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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-6TQ045STRL-M3DIODE SCHOTTKY 45V 6A TO263AB Vishay General Semiconductor - Diodes Division |
2,384 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 800 µA @ 45 V | 45 V | 6A | -55°C ~ 175°C | 600 mV @ 6 A | |
|
VF30120S-M3/4WDIODE SCHOTTKY 30A 120V ITO220AB Vishay General Semiconductor - Diodes Division |
3,461 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 120 V | 120 V | 30A | -40°C ~ 150°C | 1.1 V @ 30 A | ||
|
V8PM12-M3/87ADIODE SCHOTTKY 120V 3.6A TO277A Vishay General Semiconductor - Diodes Division |
2,154 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 120 V | 120 V | 3.6A (DC) | -40°C ~ 150°C | 620 mV @ 4 A | |
|
|
VS-MURB820TRR-M3DIODE GEN PURP 200V 8A D2PAK Vishay General Semiconductor - Diodes Division |
2,388 | - |
RFQ |
Технические |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 200 V | 200 V | 8A | -65°C ~ 175°C | 975 mV @ 8 A |
|
|
MBRB1045HE3_B/IDIODE SCHOTTKY 45V 10A TO263AB Vishay General Semiconductor - Diodes Division |
2,223 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 100 µA @ 45 V | 45 V | 10A | -65°C ~ 150°C | 840 mV @ 20 A |
|
|
VS-6TQ045STRR-M3DIODE SCHOTTKY 45V 6A TO263AB Vishay General Semiconductor - Diodes Division |
2,684 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 800 µA @ 45 V | 45 V | 6A | -55°C ~ 175°C | 600 mV @ 6 A | |
|
VS-8ETU04-1HM3DIODE GEN PURP 400V 8A TO262AA Vishay General Semiconductor - Diodes Division |
2,748 | - |
RFQ |
Технические |
Tape & Reel (TR) | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 43 ns | 10 µA @ 400 V | 400 V | 8A | -55°C ~ 175°C | 1.3 V @ 8 A |
|
UF5403-E3/54DIODE GEN PURP 300V 3A DO201AD Vishay General Semiconductor - Diodes Division |
3,690 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 45pF @ 4V, 1MHz | 50 ns | 10 µA @ 300 V | 300 V | 3A | -55°C ~ 150°C | 1 V @ 3 A | |
|
|
VS-8ETH06-1-M3DIODE GEN PURP 600V 8A TO262 Vishay General Semiconductor - Diodes Division |
2,204 | - |
RFQ |
Технические |
Tube | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 25 ns | 50 µA @ 600 V | 600 V | 8A | -65°C ~ 175°C | 2.4 V @ 8 A |
|
VS-MURB820-1HM3DIODE GEN PURP 200V 8A TO-262 Vishay General Semiconductor - Diodes Division |
3,148 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 5 µA @ 200 V | 200 V | 8A | -55°C ~ 175°C | 975 mV @ 8 A |
|
VS-18TQ035-M3DIODE SCHOTTKY 18A 35V TO-220AC Vishay General Semiconductor - Diodes Division |
3,883 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 1400pF @ 5V, 1MHz | - | 2.5 mA @ 35 V | 35 V | 18A | -55°C ~ 175°C | 720 mV @ 36 A | |
|
VS-8ETH06SHM3DIODE GEN PURP 600V 8A TO263 Vishay General Semiconductor - Diodes Division |
3,974 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 22 ns | 50 µA @ 600 V | 600 V | 8A | -55°C ~ 175°C | 2.4 V @ 8 A |
|
|
V8PM12-M3/86ADIODE SCHOTTKY 8A 120V TO-277A Vishay General Semiconductor - Diodes Division |
2,217 | - |
RFQ |
Технические |
Tape & Reel (TR) | eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 300 µA @ 120 V | 120 V | 8A | -40°C ~ 150°C | 840 mV @ 8 A |
|
|
VS-MURB820HM3DIODE GEN PURP 200V 8A TO263 Vishay General Semiconductor - Diodes Division |
3,165 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 5 µA @ 200 V | 200 V | 8A | -55°C ~ 175°C | 975 mV @ 8 A |
|
|
VS-18TQ040-M3DIODE SCHOTTKY 40V 18A TO220AC Vishay General Semiconductor - Diodes Division |
3,174 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 1400pF @ 5V, 1MHz | - | 2.5 mA @ 40 V | 40 V | 18A | -55°C ~ 175°C | 720 mV @ 36 A | |
|
|
VS-8ETU12HN3DIODE GEN PURP 1.2KV 8A TO220AC Vishay General Semiconductor - Diodes Division |
2,373 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 144 ns | 55 µA @ 1200 V | 1200 V | 8A | -55°C ~ 175°C | 2.55 V @ 8 A |
|
|
VS-10TQ045HN3SCHOTTKY - TO-220 Vishay General Semiconductor - Diodes Division |
3,989 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 900pF @ 5V, 1MHz | - | 2 mA @ 45 V | 45 V | 10A | -55°C ~ 175°C | 570 mV @ 10 A | |
|
|
VS-ETU1506-1HM3DIODE GEN PURP 600V 15A TO263 Vishay General Semiconductor - Diodes Division |
2,131 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 40 ns | 15 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.9 V @ 15 A |
|
|
VI20150S-M3/4WDIODE SCHOTTKY 20A 150V TO-262AA Vishay General Semiconductor - Diodes Division |
3,041 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 250 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.43 V @ 20 A | |
|
|
VS-ETU1506SHM3DIODE GEN PURP 600V 15A TO-262 Vishay General Semiconductor - Diodes Division |
2,594 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q101, FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 15 µA @ 600 V | 600 V | 15A | -65°C ~ 175°C | 1.9 V @ 15 A |
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