQ |
![]() Технические |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Through Hole | 6pF @ 1V, 1MHz | - | 5 µA @ 75 V | 100 V | 150mA (DC) | 125°C (Max) | 1 V @ 250 mA |
|
MPG06D-E3/100DIODE GEN PURP 200V 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,289 | - |
RFQ |
![]() Технические |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
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VS-80-1336PBFDIODE GENERAL PURPOSE TO220 Vishay General Semiconductor - Diodes Division |
2,292 | - |
RFQ |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
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VS-80-1338PBFDIODE GENERAL PURPOSE TO220 Vishay General Semiconductor - Diodes Division |
3,192 | - |
RFQ |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
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VS-80-1339PBFDIODE GENERAL PURPOSE TO220 Vishay General Semiconductor - Diodes Division |
2,016 | - |
RFQ |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
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VS-94-3163PBFDIODE GENERAL PURPOSE TO220 Vishay General Semiconductor - Diodes Division |
3,996 | - |
RFQ |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
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VS-95-0298PBFDIODE GENERAL PURPOSE TO220 Vishay General Semiconductor - Diodes Division |
3,133 | - |
RFQ |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
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VS-95-4685PBFDIODE GENERAL PURPOSE TO220 Vishay General Semiconductor - Diodes Division |
2,454 | - |
RFQ |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
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VS-95-4944PBFDIODE GENERAL PURPOSE TO220 Vishay General Semiconductor - Diodes Division |
3,859 | - |
RFQ |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
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BYG10MHE3_A/HDIODE AVALANCHE 1KV 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
3,962 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
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B120-M3/5ATDIODE SCHOTTKY 20V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,345 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 20 V | 20 V | 1A | -65°C ~ 150°C | 520 mV @ 1 A | |
|
MPG06DHE3_A/53DIODE GEN PURP 200V 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,154 | - |
RFQ |
![]() Технические |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
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BYG10MHE3_A/IDIODE AVALANCHE 1KV 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
3,323 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
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B130-M3/5ATDIODE SCHOTTKY 30V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,159 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 1A | -65°C ~ 150°C | 520 mV @ 1 A | |
|
MPG06G-E3/100DIODE GEN PURP 400V 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,657 | - |
RFQ |
![]() Технические |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
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SS22-M3/5BTDIODE SCHOTTKY 2A 20V DO-214AA Vishay General Semiconductor - Diodes Division |
3,059 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 20 V | 20 V | 2A | -60°C ~ 125°C | 500 mV @ 2 A | |
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B140-M3/5ATDIODE SCHOTTKY 40V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,212 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 40 V | 40 V | 1A | -65°C ~ 150°C | 520 mV @ 1 A | |
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SD103AWS-HG3-08DIODE SCHOTTKY 40V 350MA SOD323 Vishay General Semiconductor - Diodes Division |
3,426 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | 10 ns | 5 µA @ 30 V | 40 V | 350mA (DC) | 125°C (Max) | 600 mV @ 200 mA |
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SS23-M3/5BTDIODE SCHOTTKY 2A 30V DO-214AA Vishay General Semiconductor - Diodes Division |
3,198 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 30 V | 30 V | 2A | -65°C ~ 125°C | 500 mV @ 2 A | |
|
MPG06GHE3_A/53DIODE GEN PURP 400V 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,503 | - |
RFQ |
![]() Технические |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |