Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SS2H10HM3_A/H2A 100V HIGH BARRIER SKY REC SMB Vishay General Semiconductor - Diodes Division |
2,192 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 10 µA @ 100 V | 100 V | 2A | -65°C ~ 175°C | 790 mV @ 2 A |
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GL41GHE3/97DIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,200 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
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BYG10JHE3_A/HDIODE AVALANCHE 600V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
2,423 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
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BYG24GHE3_A/IDIODE AVALANCHE 400V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
3,517 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 140 ns | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.25 V @ 1.5 A |
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SS2H10HM3_A/I2A 100V HIGH BARRIER SKY REC SMB Vishay General Semiconductor - Diodes Division |
2,168 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 10 µA @ 100 V | 100 V | 2A | -65°C ~ 175°C | 790 mV @ 2 A |
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VS-95-9982PBFDIODE GENERAL PURPOSE TO220 Vishay General Semiconductor - Diodes Division |
3,227 | - |
RFQ |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
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VS-95-9989PBFDIODE GENERAL PURPOSE TO220 Vishay General Semiconductor - Diodes Division |
2,798 | - |
RFQ |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
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VS-96-1041PBFDIODE GENERAL PURPOSE TO220 Vishay General Semiconductor - Diodes Division |
2,382 | - |
RFQ |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
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GL41JHE3/97DIODE GEN PURP 600V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,774 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
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BYG10JHE3_A/IDIODE AVALANCHE 600V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
2,366 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
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BYG24JHE3_A/HDIODE AVALANCHE 600V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
2,508 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 140 ns | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.25 V @ 1.5 A |
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GL41KHE3/97DIODE GEN PURP 800V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,295 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
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BYG10KHE3_A/HDIODE AVALANCHE 800V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
2,277 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
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BYG24JHE3_A/IDIODE AVALANCHE 600V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
3,503 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 140 ns | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.25 V @ 1.5 A |
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US1A-M3/5ATDIODE GEN PURP 50V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,683 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 10 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 1 V @ 1 A | |
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BYG23T-M3/TR3DIODE AVALANCHE 1300V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,489 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 9pF @ 4V, 1MHz | 75 ns | 5 µA @ 1300 V | 1300 V | 1A (DC) | -55°C ~ 150°C | 1.9 V @ 1 A | |
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GL41MHE3/97DIODE GEN PURP 1KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,721 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
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BYG10KHE3_A/IDIODE AVALANCHE 800V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
3,139 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 800 V | 800 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
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SS2H10-M3/5BTDIODE SCHOTTKY 2A 100V DO-214AA Vishay General Semiconductor - Diodes Division |
2,533 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 10 µA @ 100 V | 100 V | 2A | -65°C ~ 175°C | 790 mV @ 2 A | ||
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US1B-M3/5ATDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,249 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 10 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |