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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GF1M-E3/67ADIODE GEN PURP 1KV 1A DO214BA Vishay General Semiconductor - Diodes Division |
3,213 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 5 µA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.2 V @ 1 A |
|
RS3K-E3/9ATDIODE GEN PURP 800V 3A DO214AB Vishay General Semiconductor - Diodes Division |
2,594 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 34pF @ 4V, 1MHz | 500 ns | 10 µA @ 800 V | 800 V | 3A | -55°C ~ 150°C | 1.3 V @ 2.5 A | |
|
SB540-E3/73DIODE SCHOTTKY 40V 5A DO201AD Vishay General Semiconductor - Diodes Division |
3,172 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 5A | -65°C ~ 150°C | 480 mV @ 5 A | |
|
|
SSC54-E3/9ATDIODE SCHOTTKY 40V 5A DO214AB Vishay General Semiconductor - Diodes Division |
3,322 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 5A | -65°C ~ 150°C | 490 mV @ 5 A | |
|
|
UF5404-E3/73DIODE GEN PURP 400V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,111 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 45pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
SS2H10-E3/52TDIODE SCHOTTKY 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,888 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 10 µA @ 100 V | 100 V | 2A | -65°C ~ 175°C | 790 mV @ 2 A | |
|
|
SS2H10HE3_A/HDIODE SCHOTTKY 100V 2A DO214AA Vishay General Semiconductor - Diodes Division |
3,000 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 10 µA @ 100 V | 100 V | 2A | -65°C ~ 175°C | 790 mV @ 2 A |
|
VS-72HFR120DIODE GEN PURP 1.2KV 70A DO203AB Vishay General Semiconductor - Diodes Division |
3,370 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 1200 V | 70A | -65°C ~ 180°C | 1.35 V @ 220 A | |
|
|
VS-EPH3007L-N3RECTIFIER HYPERFAST 30A TO-247AD Vishay General Semiconductor - Diodes Division |
3,360 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 37 ns | 30 µA @ 650 V | 650 V | 30A | -55°C ~ 175°C | 2.1 V @ 30 A | |
|
|
VS-EPX3007L-N3RECTIFIER HYPERFAST 30A TO-247AD Vishay General Semiconductor - Diodes Division |
3,094 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 30 µA @ 650 V | 650 V | 30A | -55°C ~ 175°C | 2.5 V @ 30 A | |
|
|
VS-88HF20DIODE GEN PURP 200V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,956 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | - | 200 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
|
VS-88HFR20DIODE GEN PURP 200V 85A DO203AB Vishay General Semiconductor - Diodes Division |
2,209 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | - | 200 V | 85A | -65°C ~ 180°C | 1.2 V @ 267 A | |
|
VS-APU3006HN3DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division |
2,352 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 45 ns | 30 µA @ 600 V | 600 V | 30A | -40°C ~ 150°C | 2 V @ 30 A |
|
VS-20ETF10STRL-M3DIODE GEN PURP 1KV 20A TO263AB Vishay General Semiconductor - Diodes Division |
3,633 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 400 ns | 100 µA @ 1000 V | 1000 V | 20A | -40°C ~ 150°C | 1.31 V @ 20 A | |
|
|
VS-HFA16TB120SHM3DIODE GEN PURP 1.2KV 16A TO263AB Vishay General Semiconductor - Diodes Division |
3,494 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 90 ns | 20 µA @ 1200 V | 1200 V | 16A | -55°C ~ 150°C | 3 V @ 16 A |
|
BYW54-TRDIODE AVALANCHE 600V 2A SOD57 Vishay General Semiconductor - Diodes Division |
2,955 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 1000 V | 600 V | 2A | -55°C ~ 175°C | 1 V @ 1 A | |
|
SS3P6L-M3/86ADIODE SCHOTTKY 60V 3A TO277A Vishay General Semiconductor - Diodes Division |
2,806 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 200pF @ 4V, 1MHz | - | 150 µA @ 60 V | 60 V | 3A | -55°C ~ 150°C | 600 mV @ 3 A |
|
VS-E5TX3006-M330A, 600V, "X" SERIES FRED PT IN Vishay General Semiconductor - Diodes Division |
3,026 | - |
RFQ |
Технические |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 41 ns | 20 µA @ 600 V | 600 V | 30A | -55°C ~ 175°C | 2.1 V @ 30 A |
|
|
B340LB-E3/52TDIODE SCHOTTKY 40V 3A DO214AA Vishay General Semiconductor - Diodes Division |
2,713 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 400 µA @ 40 V | 40 V | 3A | -65°C ~ 150°C | 450 mV @ 3 A | |
|
VS-E5TX1512-M315A, 1200V, "X" SERIES FRED PT I Vishay General Semiconductor - Diodes Division |
2,680 | - |
RFQ |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 44 ns | 50 µA @ 1200 V | 1200 V | 15A | -55°C ~ 175°C | 3.3 V @ 15 A |
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