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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GP15A-E3/54DIODE GEN PURP 50V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
2,931 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 3.5 µs | 5 µA @ 50 V | 50 V | 1.5A | -65°C ~ 175°C | 1.1 V @ 1.5 A |
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AR1PMHM3/84ADIODE AVALANCHE 1000V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,627 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 8.5pF @ 4V, 1MHz | 120 ns | 1 µA @ 1000 V | 1000 V | 1A | -55°C ~ 175°C | 1.6 V @ 1 A |
|
SS3H9-M3/57TDIODE SCHOTTKY 3A 90V DO-214AB Vishay General Semiconductor - Diodes Division |
2,281 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 20 µA @ 90 V | 90 V | 3A | -65°C ~ 175°C | 800 mV @ 3 A | |
|
|
GP15B-E3/54DIODE GEN PURP 100V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
3,360 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 3.5 µs | 5 µA @ 100 V | 100 V | 1.5A | -65°C ~ 175°C | 1.1 V @ 1.5 A |
|
|
AR1PMHM3/85ADIODE AVALANCHE 1000V 1A DO220AA Vishay General Semiconductor - Diodes Division |
2,099 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 8.5pF @ 4V, 1MHz | 120 ns | 1 µA @ 1000 V | 1000 V | 1A | -55°C ~ 175°C | 1.6 V @ 1 A |
|
|
1N5060GP-E3/54DIODE GEN PURP 400V 1A DO204AC Vishay General Semiconductor - Diodes Division |
2,378 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
|
SS32-M3/9ATDIODE SCHOTTKY 3A 20V DO-214AB Vishay General Semiconductor - Diodes Division |
2,378 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | |
|
|
1N4384GP-E3/54DIODE GEN PURP 400V 1A DO204AC Vishay General Semiconductor - Diodes Division |
2,291 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
VSSA36S-M3/61TDIODE SCHOTTKY 60V 2.4A DO214AC Vishay General Semiconductor - Diodes Division |
2,490 | - |
RFQ |
Технические |
Tape & Reel (TR) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 245pF @ 4V, 1MHz | - | 900 µA @ 60 V | 60 V | 2.4A | -55°C ~ 150°C | 630 mV @ 3 A |
|
|
SS33-M3/9ATDIODE SCHOTTKY 3A 30V DO-214AB Vishay General Semiconductor - Diodes Division |
3,577 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | |
|
|
ESH3B-M3/9ATDIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,415 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 70pF @ 4V, 1MHz | 40 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A | |
|
|
1N4585GP-E3/54DIODE GEN PURP 800V 1A DO204AC Vishay General Semiconductor - Diodes Division |
3,306 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1 V @ 1 A |
|
|
SS34-M3/9ATDIODE SCHOTTKY 3A 40V DO-214AB Vishay General Semiconductor - Diodes Division |
2,737 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | |
|
|
ESH3C-M3/9ATDIODE GEN PURP 150V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,293 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 70pF @ 4V, 1MHz | 40 ns | 5 µA @ 150 V | 150 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A | |
|
|
RGP15A-E3/54DIODE GEN PURP 50V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
3,386 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 5 µA @ 50 V | 50 V | 1.5A | -65°C ~ 175°C | 1.3 V @ 1.5 A |
|
|
SS32-M3/57TDIODE SCHOTTKY 3A 20V DO-214AB Vishay General Semiconductor - Diodes Division |
2,173 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | |
|
|
ESH3D-M3/9ATDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,706 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 70pF @ 4V, 1MHz | 40 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A | |
|
|
RGP15D-E3/54DIODE GEN PURP 200V 1.5A DO204AC Vishay General Semiconductor - Diodes Division |
3,661 | - |
RFQ |
Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 5 µA @ 200 V | 200 V | 1.5A | -65°C ~ 175°C | 1.3 V @ 1.5 A |
|
|
SS33-M3/57TDIODE SCHOTTKY 3A 30V DO-214AB Vishay General Semiconductor - Diodes Division |
3,489 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | |
|
|
ESH3B-M3/57TDIODE GEN PURP 100V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,460 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 70pF @ 4V, 1MHz | 40 ns | 5 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 900 mV @ 3 A |
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