Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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GL41MHE3/96DIODE GEN PURP 1KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,726 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
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GL41THE3/96DIODE GEN PURP 1.3KV 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,542 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 1300 V | 1300 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
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MPG06M-M3/73DIODE GEN PURP 1KV 1A MPG06 Vishay General Semiconductor - Diodes Division |
2,372 | - |
RFQ |
![]() Технические |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A | |
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S1PJHM3J/84ADIODE GPP 1A 600V DO-220AA Vishay General Semiconductor - Diodes Division |
3,277 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 6pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
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SBYV28-150-E3/73DIODE GEN PURP 150V 3.5A DO201AD Vishay General Semiconductor - Diodes Division |
3,940 | - |
RFQ |
![]() Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 20 ns | 5 µA @ 150 V | 150 V | 3.5A | -55°C ~ 150°C | 1.1 V @ 3.5 A | |
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B230LA-M3/5ATDIODE SCHOTTKY 30V 2A DO214AC Vishay General Semiconductor - Diodes Division |
2,323 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 2A | -65°C ~ 150°C | 500 mV @ 2 A | |
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SBYV28-50-E3/73DIODE GEN PURP 50V 3.5A DO201AD Vishay General Semiconductor - Diodes Division |
2,541 | - |
RFQ |
![]() Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 20 ns | 5 µA @ 50 V | 50 V | 3.5A | -55°C ~ 150°C | 1.1 V @ 3.5 A | |
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SS8P2L-M3/87ADIODE SCHOTTKY 20V 8A TO277A Vishay General Semiconductor - Diodes Division |
3,051 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 330pF @ 4V, 1MHz | - | 200 µA @ 30 V | 20 V | 8A | -55°C ~ 150°C | 570 mV @ 8 A |
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B230LA-M3/61TDIODE SCHOTTKY 30V 2A DO214AC Vishay General Semiconductor - Diodes Division |
3,360 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 2A | -65°C ~ 150°C | 500 mV @ 2 A | |
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UG4A-E3/73DIODE GEN PURP 50V 4A DO201AD Vishay General Semiconductor - Diodes Division |
3,492 | - |
RFQ |
![]() Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 50 V | 50 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A | |
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BY520-14E-E3/54DIODE GEN PURP 1.4KV 500MA DO204 Vishay General Semiconductor - Diodes Division |
3,987 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 1400 V | 500mA | -65°C ~ 175°C | - | |
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VSSA3L6S-M3/5ATDIODE SCHOTTKY 60V 2.5A DO214AC Vishay General Semiconductor - Diodes Division |
2,659 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 395pF @ 4V, 1MHz | - | 1.5 mA @ 60 V | 60 V | 2.5A | -55°C ~ 150°C | 580 mV @ 3 A |
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UG4B-E3/73DIODE GEN PURP 100V 4A DO201AD Vishay General Semiconductor - Diodes Division |
3,333 | - |
RFQ |
![]() Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 100 V | 100 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A | |
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RGP02-17E-E3/54DIODE GEN PURP 1.7KV 500MA DO204 Vishay General Semiconductor - Diodes Division |
3,162 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 300 ns | 5 µA @ 1700 V | 1700 V | 500mA | -65°C ~ 175°C | 1.8 V @ 100 mA |
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VSSA3L6S-M3/61TDIODE SCHOTTKY 60V 2.5A DO214AC Vishay General Semiconductor - Diodes Division |
3,472 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 395pF @ 4V, 1MHz | - | 1.5 mA @ 60 V | 60 V | 2.5A | -55°C ~ 150°C | 580 mV @ 3 A |
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UG4C-E3/73DIODE GEN PURP 150V 4A DO201AD Vishay General Semiconductor - Diodes Division |
3,874 | - |
RFQ |
![]() Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 20pF @ 4V, 1MHz | 30 ns | 5 µA @ 150 V | 150 V | 4A | -55°C ~ 150°C | 950 mV @ 4 A | |
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MURS320-M3/9ATDIODE GEN PURP 200V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,150 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 875 mV @ 3 A | |
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MURS340-M3/9ATDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,887 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 10 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1.25 V @ 3 A | |
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VSSAF5L45HM3_A/HDIODE SCHOTTKY 45V 5A DO221AC Vishay General Semiconductor - Diodes Division |
2,985 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, TMBS®, SlimSMA™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 740pF @ 4V, 1MHz | - | 650 µA @ 45 V | 45 V | 5A (DC) | -40°C ~ 150°C | 560 mV @ 5 A |
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B240A-M3/5ATDIODE SCHOTTKY 40V 2A DO214AC Vishay General Semiconductor - Diodes Division |
3,026 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 2A | -65°C ~ 150°C | 550 mV @ 2 A |