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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-E5TX3006THN330A, 600V, "X" SERIES FRED PT IN Vishay General Semiconductor - Diodes Division |
2,727 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 41 ns | 20 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 2.1 V @ 30 A |
|
VSSC520S-M3/57TDIODE SCHOTTKY 5A 200V DO-214AB Vishay General Semiconductor - Diodes Division |
2,032 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 280pF @ 4V, 1MHz | - | 200 µA @ 200 V | 200 V | 5A (DC) | -40°C ~ 150°C | 1.7 V @ 5 A |
|
|
SSC54HE3_A/IDIODE SCHOTTKY 40V 5A DO214AB Vishay General Semiconductor - Diodes Division |
3,809 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 5A | -65°C ~ 150°C | 490 mV @ 5 A |
|
|
SS32-E3/57TDIODE SCHOTTKY 20V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,070 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 20 V | 20 V | 3A | -55°C ~ 125°C | 500 mV @ 3 A | |
|
VS-APU6006LHN3FREDS - TO-247 Vishay General Semiconductor - Diodes Division |
3,505 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 110 ns | 30 µA @ 600 V | 600 V | 60A | -55°C ~ 175°C | 1.5 V @ 60 A | |
|
VS-ETH1506STRLHM3DIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
3,513 | - |
RFQ |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 15 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.45 V @ 15 A | |
|
|
VS-ETH1506STRRHM3DIODE GEN PURP 600V 15A TO263AB Vishay General Semiconductor - Diodes Division |
2,618 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 15 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 2.45 V @ 15 A |
|
|
VS-35APF12L-M3RECTIFIER DIODE 35A 1200V TO-247 Vishay General Semiconductor - Diodes Division |
2,568 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 450 ns | 100 µA @ 1200 V | 1200 V | 35A | -40°C ~ 150°C | 1.47 V @ 35 A | |
|
|
VS-35EPF12L-M3RECTIFIER DIODE 35A 1200V TO-247 Vishay General Semiconductor - Diodes Division |
3,473 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 450 ns | 100 µA @ 1200 V | 1200 V | 35A | -40°C ~ 150°C | 1.47 V @ 35 A | |
|
SL22-E3/52TDIODE SCHOTTKY 20V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,250 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 20 V | 20 V | 2A | -55°C ~ 125°C | 440 mV @ 2 A | |
|
|
SL23-E3/52TDIODE SCHOTTKY 30V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,926 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 30 V | 30 V | 2A | -55°C ~ 125°C | 440 mV @ 2 A | |
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V2PM15LHM3/HSCHOTTKY RECTIFIER 2A 150V SMP Vishay General Semiconductor - Diodes Division |
2,630 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 110pF @ 4V, 1MHz | - | 100 µA @ 150 V | 150 V | 1.7A (DC) | -40°C ~ 175°C | 760 mV @ 1 A |
|
BAT54W-HE3-18DIODE SCHOTTKY 30V 200MA SOD123 Vishay General Semiconductor - Diodes Division |
3,073 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 800 mV @ 100 mA |
|
|
BAT54W-HE3-08DIODE SCHOTTKY 30V 200MA SOD123 Vishay General Semiconductor - Diodes Division |
3,426 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Active | Surface Mount | 10pF @ 1V, 1MHz | 5 ns | 2 µA @ 25 V | 30 V | 200mA (DC) | 125°C (Max) | 800 mV @ 100 mA |
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VS-20ETF08STRL-M3DIODE GEN PURP 800V 20A TO263AB Vishay General Semiconductor - Diodes Division |
2,224 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 400 ns | 100 µA @ 800 V | 800 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | |
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VS-20ETF08STRR-M3DIODE GEN PURP 800V 20A TO263AB Vishay General Semiconductor - Diodes Division |
3,329 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 400 ns | 100 µA @ 800 V | 800 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | |
|
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VS-20ETF12STRR-M3DIODE GEN PURP 1.2KV 20A TO263AB Vishay General Semiconductor - Diodes Division |
2,148 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 400 ns | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | |
|
UG1D-E3/54DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
2,940 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 5 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 950 mV @ 1 A | |
|
BYG10D-E3/TR3DIODE AVALANCHE 200V 1.5A Vishay General Semiconductor - Diodes Division |
2,385 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A | |
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BYG10M-E3/TR3DIODE AVALANCHE 1KV 1.5A Vishay General Semiconductor - Diodes Division |
2,849 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | - | 4 µs | 1 µA @ 1000 V | 1000 V | 1.5A | -55°C ~ 150°C | 1.15 V @ 1.5 A |
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