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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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UG5HT-E3/45DIODE GEN PURP 500V 5A TO220AC Vishay General Semiconductor - Diodes Division |
3,613 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 30 µA @ 500 V | 500 V | 5A | -55°C ~ 150°C | 1.75 V @ 5 A | |
|
BYV29B-400-E3/81DIODE GEN PURP 400V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,688 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 400 V | 400 V | 8A | -40°C ~ 150°C | 1.25 V @ 8 A | |
|
VF30100S-M3/4WDIODE SCHOTTKY 30A 100V ITO220AB Vishay General Semiconductor - Diodes Division |
2,971 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 1 mA @ 100 V | 100 V | 30A | -40°C ~ 150°C | 910 mV @ 30 A | ||
|
|
UGB8FT-E3/81DIODE GEN PURP 300V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,981 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 300 V | 300 V | 8A | -40°C ~ 150°C | 1.25 V @ 8 A | |
|
|
VS-MURB1520TRL-M3DIODE GEN PURP 200V 15A D2PAK Vishay General Semiconductor - Diodes Division |
2,509 | - |
RFQ |
Технические |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 10 µA @ 200 V | 200 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
|
|
UGB8GT-E3/81DIODE GEN PURP 400V 8A TO263AB Vishay General Semiconductor - Diodes Division |
3,206 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 400 V | 400 V | 8A | -40°C ~ 150°C | 1.25 V @ 8 A | |
|
UF5403-E3/73DIODE GEN PURP 300V 3A DO201AD Vishay General Semiconductor - Diodes Division |
2,504 | - |
RFQ |
Технические |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 45pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
VS-MURB1520TRR-M3DIODE GEN PURP 200V 15A D2PAK Vishay General Semiconductor - Diodes Division |
2,346 | - |
RFQ |
Технические |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 10 µA @ 200 V | 200 V | 15A | -65°C ~ 175°C | 1.05 V @ 15 A |
|
BYV28-200-RAS15-10DIODE AVALANCHE 200V 3.5A SOD64 Vishay General Semiconductor - Diodes Division |
3,515 | - |
RFQ |
Технические |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 30 ns | 1 µA @ 200 V | 200 V | 3.5A | -55°C ~ 175°C | 1.1 V @ 5 A | |
|
GI751-E3/73DIODE GEN PURP 100V 6A P600 Vishay General Semiconductor - Diodes Division |
3,840 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 100 V | 100 V | 6A | -50°C ~ 150°C | 900 mV @ 6 A | |
|
VS-8ETU04HN3DIODE GEN PURP 400V 8A TO220AC Vishay General Semiconductor - Diodes Division |
3,551 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 43 ns | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 175°C | 1.3 V @ 8 A |
|
|
GI756-E3/73DIODE GEN PURP 600V 6A P600 Vishay General Semiconductor - Diodes Division |
3,362 | - |
RFQ |
Технические |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 150pF @ 4V, 1MHz | 2.5 µs | 5 µA @ 600 V | 600 V | 6A | -50°C ~ 150°C | 900 mV @ 6 A | |
|
|
VBT2045BP-M3/8WDIODE SCHOTTKY 20A 45V TO-263AB Vishay General Semiconductor - Diodes Division |
2,356 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 2 mA @ 45 V | 45 V | 20A (DC) | -40°C ~ 150°C | 660 mV @ 20 A | |
|
|
VF20150S-E3/4WDIODE SCHOTTKY 150V 20A ITO220AB Vishay General Semiconductor - Diodes Division |
2,491 | - |
RFQ |
Технические |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 250 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.43 V @ 20 A |
|
VS-6ESH06-M3/87ADIODE GEN PURP 600V 6A TO277A Vishay General Semiconductor - Diodes Division |
3,389 | - |
RFQ |
Технические |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 5 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 1.8 V @ 6 A |
|
|
VBT2045BP-M3/4WDIODE SCHOTTKY 20A 45V TO-263AB Vishay General Semiconductor - Diodes Division |
2,265 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 2 mA @ 45 V | 45 V | 20A (DC) | -40°C ~ 150°C | 660 mV @ 20 A | |
|
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UGB8JT-E3/45DIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division |
2,609 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 30 µA @ 600 V | 600 V | 8A | -55°C ~ 150°C | 1.75 V @ 8 A | |
|
|
VS-6ESU06-M3/87ADIODE GEN PURP 600V 6A TO277A Vishay General Semiconductor - Diodes Division |
2,249 | - |
RFQ |
Технические |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 58 ns | 5 µA @ 600 V | 600 V | 6A | -65°C ~ 175°C | 1.3 V @ 6 A |
|
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VS-MURB820TRL-M3DIODE GEN PURP 200V 8A D2PAK Vishay General Semiconductor - Diodes Division |
3,419 | - |
RFQ |
Технические |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 200 V | 200 V | 8A | -65°C ~ 175°C | 975 mV @ 8 A |
|
|
MBRB1045HE3_B/PDIODE SCHOTTKY 45V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,486 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 45 V | 45 V | 10A | -65°C ~ 150°C | 840 mV @ 20 A |
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