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Диоды - выпрямители - одиночные
| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GD30MPS06H650V 30A TO-247-2 SIC SCHOTTKY M GeneSiC Semiconductor |
1,110 | - |
RFQ |
Технические |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 735pF @ 1V, 1MHz | - | - | 650 V | 49A (DC) | -55°C ~ 175°C | - |
|
|
GD30MPS06A650V 30A TO-220-2 SIC SCHOTTKY M GeneSiC Semiconductor |
1,996 | - |
RFQ |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | - | 0 ns | - | 650 V | 30A (DC) | 175°C | - | |
|
|
GE08MPS06A650V 8A TO-220-2 SIC SCHOTTKY MP GeneSiC Semiconductor |
2,000 | - |
RFQ |
Технические |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 373pF @ 1V, 1MHz | - | - | 650 V | 15A (DC) | -55°C ~ 175°C | - |
|
GD30MPS06J650V 30A TO-263-7 SIC SCHOTTKY M GeneSiC Semiconductor |
962 | - |
RFQ |
Технические |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 735pF @ 1V, 1MHz | - | - | 650 V | 51A (DC) | -55°C ~ 175°C | - |
|
GE10MPS06A650V 10A TO-220-2 SIC SCHOTTKY M GeneSiC Semiconductor |
885 | - |
RFQ |
Технические |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 466pF @ 1V, 1MHz | - | - | 650 V | 19A (DC) | -55°C ~ 175°C | - |
|
GB02SHT03-46DIODE SCHOTTKY 300V 4A GeneSiC Semiconductor |
2,544 | - |
RFQ |
Технические |
Bulk | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 76pF @ 1V, 1MHz | 0 ns | 5 µA @ 300 V | 300 V | 4A (DC) | -55°C ~ 225°C | 1.6 V @ 1 A | |
|
S300YDIODE GEN PURP 1.6KV 300A DO9 GeneSiC Semiconductor |
2,606 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 10 µA @ 1600 V | 1600 V | 300A | -60°C ~ 180°C | 1.2 V @ 300 A | |
|
GC08MPS12-252SIC DIODE 1200V 8A TO-252-2 GeneSiC Semiconductor |
2,366 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 545pF @ 1V, 1MHz | 0 ns | 7 µA @ 1200 V | 1200 V | 40A (DC) | -55°C ~ 175°C | 1.8 V @ 8 A |
|
GD10MPS12E1200V 10A TO-252-2 SIC SCHOTTKY GeneSiC Semiconductor |
672 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 367pF @ 1V, 1MHz | 0 ns | 5 µA @ 1200 V | 1200 V | 29A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A |
|
GC10MPS12-220SIC DIODE 1200V 10A TO-220-2 GeneSiC Semiconductor |
359 | - |
RFQ |
Технические |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 660pF @ 1V, 1MHz | 0 ns | 10 µA @ 1200 V | 1200 V | 54A (DC) | -55°C ~ 175°C | 1.8 V @ 10 A |
|
|
GC15MPS12-220SIC DIODE 1200V 15A TO-220-2 GeneSiC Semiconductor |
257 | - |
RFQ |
Технические |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1089pF @ 1V, 1MHz | 0 ns | 14 µA @ 1200 V | 1200 V | 82A (DC) | -55°C ~ 175°C | 1.8 V @ 15 A |
|
GC15MPS12-247SIC DIODE 1200V 15A TO-247-2 GeneSiC Semiconductor |
253 | - |
RFQ |
Технические |
Tube | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1089pF @ 1V, 1MHz | 0 ns | 14 µA @ 1200 V | 1200 V | 75A (DC) | -55°C ~ 175°C | 1.8 V @ 15 A |
|
FR30GR02DIODE GEN PURP REV 400V 30A DO5 GeneSiC Semiconductor |
246 | - |
RFQ |
Технические |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | 200 ns | 25 µA @ 50 V | 400 V | 30A | -40°C ~ 125°C | 1 V @ 30 A | |
|
|
GE08MPS06E650V 8A TO-252-2 SIC SCHOTTKY MP GeneSiC Semiconductor |
2,427 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 373pF @ 1V, 1MHz | - | - | 650 V | 21A (DC) | -55°C ~ 175°C | - |
|
|
GE10MPS06E650V 10A TO-252-2 SIC SCHOTTKY M GeneSiC Semiconductor |
2,490 | - |
RFQ |
Технические |
Tape & Reel (TR),Cut Tape (CT) | SiC Schottky MPS™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 466pF @ 1V, 1MHz | - | - | 650 V | 26A (DC) | -55°C ~ 175°C | - |
|
|
GB02SLT06-214SIC SCHOTTKY DIODE 650V 2A GeneSiC Semiconductor |
2,248 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
GB10SLT12-214SIC SCHOTTKY DIODE 1200V 10A GeneSiC Semiconductor |
2,910 | - |
RFQ |
Cut Tape (CT) | RoHS | - | - | Discontinued at Digi-Key | - | - | - | - | - | - | - | - | ||
|
|
GKN26/04DIODE GEN PURP 400V 25A DO4 GeneSiC Semiconductor |
3,347 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis, Stud Mount | - | - | 4 mA @ 400 V | 400 V | 25A | -40°C ~ 180°C | 1.55 V @ 60 A | |
|
GKN26/08DIODE GEN PURP 800V 25A DO4 GeneSiC Semiconductor |
2,686 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis, Stud Mount | - | - | 4 mA @ 800 V | 800 V | 25A | -40°C ~ 180°C | 1.55 V @ 60 A | |
|
|
GKN26/12DIODE GEN PURP 1.2KV 25A DO4 GeneSiC Semiconductor |
3,053 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Chassis, Stud Mount | - | - | 4 mA @ 1200 V | 1200 V | 25A | -40°C ~ 180°C | 1.55 V @ 60 A |
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