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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
EGL41FHE3_A/HDIODE GEN PURP 300V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,964 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 14pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A |
|
SSB44-M3/52TDIODE SCHOTTKY 4A 40V DO214AA Vishay General Semiconductor - Diodes Division |
2,583 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 4A | -65°C ~ 150°C | 490 mV @ 4 A | ||
|
B350B-M3/52TDIODE SCHOTTKY 50V 3A DO214AA Vishay General Semiconductor - Diodes Division |
3,075 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 50 V | 50 V | 3A | -55°C ~ 150°C | 660 mV @ 3 A | |
|
|
EGL41GHE3_A/HDIODE GEN PURP 400V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,201 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 14pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A |
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|
ESH2PB-M3/85ADIODE GEN PURP 100V 2A DO220AA Vishay General Semiconductor - Diodes Division |
2,781 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 980 mV @ 2 A |
|
|
VS-95-9929PBFDIODE GENERAL PURPOSE TO220 Vishay General Semiconductor - Diodes Division |
3,547 | - |
RFQ |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
VS-95-9969PBFDIODE GENERAL PURPOSE TO220 Vishay General Semiconductor - Diodes Division |
3,270 | - |
RFQ |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
VS-95-9971PBFDIODE GENERAL PURPOSE TO220 Vishay General Semiconductor - Diodes Division |
2,290 | - |
RFQ |
Tube | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
B360B-M3/52TDIODE SCHOTTKY 60V 3A DO214AA Vishay General Semiconductor - Diodes Division |
2,905 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 660 mV @ 3 A | |
|
|
BYG10DHE3_A/HDIODE AVALANCHE 200V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
3,903 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
|
|
ESH2PC-M3/85ADIODE GEN PURP 150V 2A DO220AA Vishay General Semiconductor - Diodes Division |
2,799 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 25 ns | 1 µA @ 150 V | 150 V | 2A | -55°C ~ 175°C | 980 mV @ 2 A |
|
GL41AHE3/97DIODE GEN PURP 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,664 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
BYG10DHE3_A/IDIODE AVALANCHE 200V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
2,242 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
|
|
BYG24DHE3_A/HDIODE AVALANCHE 200V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
3,217 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 140 ns | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.25 V @ 1.5 A |
|
|
GL41BHE3/97DIODE GEN PURP 100V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,899 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
BYG10GHE3_A/HDIODE AVALANCHE 400V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
3,487 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
|
|
BYG24DHE3_A/IDIODE AVALANCHE 200V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
2,736 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 140 ns | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.25 V @ 1.5 A |
|
|
GL41DHE3/97DIODE GEN PURP 200V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,269 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
BYG10GHE3_A/IDIODE AVALANCHE 400V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
2,982 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
|
|
BYG24GHE3_A/HDIODE AVALANCHE 400V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
3,106 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 140 ns | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.25 V @ 1.5 A |
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