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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SE30AFDHM3/6ADIODE GEN PURP 200V 1.4A DO221AC Vishay General Semiconductor - Diodes Division |
3,946 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 19pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 200 V | 200 V | 1.4A (DC) | -55°C ~ 175°C | 1.1 V @ 3 A |
|
SE40PWGCHM3/I4A 400V SLIMDPAK DUAL STD RECT Vishay General Semiconductor - Diodes Division |
3,265 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 14pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 400 V | 400 V | 2A | -55°C ~ 175°C | 1.1 V @ 2 A |
|
V8P10HM3_A/IDIODE SCHOTTKY 100V 8A TO277A Vishay General Semiconductor - Diodes Division |
3,010 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 70 µA @ 100 V | 100 V | 8A | -40°C ~ 150°C | 680 mV @ 8 A |
|
MPG06GHE3_A/100DIODE GEN PURP 400V 1A MPG06 Vishay General Semiconductor - Diodes Division |
3,252 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 10pF @ 4V, 1MHz | 600 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
|
SE40PWDCHM3/I4A 200V SLIMDPAK DUAL STD RECT Vishay General Semiconductor - Diodes Division |
2,364 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 14pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 1.1 V @ 2 A |
|
MURS340-E3/9ATDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,880 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 10 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1.25 V @ 3 A | |
|
|
SE30AFJHM3J/6ADIODE GEN PURP 600V 1.4A DO221AC Vishay General Semiconductor - Diodes Division |
3,307 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 19pF @ 4V, 1MHz | 1.5 µs | 10 µA @ 600 V | 600 V | 1.4A (DC) | -55°C ~ 175°C | 1.1 V @ 3 A |
|
|
MURS360HE3_A/IDIODE GEN PURP 600V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,109 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 10 µA @ 3 V | 600 V | 3A | -65°C ~ 175°C | 1.28 V @ 4 A |
|
|
SS3H9HE3_B/HDIODE SCHOTTKY 90V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,137 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q100 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 20 µA @ 90 V | 90 V | 3A | -65°C ~ 175°C | 800 mV @ 3 A |
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|
SS3P3HM3J/84ADIODE SCHOTTKY 3A 30V DO-220AA Vishay General Semiconductor - Diodes Division |
2,601 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 130pF @ 4V, 1MHz | - | 200 µA @ 30 V | 30 V | 3A | -55°C ~ 150°C | 580 mV @ 3 A |
|
|
AS1PD-M3/85ADIODE AVALANCHE 200V 1.5A DO220 Vishay General Semiconductor - Diodes Division |
3,028 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 200 V | 200 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
|
1N4004GPE-E3/91DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,367 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 8pF @ 4V, 1MHz | 2 µs | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
P600M-E3/73DIODE GEN PURP 1KV 6A P600 Vishay General Semiconductor - Diodes Division |
3,988 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 1000 V | 1000 V | 6A | -50°C ~ 150°C | 1 V @ 6 A | |
|
EGF1THE3/5CADIODE GEN PURP 1.3KV 1A DO214BA Vishay General Semiconductor - Diodes Division |
2,422 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 75 ns | 5 µA @ 1300 V | 1300 V | 1A | -55°C ~ 150°C | 3 V @ 1 A |
|
|
EGF1THE3/67ADIODE GEN PURP 1.3KV 1A DO214BA Vishay General Semiconductor - Diodes Division |
2,205 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 75 ns | 5 µA @ 1300 V | 1300 V | 1A | -55°C ~ 150°C | 3 V @ 1 A |
|
BYT51M-TAPDIODE AVALANCHE 1KV 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
3,913 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
|
AS1PG-M3/85ADIODE AVALANCHE 400V 1.5A DO220 Vishay General Semiconductor - Diodes Division |
3,289 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 400 V | 400 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
|
|
BYT52K-TAPDIODE AVALANCHE 800V 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
3,681 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 800 V | 800 V | 1.4A | -55°C ~ 175°C | 1.3 V @ 1 A | |
|
|
AS1PJ-M3/85ADIODE AVALANCHE 600V 1.5A DO220 Vishay General Semiconductor - Diodes Division |
3,266 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 10.4pF @ 4V, 1MHz | 1.5 µs | 5 µA @ 600 V | 600 V | 1.5A (DC) | -55°C ~ 175°C | 1.15 V @ 1.5 A |
|
|
BYT53D-TAPDIODE AVALANCHE 200V 1.9A SOD57 Vishay General Semiconductor - Diodes Division |
2,759 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 50 ns | 5 µA @ 200 V | 200 V | 1.9A | -55°C ~ 175°C | 1.1 V @ 1 A |
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