Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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BYM07-100HE3_A/HDIODE GEN PURP 100V 500MA DO213 Vishay General Semiconductor - Diodes Division |
2,767 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 500mA | -65°C ~ 175°C | 1.25 V @ 500 mA |
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BYM07-150HE3_A/HDIODE GEN PURP 150V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,529 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 150 V | 150 V | 500mA | -65°C ~ 175°C | 1.25 V @ 500 mA |
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SE60PWDCHM3/I6A 200V SLIMDPAK DUAL STD RECT Vishay General Semiconductor - Diodes Division |
2,665 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 22pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A |
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BYM07-200HE3_A/HDIODE GEN PURP 200V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,933 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 500mA | -65°C ~ 175°C | 1.25 V @ 500 mA |
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SE60PWJCHM3/I6A 600V SLIMDPAK DUAL STD RECT Vishay General Semiconductor - Diodes Division |
2,643 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 22pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A |
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BYM07-300HE3_A/HDIODE GEN PURP 300V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,639 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 500mA | -65°C ~ 175°C | 1.35 V @ 500 mA |
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UF5405-E3/54DIODE GEN PURP 500V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,263 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 36pF @ 4V, 1MHz | 75 ns | 10 µA @ 500 V | 500 V | 3A | -55°C ~ 150°C | 1.7 V @ 3 A | |
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VSSAF3N50-M3/6BDIODE SCHOTTKY 50V 2.7A DO221AC Vishay General Semiconductor - Diodes Division |
3,214 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | TMBS®, SlimSMA™ | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 570pF @ 4V, 1MHz | - | 1 mA @ 50 V | 50 V | 2.7A (DC) | -40°C ~ 150°C | 400 mV @ 1.5 A |
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SE60PWGCHM3/I6A 400V SLIMDPAK DUAL STD RECT Vishay General Semiconductor - Diodes Division |
2,691 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 22pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A |
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BYM07-400HE3_A/HDIODE GEN PURP 400V 500MA DO213 Vishay General Semiconductor - Diodes Division |
2,855 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 500mA | -65°C ~ 175°C | 1.35 V @ 500 mA |
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SE60PWBCHM3/I6A 100V SLIMDPAK DUAL STD RECT Vishay General Semiconductor - Diodes Division |
2,794 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 22pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 100 V | 100 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A |
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BYM07-50HE3_A/HDIODE GEN PURP 50V 500MA DO213AA Vishay General Semiconductor - Diodes Division |
3,091 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 500mA | -65°C ~ 175°C | 1.25 V @ 500 mA |
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EGL34AHE3_A/HDIODE GEN PURP 50V 500MA DO213AA Vishay General Semiconductor - Diodes Division |
3,298 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 50 V | 50 V | 500mA | -65°C ~ 175°C | 1.25 V @ 500 mA |
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MUR440-M3/73DIODE GEN PURP 400V 4A DO201AD Vishay General Semiconductor - Diodes Division |
3,090 | - |
RFQ |
![]() Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 10 µA @ 400 V | 400 V | 4A | -65°C ~ 175°C | 1.28 V @ 4 A | |
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AS3PK-M3/87ADIODE AVALANCHE 800V 2.1A TO277A Vishay General Semiconductor - Diodes Division |
3,895 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 800 V | 800 V | 2.1A (DC) | -55°C ~ 175°C | 920 mV @ 1.5 A |
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MURS460-M3/H4A 600V 50NS FSMC UF RECT SMD Vishay General Semiconductor - Diodes Division |
3,935 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 10 µA @ 600 V | 600 V | 2.4A | -55°C ~ 175°C | 1.25 V @ 3 A | |
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EGL34BHE3_A/HDIODE GEN PURP 100V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,989 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 100 V | 100 V | 500mA | -65°C ~ 175°C | 1.25 V @ 500 mA |
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BY527TAPDIODE AVALANCHE 800V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,142 | - |
RFQ |
![]() Технические |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 16pF @ 4V, 1MHz | 4 µs | 1 µA @ 800 V | 800 V | 2A | -55°C ~ 175°C | 1.65 V @ 10 A | |
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AS3PM-M3/87ADIODE AVALANCHE 1KV 2.1A TO277 Vishay General Semiconductor - Diodes Division |
2,219 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 1000 V | 1000 V | 2.1A (DC) | -55°C ~ 175°C | 920 mV @ 1.5 A |
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MURS460-M3/I4A 600V 50NS FSMC UF RECT SMD Vishay General Semiconductor - Diodes Division |
3,227 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 10 µA @ 600 V | 600 V | 2.4A | -55°C ~ 175°C | 1.25 V @ 3 A |