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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RGL41MHE3_A/HDIODE GEN PURP 1KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,607 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
RGL41MHE3_A/IDIODE GEN PURP 1KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,094 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
U2B-E3/5BTDIODE GEN PURP 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,146 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 27 ns | 10 µA @ 100 V | 100 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
|
S3GHM3_A/H3A 400V SMC STD GPP SM RECT Vishay General Semiconductor - Diodes Division |
2,162 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 4V, 1MHz | 2.5 µs | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.15 V @ 2.5 A |
|
|
U2C-E3/5BTDIODE GEN PURP 150V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,034 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 27 ns | 10 µA @ 150 V | 150 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
|
U2D-E3/5BTDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,574 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 27 ns | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
BYM12-150-E3/96DIODE GEN PURP 150V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,451 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 50 ns | 5 µA @ 150 V | 150 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
1N4933GP-E3/54DIODE GEN PURP 50V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,877 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 200 ns | 5 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
BYM12-300-E3/96DIODE GEN PURP 300V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,469 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 14pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 1A | -65°C ~ 175°C | 1.25 V @ 1 A |
|
|
1N4935GP-E3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,298 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 200 ns | 5 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
ESH1C-E3/61TDIODE GEN PURP 150V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,618 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 1 µA @ 150 V | 150 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A | |
|
|
1N4944GP-E3/54DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,925 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 150 ns | 1 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
US1J-M3/5ATDIODE GEN PURP 600V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,357 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 10 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
ESH1D-E3/61TDIODE GEN PURP 200V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,977 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 25 ns | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 175°C | 900 mV @ 1 A | |
|
|
1N4946GP-E3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,858 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 1 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
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SS3P4HM3J/84ADIODE SCHOTTKY 3A 40V DO-220AA Vishay General Semiconductor - Diodes Division |
3,215 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 150 µA @ 40 V | 40 V | 3A | -55°C ~ 150°C | 600 mV @ 3 A |
|
|
US1K-M3/5ATDIODE GEN PURP 800V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,001 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 10 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
SB230-E3/54DIODE SCHOTTKY 30V 2A DO204AC Vishay General Semiconductor - Diodes Division |
3,791 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 30 V | 30 V | 2A | -65°C ~ 125°C | 500 mV @ 2 A | |
|
|
BA158GP-E3/54DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,877 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
VS-10BQ015HM3/5BTDIODE SCHOTTKY 15V 1A DO214AA Vishay General Semiconductor - Diodes Division |
2,015 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 390pF @ 5V, 1MHz | - | 500 µA @ 15 V | 15 V | 1A | -55°C ~ 125°C | 330 mV @ 1 A |
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