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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ES2AHM3/5BTDIODE GEN PURP 50V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,181 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 18pF @ 4V, 1MHz | 30 ns | 10 µA @ 50 V | 50 V | 2A | -55°C ~ 150°C | 900 mV @ 2 A | |
|
SS15P3S-M3/87ADIODE SCHOTTKY 30V 15A TO277A Vishay General Semiconductor - Diodes Division |
3,865 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1 mA @ 30 V | 30 V | 15A | 200°C (Max) | 570 mV @ 15 A |
|
VIT760-M3/4WDIODE SCHOTTKY 7.5A 60V TO-262AA Vishay General Semiconductor - Diodes Division |
2,673 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 700 µA @ 60 V | 60 V | 7.5A | -55°C ~ 150°C | 800 mV @ 7.5 A | |
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|
VS-2EYH01HM3/IFRED PT RECTIFIER SLIMSMAW Vishay General Semiconductor - Diodes Division |
3,163 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 28 ns | 2 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A |
|
|
VS-2EYH02HM3/IFRED PT RECTIFIER SLIMSMAW Vishay General Semiconductor - Diodes Division |
2,121 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 28 ns | 2 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A |
|
1N4947GP-E3/73DIODE GEN PURP 800V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,887 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 250 ns | 1 µA @ 800 V | 800 V | 1A | -65°C ~ 175°C | 1.3 V @ 1 A |
|
|
SSB43LHE3_A/IDIODE SCHOTTKY 30V 4A DO214AA Vishay General Semiconductor - Diodes Division |
2,250 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 30 V | 30 V | 4A | -65°C ~ 150°C | 490 mV @ 4 A |
|
|
EGP10G-E3/73DIODE GEN PURP 400V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,483 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 15pF @ 4V, 1MHz | 50 ns | 5 µA @ 400 V | 400 V | 1A | -65°C ~ 150°C | 1.25 V @ 1 A |
|
1N5059TAPDIODE AVALANCHE 200V 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,890 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 40pF @ 0V, 1MHz | 4 µs | 1 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 1.15 V @ 2.5 A | |
|
VFT1080S-E3/4WDIODE SCHOTTKY 10A 80V ITO-220AB Vishay General Semiconductor - Diodes Division |
3,179 | - |
RFQ |
Технические |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 600 µA @ 80 V | 80 V | 10A | -55°C ~ 150°C | 810 mV @ 10 A |
|
VS-STPS1045BTRL-M3DIODE SCHOTTKY 45V 10A DPAK Vishay General Semiconductor - Diodes Division |
2,228 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 760pF @ 5V, 1MHz | - | 200 µA @ 45 V | 45 V | 10A | -40°C ~ 175°C | 630 mV @ 10 A | |
|
|
1N5060TAPDIODE AVALANCHE 400V 2A SOD57 Vishay General Semiconductor - Diodes Division |
3,316 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | 40pF @ 0V, 1MHz | 4 µs | 1 µA @ 400 V | 400 V | 2A | -55°C ~ 175°C | 1.15 V @ 2.5 A | |
|
|
V15P45-M3/87ADIODE SCHOTTKY 15A 45V TO-277A Vishay General Semiconductor - Diodes Division |
3,454 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.5 mA @ 45 V | 45 V | 4.8A (DC) | -40°C ~ 150°C | 580 mV @ 15 A |
|
|
VS-STPS1045BTR-M3DIODE SCHOTTKY 45V 10A DPAK Vishay General Semiconductor - Diodes Division |
2,391 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 760pF @ 5V, 1MHz | - | 200 µA @ 45 V | 45 V | 10A | -40°C ~ 175°C | 630 mV @ 10 A | |
|
|
V15P45S-M3/87ADIODE SCHOTTKY 15A 45V TO-277A Vishay General Semiconductor - Diodes Division |
3,378 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 1.5 mA @ 45 V | 45 V | 4.8A (DC) | -40°C ~ 150°C | 400 mV @ 5 A |
|
|
VS-STPS1045BTRR-M3DIODE SCHOTTKY 45V 10A DPAK Vishay General Semiconductor - Diodes Division |
3,452 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 760pF @ 5V, 1MHz | - | 200 µA @ 45 V | 45 V | 10A | -40°C ~ 175°C | 630 mV @ 10 A | |
|
|
VS-10WQ045FNTRL-M3DIODE SCHOTTKY 10A 45V DPAK Vishay General Semiconductor - Diodes Division |
3,032 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 760pF @ 5V, 1MHz | - | 1 mA @ 45 V | 45 V | 10A | -40°C ~ 175°C | 630 mV @ 10 A | |
|
|
VS-STPS1045B-M3DIODE SCHOTTKY 45V 10A DPAK Vishay General Semiconductor - Diodes Division |
3,524 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 760pF @ 5V, 1MHz | - | 200 µA @ 45 V | 45 V | 10A | -40°C ~ 175°C | 630 mV @ 10 A | |
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BYM13-50HE3/97DIODE SCHOTTKY 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,051 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 500 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 700 mV @ 1 A | |
|
|
VS-10WQ045FNTR-M3DIODE SCHOTTKY 10A 45V DPAK Vishay General Semiconductor - Diodes Division |
2,238 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 760pF @ 5V, 1MHz | - | 1 mA @ 45 V | 45 V | 10A | -40°C ~ 175°C | 630 mV @ 10 A |
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