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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
1N3881DIODE GEN PURP 200V 6A DO4 GeneSiC Semiconductor |
634 | - |
RFQ |
Технические |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | 200 ns | 15 µA @ 50 V | 200 V | 6A | -65°C ~ 150°C | 1.4 V @ 6 A | |
|
1N1190ADIODE GEN PURP 600V 40A DO5 GeneSiC Semiconductor |
236 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 600 V | 40A | -65°C ~ 190°C | 1.1 V @ 40 A | |
|
1N3768RDIODE GEN PURP REV 1KV 35A DO5 GeneSiC Semiconductor |
125 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 1000 V | 35A | -65°C ~ 190°C | 1.2 V @ 35 A | |
|
S85JDIODE GEN PURP 600V 85A DO5 GeneSiC Semiconductor |
160 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 600 V | 85A | -65°C ~ 180°C | 1.1 V @ 85 A | |
|
S85VRDIODE GEN PURP REV 1.4KV 85A DO5 GeneSiC Semiconductor |
396 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 1400 V | 85A | -65°C ~ 150°C | 1.1 V @ 85 A | |
|
MBR3560RDIODE SCHOTTKY REV 60V DO4 GeneSiC Semiconductor |
101 | - |
RFQ |
Технические |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 1.5 mA @ 20 V | 60 V | 35A | -55°C ~ 150°C | 750 mV @ 35 A | |
|
GD10MPS12A1200V 10A TO-220-2 SIC SCHOTTKY GeneSiC Semiconductor |
3,750 | - |
RFQ |
Технические |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 367pF @ 1V, 1MHz | 0 ns | 5 µA @ 1200 V | 1200 V | 25A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A |
|
GD05MPS17H1700V 5A TO-247-2 SIC SCHOTTKY M GeneSiC Semiconductor |
3,180 | - |
RFQ |
Технические |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 361pF @ 1V, 1MHz | 0 ns | 5 µA @ 1700 V | 1700 V | 16A (DC) | 175°C | 1.8 V @ 5 A |
|
GB05MPS17-2631700V 5A TO-263-7 SIC SCHOTTKY M GeneSiC Semiconductor |
1,697 | - |
RFQ |
Технические |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 470pF @ 1V, 1MHz | - | - | 1700 V | 18A (DC) | -55°C ~ 175°C | - |
|
1N1190ARDIODE GEN PURP REV 600V 40A DO5 GeneSiC Semiconductor |
195 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 600 V | 40A | -65°C ~ 190°C | 1.1 V @ 40 A | |
|
S85JRDIODE GEN PURP REV 600V 85A DO5 GeneSiC Semiconductor |
365 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 100 V | 600 V | 85A | -65°C ~ 180°C | 1.1 V @ 85 A | |
|
GD25MPS17H1700V 25A TO-247-2 SIC SCHOTTKY GeneSiC Semiconductor |
378 | - |
RFQ |
Технические |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1.083nF @ 1V, 1MHz | 0 ns | 5 µA @ 1700 V | 1700 V | 60A (DC) | -55°C ~ 175°C | 1.8 V @ 25 A |
|
MBRH20035RLDIODE SCHOTTKY 35V 200A D-67 GeneSiC Semiconductor |
2,656 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky, Reverse Polarity | Obsolete | Chassis Mount | - | - | 3 mA @ 200 V | 35 V | 200A | - | 600 mV @ 200 A | ||
|
|
MBRH20040LDIODE SCHOTTKY 40V 200A D-67 GeneSiC Semiconductor |
3,204 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Chassis Mount | - | - | 5 mA @ 40 V | 40 V | 200A | - | 600 mV @ 200 A | ||
|
|
MBRH20040RLDIODE SCHOTTKY 40V 200A D-67 GeneSiC Semiconductor |
2,978 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky, Reverse Polarity | Obsolete | Chassis Mount | - | - | 5 mA @ 40 V | 40 V | 200A | - | 600 mV @ 200 A | ||
|
|
MBRH20045LDIODE SCHOTTKY 45V 200A D-67 GeneSiC Semiconductor |
3,749 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Chassis Mount | - | - | 5 mA @ 45 V | 45 V | 200A | -55°C ~ 150°C | 600 mV @ 200 A | ||
|
|
MBRH20045RLDIODE SCHOTTKY 45V 200A D-67 GeneSiC Semiconductor |
2,422 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky, Reverse Polarity | Obsolete | Chassis Mount | - | - | 5 mA @ 45 V | 45 V | 200A | -55°C ~ 150°C | 600 mV @ 200 A | ||
|
GE04MPS06A650V 4A TO-220-2 SIC SCHOTTKY MP GeneSiC Semiconductor |
7,985 | - |
RFQ |
Технические |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 186pF @ 1V, 1MHz | 0 ns | 5 µA @ 650 V | 650 V | 9A (DC) | -55°C ~ 175°C | 1.35 V @ 4 A |
|
GE06MPS06A650V 6A TO-220-2 SIC SCHOTTKY MP GeneSiC Semiconductor |
3,420 | - |
RFQ |
Технические |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 279pF @ 1V, 1MHz | - | - | 650 V | 12A (DC) | -55°C ~ 175°C | - |
|
|
GD10MPS12H1200V 10A TO-247-2 SIC SCHOTTKY GeneSiC Semiconductor |
3,046 | - |
RFQ |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | - | 0 ns | - | 1200 V | 10A (DC) | 175°C | - |
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