Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
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ES3F-M3/9ATDIODE GEN PURP 300V 3A DO214AB Vishay General Semiconductor - Diodes Division |
3,330 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
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VS-6TQ040-M3DIODE SCHOTTKY 40V 6A TO220AC Vishay General Semiconductor - Diodes Division |
2,381 | - |
RFQ |
![]() Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 400pF @ 5V, 1MHz | - | 800 µA @ 40 V | 40 V | 6A | -55°C ~ 175°C | 730 mV @ 12 A | |
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AS3PMHM3_A/HDIODE AVALANCH 1KV 2.1A TO277A Vishay General Semiconductor - Diodes Division |
2,434 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 1000 V | 1000 V | 2.1A | -55°C ~ 175°C | 1.1 V @ 3 A |
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ES3G-M3/9ATDIODE GEN PURP 400V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,806 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 30pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1.1 V @ 3 A | |
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V20PWM10HM3/IDIODE SCHOTTKY 100V 20A SLIMDPAK Vishay General Semiconductor - Diodes Division |
2,236 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1575pF @ 4V, 1MHz | - | 200 µA @ 100 V | 100 V | 20A | -40°C ~ 175°C | 900 mV @ 20 A |
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VS-MBR735-M3DIODE SCHOTTKY 35V 7.5A TO220AC Vishay General Semiconductor - Diodes Division |
2,768 | - |
RFQ |
![]() Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 400pF @ 5V, 1MHz | - | 100 µA @ 35 V | 35 V | 7.5A | -65°C ~ 150°C | 840 mV @ 15 A | |
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AS3PMHM3_A/IDIODE AVALANCH 1KV 2.1A TO277A Vishay General Semiconductor - Diodes Division |
2,794 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 1000 V | 1000 V | 2.1A | -55°C ~ 175°C | 1.1 V @ 3 A |
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V20PWM12HM3/IDIODE SCHOTTKY 120V 20A SLIMDPAK Vishay General Semiconductor - Diodes Division |
2,180 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 1350pF @ 4V, 1MHz | - | 500 µA @ 120 V | 120 V | 20A | -40°C ~ 175°C | 1.02 V @ 20 A |
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V20PWM15HM3/IDIODE SCHOTTKY 150V 20A SLIMDPAK Vishay General Semiconductor - Diodes Division |
3,478 | - |
RFQ |
![]() Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 950pF @ 4V, 1MHz | - | 250 µA @ 150 V | 150 V | 20A | -40°C ~ 175°C | 1.47 V @ 20 A |
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SL44HM3_A/H4A 40V SM SCHOTTKY RECT SMC Vishay General Semiconductor - Diodes Division |
3,859 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 8A | -55°C ~ 125°C | 500 mV @ 8 A |
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V20PL50-M3/86ADIODE SCHOTTKY 50V 5.5A TO277A Vishay General Semiconductor - Diodes Division |
2,736 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 3 mA @ 50 V | 50 V | 5.5A | -40°C ~ 150°C | 590 mV @ 20 A |
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SL44HM3_A/I4A 40V SM SCHOTTKY RECT SMC Vishay General Semiconductor - Diodes Division |
2,793 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 8A | -55°C ~ 125°C | 500 mV @ 8 A |
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VS-4EWH02FNTRL-M3DIODE GEN PURP 200V 4A D-PAK Vishay General Semiconductor - Diodes Division |
2,392 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 20 ns | 3 µA @ 200 V | 200 V | 4A | -65°C ~ 175°C | 950 mV @ 4 A |
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V20PL50-M3/87ADIODE SCHOTTKY 50V 5.5A TO277A Vishay General Semiconductor - Diodes Division |
2,313 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 3 mA @ 50 V | 50 V | 5.5A | -40°C ~ 150°C | 590 mV @ 20 A |
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VS-4EWH02FNTRR-M3DIODE GEN PURP 200V 4A D-PAK Vishay General Semiconductor - Diodes Division |
2,428 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 20 ns | 3 µA @ 200 V | 200 V | 4A | -65°C ~ 175°C | 950 mV @ 4 A |
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VF30120SG-M3/4WDIODE SCHOTTKY 30A 120V ITO220AB Vishay General Semiconductor - Diodes Division |
3,717 | - |
RFQ |
![]() Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 120 V | 120 V | 30A | -40°C ~ 150°C | 1.28 V @ 30 A | |
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GI250-1-E3/54DIODE GEN PURP 1KV 250MA DO204 Vishay General Semiconductor - Diodes Division |
3,528 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 3pF @ 4V, 1MHz | 2 µs | 5 µA @ 1000 V | 1000 V | 250mA | -65°C ~ 175°C | 3.5 V @ 250 mA |
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VS-ETU1506-M3DIODE GEN PURP 600V 15A TO220-2 Vishay General Semiconductor - Diodes Division |
3,984 | - |
RFQ |
![]() Технические |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 15 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.9 V @ 15 A |
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1N4007E-E3/53DIODE GEN PURP 1KV 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,201 | - |
RFQ |
![]() Технические |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 2 µs | 5 µA @ 1000 V | 1000 V | 1A | -50°C ~ 150°C | 1.1 V @ 1 A | |
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GI250-3-E3/54DIODE GEN PURP 3KV 250MA DO204 Vishay General Semiconductor - Diodes Division |
3,158 | - |
RFQ |
![]() Технические |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 3pF @ 4V, 1MHz | 2 µs | 5 µA @ 3000 V | 3000 V | 250mA | -65°C ~ 175°C | 3.5 V @ 250 mA |