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| Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
D820N22TXPSA1DIODE GEN PURP 2.2KV 820A Infineon Technologies |
3,214 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 40 mA @ 2200 V | 2200 V | 820A | -40°C ~ 180°C | 1.25 V @ 750 A | |
|
IDW40E65D2FKSA1DIODE GEN PURP 650V 80A TO247-3 Infineon Technologies |
1,049 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 40 µA @ 650 V | 650 V | 80A | -40°C ~ 175°C | 2.3 V @ 40 A | |
|
|
IDW100E60FKSA1DIODE GEN PURP 600V 150A TO247-3 Infineon Technologies |
600 | - |
RFQ |
Технические |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 120 ns | 40 µA @ 600 V | 600 V | 150A (DC) | -55°C ~ 175°C | 2 V @ 100 A | |
|
|
D950N22TXPSA1DIODE GEN PURP 2.2KV 950A Infineon Technologies |
3,462 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 40 mA @ 2200 V | 2200 V | 950A | -40°C ~ 180°C | 1.12 V @ 650 A | |
|
ND89N16KHPSA1DIODE GP 1.6KV 89A BG-PB20-1 Infineon Technologies |
3,121 | - |
RFQ |
Технические |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 20 mA @ 1600 V | 1600 V | 89A | -40°C ~ 135°C | - | |
|
|
D820N24TXPSA1DIODE GEN PURP 2.4KV 820A Infineon Technologies |
2,843 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 40 mA @ 2400 V | 2400 V | 820A | -40°C ~ 180°C | 1.25 V @ 750 A | |
|
|
ND104N12KHPSA1DIODE GP 1.2KV 104A BG-PB20-1 Infineon Technologies |
3,716 | - |
RFQ |
Технические |
Tray | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 20 mA @ 1200 V | 1200 V | 104A | -40°C ~ 135°C | - | |
|
D5810N04TVFXPSA1DIODE GEN PURP 400V 5800A Infineon Technologies |
2,922 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 100 mA @ 400 V | 400 V | 5800A | -40°C ~ 180°C | - | |
|
AIDW40S65C5XKSA1DIODE SCHOTTKY 650V 40A TO247 Infineon Technologies |
673 | - |
RFQ |
Технические |
Tube | Automotive, AEC-Q100/101, CoolSiC™ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 1138pF @ 1V, 1MHz | 0 ns | 120 µA @ 650 V | 650 V | 40A (DC) | -40°C ~ 175°C | 1.7 V @ 40 A |
|
|
D5810N06TVFXPSA1DIODE GEN PURP 600V 5800A Infineon Technologies |
3,824 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 100 mA @ 600 V | 600 V | 5800A | -40°C ~ 180°C | - | |
|
|
D740N44TXPSA1DIODE GEN PURP 4.4KV 750A Infineon Technologies |
2,279 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 70 mA @ 4400 V | 4400 V | 750A | -40°C ~ 160°C | 1.45 V @ 700 A | |
|
|
D740N48TXPSA1DIODE GEN PURP 4.8KV 750A Infineon Technologies |
3,776 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 70 mA @ 4800 V | 4800 V | 750A | -40°C ~ 160°C | 1.45 V @ 700 A | |
|
|
D2650N24TVFXPSA1DIODE GEN PURP 2.4KV 2650A Infineon Technologies |
3,556 | - |
RFQ |
Технические |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis Mount | - | - | 200 mA @ 2400 V | 2400 V | 2650A | -40°C ~ 180°C | 1.25 V @ 2500 A | |
|
BAS 16-02V E6327DIODE GEN PURP 80V 200MA SC79-2 Infineon Technologies |
2,485 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Obsolete | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 1 µA @ 75 V | 80 V | 200mA (DC) | 150°C (Max) | 1.25 V @ 150 mA | |
|
BAS 16-02W E6327DIODE GEN PURP 80V 200MA SCD80-2 Infineon Technologies |
3,666 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Obsolete | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 1 µA @ 75 V | 80 V | 200mA (DC) | 150°C (Max) | 1.25 V @ 150 mA | |
|
BAS16WE6433HTMA1DIODE GEN PURP 80V 250MA SOT323 Infineon Technologies |
3,282 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | 2pF @ 0V, 1MHz | 4 ns | 1 µA @ 75 V | 80 V | 250mA (DC) | 150°C (Max) | 1.25 V @ 150 mA | |
|
|
BAS5202VE6127XTDIODE SCHOTTKY 45V 750MA SC79-2 Infineon Technologies |
3,371 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Discontinued at Digi-Key | Surface Mount | 10pF @ 10V, 1MHz | - | 10 µA @ 45 V | 45 V | 750mA (DC) | 150°C (Max) | 600 mV @ 200 mA | |
|
|
BAS 52-02V E6327DIODE SCHOTTKY 45V 750MA SC79-2 Infineon Technologies |
2,513 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 10pF @ 10V, 1MHz | - | 10 µA @ 45 V | 45 V | 750mA (DC) | 150°C (Max) | 600 mV @ 200 mA | |
|
|
BAS 70-02W E6327DIODE SCHOTTKY 70V 70MA SCD80-2 Infineon Technologies |
3,406 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Small Signal =< 200mA (Io), Any Speed | Schottky | Obsolete | Surface Mount | 2pF @ 0V, 1MHz | 100 ps | 100 nA @ 50 V | 70 V | 70mA (DC) | -55°C ~ 125°C | 1 V @ 15 mA | |
|
BAT 60B E6433DIODE SCHOTTKY 10V 3A SOD323-2 Infineon Technologies |
3,262 | - |
RFQ |
Технические |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | 30pF @ 5V, 1MHz | - | 25 µA @ 8 V | 10 V | 3A (DC) | 150°C (Max) | 600 mV @ 1 A |
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