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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SX110S040S6OUDIODE SCHOTTKY 40V Vishay General Semiconductor - Diodes Division |
3,860 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | |
|
BYWE29-150-E3/45DIODE GEN PURP 150V TO220AC Vishay General Semiconductor - Diodes Division |
2,939 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 45pF @ 4V, 1MHz | 25 ns | 10 µA @ 150 V | 150 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
|
RMPG06BHE3_A/54DIODE GEN PURP 100V 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,403 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
BYG23MHE3_A/HDIODE AVALANCHE 1KV 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
2,794 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 5 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
BYG24GHM3_A/HDIODE AVALANCHE 400V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
3,761 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 140 ns | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.25 V @ 1.5 A |
|
|
RMPG06DHE3_A/54DIODE GEN PURP 200V 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,864 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
BYG23MHE3_A/IDIODE AVALANCHE 1KV 1.5A DO214AC Vishay General Semiconductor - Diodes Division |
3,842 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 75 ns | 5 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
|
BYG24GHM3_A/IDIODE AVALANCHE 400V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
2,620 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 140 ns | 1 µA @ 400 V | 400 V | 1.5A | -55°C ~ 150°C | 1.25 V @ 1.5 A |
|
|
RMPG06GHE3_A/54DIODE GEN PURP 400V 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,277 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
SS25-M3/5BTDIODE SCHOTTKY 2A 50V DO-214AA Vishay General Semiconductor - Diodes Division |
2,391 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 50 V | 50 V | 2A | -65°C ~ 150°C | 700 mV @ 2 A | |
|
|
BYG24JHM3_A/HDIODE AVALANCHE 600V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
2,125 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 140 ns | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.25 V @ 1.5 A |
|
|
RMPG06KHE3_A/54DIODE GEN PURP 800V 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,618 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 6.6pF @ 4V, 1MHz | 250 ns | 5 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A |
|
|
SS26-M3/5BTDIODE SCHOTTKY 2A 60V DO-214AA Vishay General Semiconductor - Diodes Division |
3,934 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 60 V | 60 V | 2A | -65°C ~ 150°C | 700 mV @ 2 A | |
|
|
BYG24JHM3_A/IDIODE AVALANCHE 600V 1.5A DO214 Vishay General Semiconductor - Diodes Division |
2,815 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 140 ns | 1 µA @ 600 V | 600 V | 1.5A | -55°C ~ 150°C | 1.25 V @ 1.5 A |
|
|
BYWE29-50-E3/45DIODE GEN PURP 50V TO220AC Vishay General Semiconductor - Diodes Division |
2,007 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 45pF @ 4V, 1MHz | 25 ns | 10 µA @ 50 V | 50 V | 8A | -65°C ~ 150°C | 1.3 V @ 20 A | |
|
VSSAF56-M3/6BDIODE SCHOTTKY 60V 5A DO221AC Vishay General Semiconductor - Diodes Division |
2,913 | - |
RFQ |
Технические |
Tape & Reel (TR) | TMBS®, SlimSMA™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 540pF @ 4V, 1MHz | - | 400 µA @ 60 V | 60 V | 5A (DC) | -40°C ~ 150°C | 620 mV @ 5 A |
|
|
RGL41KHE3_A/HDIODE GEN PURP 800V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,108 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
RGL41KHE3_A/IDIODE GEN PURP 800V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,195 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 500 ns | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
B340A-M3/5ATDIODE SCHOTTKY 40V 3A DO214AC Vishay General Semiconductor - Diodes Division |
2,623 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -65°C ~ 150°C | 550 mV @ 3 A | |
|
UF4006-M3/54DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,362 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 17pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
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